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1. 发明授权

US06551867B1 Non-volatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US06551867B1
公开(公告)日：2003-04-22
申请号：US09488917
申请日：2000-01-19
申请人： Kazuyuki Ozeki , Yukihiro Oya , Kazutoshi Kitazume , Hideo Azegami
发明人： Kazuyuki Ozeki , Yukihiro Oya , Kazutoshi Kitazume , Hideo Azegami
IPC分类号： H01L2100
CPC分类号： H01L27/11521 , H01L27/115
摘要： A non-volatile semiconductor memory device includes an interlayer dielectric film 9, 19 flattened by etching back an SOG film. In the non-volatile semiconductor memory device, a barrier film of a silicon nitride film 9D and 19D is formed to cover at least a memory cell composed of a floating gate 4, a control gate 6, etc. Because of such a structure, even if H or OH contained in the SOG is diffused, it will not be trapped by a tunneling film 3. This improves a “trap-up rate”. The barrier film may be formed in only an area covering the memory cell. This reduces its contact area with a tungsten silicide film, thereby suppressing film peeling-off. Thus, the operation life of the memory cell in the non-volatile semiconductor memory device can be improved.
摘要翻译：非挥发性半导体存储器件包括通过蚀刻SOG膜而平坦化的层间电介质膜9,19。在非易失性半导体存储器件中，形成氮化硅膜9D和19D的阻挡膜以至少覆盖由浮动栅极4，控制栅极6等组成的存储单元。由于这样的结构，即使如果包含在SOG中的H或OH扩散，则不会被隧道膜3捕获。这提高了“捕获率”。阻挡膜可以仅形成在覆盖存储单元的区域中。这就减少了与硅化钨膜的接触面积，从而抑制了膜的剥离。因此，可以提高非易失性半导体存储器件中的存储单元的使用寿命。

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