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1. 发明申请

US20060202769A1 Piezoelectric thin film device and method of producing the same 审中-公开
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US20060202769A1
公开(公告)日：2006-09-14
申请号：US10551680
申请日：2004-03-30
申请人： Keigo Nagao , Kosuke Nishimura , Tetsuo Yamada , Osamu Otani , Sakae Matsuzaki
发明人： Keigo Nagao , Kosuke Nishimura , Tetsuo Yamada , Osamu Otani , Sakae Matsuzaki
IPC分类号： H03B5/34
CPC分类号： H03H9/174 , H03H3/02 , H03H9/0523 , H03H9/1014 , H03H9/564 , H03H9/568
摘要： A piezoelectric thin film device (10) comprising a substrate (12) having a vibration space (20), and a piezoelectric lamination structure (14) formed on the upper surface of the substrate, the piezoelectric lamination structure comprising a piezoelectric film (16) and a lower electrode (15) and upper electrode (17) which are formed on opposite surfaces thereof, respectively, the vibration space (20) being so formed as to allow the vibration of a vibrating section (23) constituted by including at least part of the piezoelectric lamination structure (14) and part of an insulating layer (13). The vibrating space (20) is composed of a first via hole (21) formed from the lower surface of the substrate (12) toward the upper surface thereof so as to form an intermediate surface (25) in the substrate, and a second via hole (22) formed from the intermediate surface (23) toward the upper surface of the substrate so as to be positioned inside the first via hole (21) as seen vertically.
摘要翻译：一种压电薄膜器件（10），包括具有振动空间（20）的衬底（12）和形成在所述衬底的上表面上的压电层压结构（14），所述压电层压结构包括压电薄膜（16）以及分别形成在其相对表面上的下电极（15）和上电极（17），所述振动空间（20）形成为允许振动部分（23）的振动，所述振动部分（23）包括至少部分的压电层压结构（14）和绝缘层（13）的一部分。所述振动空间（20）由从所述基板（12）的下表面向其上表面形成的第一通孔（21）构成，以在所述基板上形成中间面（25），所述第二通孔从中间表面（23）形成的孔（22）朝向基板的上表面，以便位于第一通孔（21）的内部。

2. 发明申请

US20130199771A1 HEAT-DISSIPATING SUBSTRATE FOR LED 审中-公开
标题翻译： LED散热基板
公开(公告)号：US20130199771A1
公开(公告)日：2013-08-08
申请号：US13640556
申请日：2011-04-05
申请人： Shigeyasu Yamaguchi , Osamu Nakayama , Keigo Nagao , Takuro Kochiyama , Atsushi Mizutare
发明人： Shigeyasu Yamaguchi , Osamu Nakayama , Keigo Nagao , Takuro Kochiyama , Atsushi Mizutare
IPC分类号： F28F21/08
CPC分类号： F28F21/089 , H01L33/641 , H05K1/0203 , H05K1/189 , H05K3/022 , H05K2201/0154 , H05K2201/0355 , H05K2201/10106
摘要： The present invention relates to a heat-dissipating substrate for LED, comprising a polyimide film, a copper foil or a copper alloy foil which is laminated on one side of the polyimide film, and an aluminum foil or an aluminum alloy foil which is laminated on the other side of the polyimide film, in which the thermal resistance between the surface of the copper foil or the copper alloy foil and the surface of the aluminum foil or the aluminum alloy foil is 1.8° C./W or less.
摘要翻译：本发明涉及一种用于LED的散热基板，其包括层叠在聚酰亚胺膜一侧的聚酰亚胺膜，铜箔或铜合金箔，以及铝箔或铝合金箔，其层压在铜箔或铜合金箔的表面与铝箔或铝合金箔的表面之间的热阻为1.8℃/ W以下的聚酰亚胺膜的另一面。

3. 发明授权

US07482737B2 Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same 有权
标题翻译：氮化铝薄膜，含有其的复合膜和使用其的压电薄膜谐振器
公开(公告)号：US07482737B2
公开(公告)日：2009-01-27
申请号：US11546765
申请日：2006-10-12
申请人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
发明人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
IPC分类号： H03H9/125
CPC分类号： H03H9/585 , H01L41/0477 , H03H3/02 , H03H9/02031 , H03H9/13 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
摘要翻译：压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

4. 发明授权

US07388318B2 Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof 有权
标题翻译：薄膜压电谐振器，薄膜压电器件及其制造方法
公开(公告)号：US07388318B2
公开(公告)日：2008-06-17
申请号：US10518704
申请日：2003-06-20
申请人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
发明人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
IPC分类号： H01L41/08
CPC分类号： H03H9/562 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02157 , H03H9/564 , H03H9/568 , H03H9/585 , H03H9/588
摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.
摘要翻译：一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14）所述基板（12）经由绝缘层（13）。为通孔（22）形成多个薄膜压电谐振器（210,220）。压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。薄膜压电谐振器（210,220）通过下电极（15）电连接。当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。通孔（22）通过深刻型反应离子蚀刻法制造。

5. 发明授权

US07212082B2 Method of manufacturing piezoelectric thin film device and piezoelectric thin film device 有权
标题翻译：制造压电薄膜器件和压电薄膜器件的方法
公开(公告)号：US07212082B2
公开(公告)日：2007-05-01
申请号：US10538137
申请日：2004-12-17
申请人： Keigo Nagao , Tetsuro Kunisawa , Tetsuo Yamada
发明人： Keigo Nagao , Tetsuro Kunisawa , Tetsuo Yamada
IPC分类号： H03H9/15 , H03H3/02 , H03H9/54
CPC分类号： H03H3/04 , H01L41/316 , H03H9/173 , H03H9/174
摘要： Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.
摘要翻译：制造压电薄膜器件的方法包括在衬底（11）的上表面上形成能够被特定化学物质蚀刻的绝缘层（12）的步骤; 在所述绝缘层的部分区域上形成由具有比所述绝缘层更高的蚀刻速率的物质制成的牺牲层（13）的步骤; 在包括所述牺牲层的区域上形成下电极（15）的步骤; 在包括下电极的一部分的区域上形成压电薄膜（16）的步骤; 在包括压电薄膜的一部分的区域上形成上电极（17）的步骤; 形成穿过压电薄膜和下电极的通孔（18）的步骤，以暴露牺牲层的一部分; 以及通过使特定的化学物质通过通孔，通过用相同的特定化学物质蚀刻牺牲层和绝缘层来形成用于振荡的空间（20）的步骤。

6. 发明申请

US20070080611A1 Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same 有权
标题翻译：氮化铝薄膜，含有其的复合膜和使用其的压电薄膜谐振器
公开(公告)号：US20070080611A1
公开(公告)日：2007-04-12
申请号：US11546765
申请日：2006-10-12
申请人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
发明人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
IPC分类号： H01L41/047
CPC分类号： H03H9/585 , H01L41/0477 , H03H3/02 , H03H9/02031 , H03H9/13 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
摘要翻译：压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

7. 发明申请

US20140287218A1 THERMALLY ADHESIVE POLYIMIDE FILM AND METHOD FOR PRODUCING SAME, AND POLYIMIDE METAL LAMINATE PRODUCED USING THERMALLY ADHESIVE POLYIMIDE FILM 审中-公开
标题翻译：热固性聚酰亚胺膜及其制造方法，以及使用热固性聚酰亚胺膜生产的聚酰亚胺金属层压板
公开(公告)号：US20140287218A1
公开(公告)日：2014-09-25
申请号：US14240717
申请日：2012-08-17
申请人： Takuro Kochiyama , Keigo Nagao , Takeshi Uekido , Hideo Arihara
发明人： Takuro Kochiyama , Keigo Nagao , Takeshi Uekido , Hideo Arihara
IPC分类号： B32B15/088 , B32B37/10 , C08J5/18 , B32B7/12 , C08G69/26
CPC分类号： B32B7/12 , B32B15/08 , B32B15/088 , B32B37/10 , B32B2307/748 , B32B2379/08 , B32B2457/08 , C08G69/26 , C08J5/18 , C08J2377/10 , Y10T156/10 , Y10T428/31681
摘要： A single-layered thermally adhesive polyimide film; a method for producing the thermally adhesive polyimide film; and a method for producing a polyimide metal laminate produced using the thermally adhesive polyimide film. The single-layer thermally adhesive polyimide film is produced by polymerizing a tetracarboxylic acid dianhydride component and a diamine component, wherein the tetracarboxylic acid dianhydride component includes 2,3,3′,4′-biphenyltetracarboxylic acid dianhydride and 3,3′,4,4′-biphenyltetracarboxylic acid dianhydride and the diamine component includes an aromatic diamine compound represented by the following formula (I) as a main component wherein X is O, CO, C(CH3)2, CH2, SO2, S, or a direct bond, and in cases of two or more modes of bonding, each is the same or different; and n is an integer of 0 to 4.
摘要翻译：单层热粘合聚酰亚胺膜; 一种制造该热粘合聚酰亚胺膜的方法; 以及使用该热粘合性聚酰亚胺膜制造的聚酰亚胺金属叠层体的制造方法。单层热粘合性聚酰亚胺膜是通过使四羧酸二酐成分和二胺成分聚合而制造的，其中四羧酸二酐组分包括2,3,3'，4'-联苯四羧酸二酐和3,3'，4' 4'-联苯四羧酸二酐和二胺组分包括由下式（I）表示的芳族二胺化合物作为主要成分，其中X是O，CO，C（CH 3）2，CH 2，SO 2，S或直接键并且在两种或更多种结合方式的情况下，各自相同或不同; n为0〜4的整数。

8. 发明授权

US07140084B2 Method of producing thin film bulk acoustic resonator 有权
标题翻译：制造薄膜体声波谐振器的方法
公开(公告)号：US07140084B2
公开(公告)日：2006-11-28
申请号：US10995447
申请日：2004-11-23
申请人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
发明人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
IPC分类号： H04R17/00 , H05K3/10 , B24B1/00
CPC分类号： H03H9/173 , B06B1/0644 , G10K11/04 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/562 , H03H9/564 , H03H9/585 , H03H9/587 , H03H2003/021 , H03H2003/0428 , Y10S977/888 , Y10T29/42 , Y10T29/49155
摘要： A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by etching.
摘要翻译：一种制造具有压电层的薄膜体声波谐振器的方法，连接到压电层的第一表面的第一电极和连接到压电层的第二表面的第二电极，该第二电极位于与压电层相对的一侧所述第一表面包括在基板的表面上形成凹坑的步骤; 用牺牲层填充坑; 抛光牺牲层的表面，使得牺牲层的表面的高度的RMS变化等于25nm或更小; 在所述牺牲层的表面的部分区域和所述衬底的表面的部分区域上形成所述第一电极; 在第一电极上形成压电层，使得压电层的第二表面的高度的RMS变化等于压电层的厚度的5％以下; 在压电层上形成第二电极; 并通过蚀刻从凹坑的内部去除牺牲层。

9. 发明申请

US20050248238A1 THIN FILM PIEZOELECTRIC RESONATOR, THIN FILM PIEZOELECTRIC DEVICE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜压电谐振器，薄膜压电器件及其制造方法
公开(公告)号：US20050248238A1
公开(公告)日：2005-11-10
申请号：US10518704
申请日：2003-06-20
申请人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
发明人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
IPC分类号： H01L41/22 , H01L41/29 , H03H3/02 , H03H9/02 , H03H9/56 , H03H9/58 , H01L41/047
CPC分类号： H03H9/562 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02157 , H03H9/564 , H03H9/568 , H03H9/585 , H03H9/588
摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.
摘要翻译：一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14）所述基板（12）经由绝缘层（13）。为通孔（22）形成多个薄膜压电谐振器（210,220）。压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。薄膜压电谐振器（210,220）通过下电极（15）电连接。当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。通孔（22）通过深刻型反应离子蚀刻法制造。

10. 发明授权

US06936837B2 Film bulk acoustic resonator 有权
标题翻译：薄膜体声共振器
公开(公告)号：US06936837B2
公开(公告)日：2005-08-30
申请号：US10477308
申请日：2002-05-10
申请人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto , Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama
发明人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto , Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama
IPC分类号： H03H9/02 , H03H9/56 , H03H9/58 , H01L47/00
CPC分类号： H03H9/174 , H03H9/02094 , H03H9/562 , H03H9/564 , H03H9/585 , H03H9/588 , Y10S438/90
摘要： A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal. Thus, the thin film bulk acoustic resonator has a high performance such as a large electromechanical coupling coefficient, an excellent acoustic quality factor (Q) and an excellent frequency-temperature characteristic.
摘要翻译：薄膜体声波谐振器包括硅单晶的衬底（12），形成在衬底（12）上并由主要包含氧化硅的电介质膜构成的基膜（13）和压电堆叠结构（14）形成在基膜（13）上。由所述基膜（13）的一部分和所述压电堆叠结构（14）的一部分构成的振动部（21）。压电堆叠结构（14）包括下部电极（15），压电膜（16）和从下方依次形成的上部电极（17）。基板（12）在对应于振动部分（21）的区域中具有通孔（20）。通孔形成用于允许振动部分（21）振动的空间。压电膜（16）是含有0.2〜3.0原子％的碱土金属和/或稀土金属的氮化铝薄膜。因此，薄膜体声波谐振器具有高的机电耦合系数，良好的声学质量因子（Q）和优异的频率 - 温度特性等性能。

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