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    • 6. 发明授权
    • Method of fabricating temperature control device
    • 制造温度控制装置的方法
    • US06848171B2
    • 2005-02-01
    • US09817366
    • 2001-03-22
    • Kazuya KuriyamaYoichi Yasue
    • Kazuya KuriyamaYoichi Yasue
    • B23K1/00B23K3/00B23K101/40H01L21/00H01L21/02H05B3/00
    • H01L21/67248Y10T29/49083Y10T29/49126Y10T29/49128Y10T29/49144
    • A temperature control device with heat conduction properties such as heat homogeneity, responsiveness or the like is fabricated by improving flatness. In a method of fabricating a temperature control device (1) equipped with a temperature control element (2) configured by soft soldering a thermionic element (9) between the opposed electrodes (7) and (8) and a pair of heat conduction plates (3) and (4) disposed respectively on outside surfaces of respective insulating substrates (5) and (6) of the relevant temperature control device as well as electrodes (7) and (8) are formed respectively on opposing surfaces of a pair of insulating substrates (5) and (6) disposed in opposed positions, the heat conduction plate 4 is disposed on the outside surface of the insulating substrate 6 after soft soldering of the thermionic element 9 is performed, the insulating substrate 6 has the flexibility, in the soft soldering of the thermionic element 9, the soft solder 12a mixed with copper powder which is a layer thickness control member is used, and the soft soldering is carried out while adding the predetermined pressure.
    • 通过提高平坦度来制造具有热均匀性,响应性等导热特性的温度控制装置。 在制造温度控制装置(1)的方法中,所述温度控制装置(1)配备有通过软电焊接相对电极(7)和(8)之间的热离子元件(9)和一对导热板(2) 3)和(4)分别设置在相应的温度控制装置的各绝缘基板(5)和(6)的外表面上,以及电极(7)和(8)分别形成在一对绝缘体 设置在相对位置的基板(5)和(6),在进行热电偶元件9的软焊后,导热板4设置在绝缘基板6的外表面上,绝缘基板6具有柔性 使用热电偶元件9的软焊接,与作为层厚控制部件的铜粉混合的软焊料12a,并且在添加预定压力的同时进行软焊接。
    • 7. 发明授权
    • Welding process for Ti material and Cu material, and a backing plate for a sputtering target
    • Ti材料和Cu材料的焊接工艺,以及用于溅射靶的背板
    • US06789723B2
    • 2004-09-14
    • US09160665
    • 1998-09-25
    • Kazuya KuriyamaTakayuki FurukoshiYouichi Yasue
    • Kazuya KuriyamaTakayuki FurukoshiYouichi Yasue
    • B23K120
    • B23K35/007B23K35/005B23K35/262B23K35/302B23K2103/12B23K2103/14B23K2103/18
    • A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.
    • 将Cu材料焊接到Ti材料的焊接工艺包括在Ti材料和Cu材料之间插入第三成分。 第三组分是一种金属,其与Cu形成在低于Ti和Cu的共晶温度的温度下液化的化合物。 将上述材料在(700至887℃)的温度下加热和焊接。 所选择的温度低于Ti和Cu的共晶温度。 成品材料形成用于溅射的溅射背板。 结合到背板的Cu材料侧的目标构件完成溅射靶。 在一个实施方案中,通过控制沉积在Cu材料上的第三金属的厚度来实现第三金属的比例。 在另一个实施方案中,通过控制沉积在Cu和Ti材料之间的第三材料的粉末层的厚度来实现第三金属的比例。
    • 8. 发明授权
    • Method for bending SI materials and core wire member of SI materials
    • SI材料的SI材料和芯线构件的弯曲方法
    • US06548008B1
    • 2003-04-15
    • US09323781
    • 1999-06-01
    • Kazuya KuriyamaTakayuki Furukoshi
    • Kazuya KuriyamaTakayuki Furukoshi
    • B29C5308
    • B21D7/025
    • Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.
    • 被认为是非常脆的且难以弯曲的Si材料被加热到至少其脆性 - 延性转变温度。 弯曲力矩施加到Si材料的加热部分,从而产生滑动变形。 由此可以进行弯曲,并且大大提高了Si材料的加工自由度。 Si材料具有脆性 - 延性转变温度,其脆性 - 延性转变温度从脆性转变为延性。 在转变温度以上时,Si材料处于响应施加于其的弯曲转矩而在其晶体之间产生滑移的状态。 因此,当加热到转变温度以上的Si材料的加热部分施加弯曲力矩时,在加热部分的晶格之间或晶粒之间产生滑动,使得Si材料变形。