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1. 发明授权

US09158212B2 Exposure apparatus, exposure control system, and exposure method 有权
标题翻译：曝光装置，曝光控制系统和曝光方法
公开(公告)号：US09158212B2
公开(公告)日：2015-10-13
申请号：US13601311
申请日：2012-08-31
申请人： Kazutaka Ishigo
发明人： Kazutaka Ishigo
IPC分类号： G03B27/52 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70783 , G03F7/70641 , G03F9/7019
摘要： According to one embodiment, there is provided an exposure apparatus including an acquisition unit, and a calculation unit. The acquisition unit obtains a plurality of measured values. The plurality of measured values is measured for a plurality of focus offset quantities different from each other. Each of the plurality of measured values represents positional deviation distribution within a shot area. The calculation unit calculates a plurality of distortion errors from the plurality of measured values and obtains a correlation between the focus offset quantity and alignment compensation value to compensate for the distortion error, in response to the plurality of focus offset quantities and the plurality of distortion errors.
摘要翻译：根据一个实施例，提供一种包括获取单元和计算单元的曝光设备。获取单元获得多个测量值。对于彼此不同的多个聚焦偏移量来测量多个测量值。多个测量值中的每一个表示拍摄区域内的位置偏差分布。计算单元根据多个测量值计算多个失真误差，并且响应于多个聚焦偏移量和多个失真误差而获得聚焦偏移量和对准补偿值之间的相关性以补偿失真误差。

2. 发明授权

US08034515B2 Pattern forming method, pattern designing method, and mask set 有权
标题翻译：图案形成方法，图案设计方法和掩模组
公开(公告)号：US08034515B2
公开(公告)日：2011-10-11
申请号：US12556967
申请日：2009-09-10
申请人： Kazutaka Ishigo
发明人： Kazutaka Ishigo
IPC分类号： G03C5/00 , G03F1/00 , G03F9/00
CPC分类号： G03F7/70683 , G03F7/70633
摘要： A pattern designing method according to an embodiment of the present invention includes: designing a first pattern for inspection formed by arraying a plurality of first mark rows, in which rectangular marks are arrayed at predetermined intervals in a first direction, in a second direction perpendicular to the first direction and designing a second pattern for inspection formed by arraying, in the second direction, a plurality of second mark rows in which rectangular marks are arranged among the marks arrayed in the first direction of the first mark row and a forming position in the second direction is arranged to overlap the first mark row by predetermined overlapping length.
摘要翻译：根据本发明实施例的图案设计方法包括：通过排列多个第一标记行来设计用于检查的第一图案，其中矩形标记沿着第一方向以预定间隔排列，在垂直于第一方向并设计用于检查的第二图案，其在第二方向上排列多个第二标记行，其中在第一标记行的第一方向上排列的标记和第一标记行的形成位置之间布置有矩形标记第二方向布置成与第一标记行重叠预定的重叠长度。

3. 发明申请

US20130222777A1 EXPOSURE APPARATUS, EXPOSURE CONTROL SYSTEM, AND EXPOSURE METHOD 有权
标题翻译：曝光装置，曝光控制系统和曝光方法
公开(公告)号：US20130222777A1
公开(公告)日：2013-08-29
申请号：US13601311
申请日：2012-08-31
申请人： Kazutaka ISHIGO
发明人： Kazutaka ISHIGO
IPC分类号： G03B27/68
CPC分类号： G03F7/70783 , G03F7/70641 , G03F9/7019
摘要： According to one embodiment, there is provided an exposure apparatus including an acquisition unit, and a calculation unit. The acquisition unit obtains a plurality of measured values. The plurality of measured values is measured for a plurality of focus offset quantities different from each other. Each of the plurality of measured values represents positional deviation distribution within a shot area. The calculation unit calculates a plurality of distortion errors from the plurality of measured values and obtains a correlation between the focus offset quantity and alignment compensation value to compensate for the distortion error, in response to the plurality of focus offset quantities and the plurality of distortion errors.
摘要翻译：根据一个实施例，提供一种包括获取单元和计算单元的曝光设备。获取单元获得多个测量值。对于彼此不同的多个聚焦偏移量来测量多个测量值。多个测量值中的每一个表示拍摄区域内的位置偏差分布。计算单元根据多个测量值计算多个失真误差，并且响应于多个聚焦偏移量和多个失真误差而获得聚焦偏移量和对准补偿值之间的相关性以补偿失真误差。

4. 发明申请

US20100211352A1 MARK ARRANGEMENT INSPECTING METHOD, MASK DATA, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的标记检查方法，掩模数据和制造方法
公开(公告)号：US20100211352A1
公开(公告)日：2010-08-19
申请号：US12649477
申请日：2009-12-30
申请人： Hiroyuki MORINAGA , Kazutaka Ishigo , Takaki Kumanomido
发明人： Hiroyuki MORINAGA , Kazutaka Ishigo , Takaki Kumanomido
IPC分类号： G06F15/00 , G06F17/50 , H01L21/30
CPC分类号： G03F9/7046
摘要： A method of inspecting a mark arrangement according to an embodiment of the present invention includes: generating mask data in which mark seed data that includes an inspection mark that includes vector information and is not drawn on a mask and mark data is arranged on a scribe line of the mask, calculating coordinates of the inspection mark from a reference position of the mark seed data, detecting an arrangement state of the inspection mark with respect to the reference position by using the coordinates and vector information, and judging whether the mark seed data is correctly arranged by comparing the arrangement state of the inspection mark with an arrangement check rule.
摘要翻译：根据本发明的实施例的检查标记装置的方法包括：生成掩码数据，其中包括包括矢量信息的检查标记的标记种子数据并且未绘制在掩码上并且标记数据被布置在划线从所述标记种子数据的参考位置计算所述检查标记的坐标，使用所述坐标和向量信息检测所述检查标记相对于所述参考位置的布置状态，并且判断所述标记种子数据是否为通过比较检查标记的布置状态和布置检查规则来正确布置。

5. 发明申请

US20080206898A1 Pattern Monitor Mark and Monitoring Method Suitable for Micropattern 有权
标题翻译：模式监视器标记和监视方法适用于微图案
公开(公告)号：US20080206898A1
公开(公告)日：2008-08-28
申请号：US12037757
申请日：2008-02-26
申请人： Kazuya FUKUHARA , Kazutaka Ishigo
发明人： Kazuya FUKUHARA , Kazutaka Ishigo
IPC分类号： H01L21/66 , H01L21/76
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of forming a monitor mark includes forming an insulating film on a semiconductor substrate, and forming a first repetitive line pattern group and a second repetitive line pattern group by patterning the insulating film on the semiconductor substrate, such that the first repetitive line pattern group and the second repetitive line pattern group face each other with a predetermined space therebetween.
摘要翻译：形成监视标记的方法包括在半导体衬底上形成绝缘膜，并且通过对半导体衬底上的绝缘膜进行构图来形成第一重复线图案组和第二重复线图案组，使得第一重复线图案组并且第二重复线图案组之间以预定的间隔彼此面对。

6. 发明授权

US08364437B2 Mark arrangement inspecting method, mask data, and manufacturing method of semiconductor device 有权
标题翻译：标记排列检查方法，掩模数据和半导体器件的制造方法
公开(公告)号：US08364437B2
公开(公告)日：2013-01-29
申请号：US12649477
申请日：2009-12-30
申请人： Hiroyuki Morinaga , Kazutaka Ishigo , Takaki Kumanomido
发明人： Hiroyuki Morinaga , Kazutaka Ishigo , Takaki Kumanomido
IPC分类号： G01C9/00 , G01C17/00 , G01C19/00
CPC分类号： G03F9/7046
摘要： A method of inspecting a mark arrangement according to an embodiment of the present invention includes: generating mask data in which mark seed data that includes an inspection mark that includes vector information and is not drawn on a mask and mark data is arranged on a scribe line of the mask, calculating coordinates of the inspection mark from a reference position of the mark seed data, detecting an arrangement state of the inspection mark with respect to the reference position by using the coordinates and vector information, and judging whether the mark seed data is correctly arranged by comparing the arrangement state of the inspection mark with an arrangement check rule.
摘要翻译：根据本发明的实施例的检查标记装置的方法包括：生成掩码数据，其中包括包括矢量信息的检查标记的标记种子数据并且未绘制在掩码上并且标记数据被布置在划线从所述标记种子数据的参考位置计算所述检查标记的坐标，使用所述坐标和向量信息检测所述检查标记相对于所述参考位置的布置状态，并且判断所述标记种子数据是否为通过比较检查标记的布置状态和布置检查规则来正确布置。

7. 发明授权

US07973419B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07973419B2
公开(公告)日：2011-07-05
申请号：US11582348
申请日：2006-10-18
申请人： Tomoyasu Kudo , Kazutaka Ishigo
发明人： Tomoyasu Kudo , Kazutaka Ishigo
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F9/7076 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，其包括半导体衬底，形成在半导体衬底上的p型杂质扩散层和形成在扩散层上的Ni硅化物，其中用于光刻的对准标记形成在镍硅化物。

8. 发明授权

US07906258B2 Photomask, photomask superimposition correcting method, and manufacturing method of semiconductor device 有权
标题翻译：光掩模，光掩模叠加校正方法和半导体器件的制造方法
公开(公告)号：US07906258B2
公开(公告)日：2011-03-15
申请号：US12047516
申请日：2008-03-13
申请人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
发明人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
IPC分类号： G03F1/00 , G03C5/00 , H01L21/00
CPC分类号： G03F9/7076 , G03F1/36 , G03F1/42 , G03F7/70633
摘要： In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
摘要翻译：在其中在透光基底上形成器件图案，对准标记和叠加检查标记的光掩模中，每个对准标记和叠加检查标记都包括主标记部分和第一和第二辅助图案部分。主标记部分由空间图案和线条图案之一构成，该图形具有在半导体晶片上形成的感光膜上被分辨的线宽，并且第一和第二辅助图案部分中的每一个包括辅助图案由空间图案的重复图案和线图案的重复图案之一构成，重复图案具有在感光膜上不被分辨的线宽。重复图案的间距等于设备图案的最小间距。

9. 发明申请

US20100291477A1 PATTERN FORMING METHOD, PATTERN DESIGNING METHOD, AND MASK SET 有权
标题翻译：图案形成方法，图案设计方法和掩模设置
公开(公告)号：US20100291477A1
公开(公告)日：2010-11-18
申请号：US12556967
申请日：2009-09-10
申请人： Kazutaka ISHIGO
发明人： Kazutaka ISHIGO
IPC分类号： G03F7/00 , G03F1/00
CPC分类号： G03F7/70683 , G03F7/70633
摘要： A pattern designing method according to an embodiment of the present invention includes: designing a first pattern for inspection formed by arraying a plurality of first mark rows, in which rectangular marks are arrayed at predetermined intervals in a first direction, in a second direction perpendicular to the first direction and designing a second pattern for inspection formed by arraying, in the second direction, a plurality of second mark rows in which rectangular marks are arranged among the marks arrayed in the first direction of the first mark row and a forming position in the second direction is arranged to overlap the first mark row by predetermined overlapping length.
摘要翻译：根据本发明实施例的图案设计方法包括：通过排列多个第一标记行来设计用于检查的第一图案，其中矩形标记沿着第一方向以预定间隔排列，在垂直于第一方向并设计用于检查的第二图案，其在第二方向上排列多个第二标记行，其中在第一标记行的第一方向上排列的标记和第一标记行的形成位置之间布置有矩形标记第二方向布置成与第一标记行重叠预定的重叠长度。

10. 发明申请

US20090246709A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090246709A1
公开(公告)日：2009-10-01
申请号：US12407142
申请日：2009-03-19
申请人： Tetsuro NAKASUGI , Takashi SATO , Kazutaka ISHIGO
发明人： Tetsuro NAKASUGI , Takashi SATO , Kazutaka ISHIGO
IPC分类号： G03F7/20 , B28B11/08
CPC分类号： H01L23/544 , B82Y10/00 , B82Y40/00 , G03F1/42 , G03F1/70 , G03F7/0002 , G03F7/70466 , G03F7/70633 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device includes preparing a first circuit pattern original plate including a first pattern part of a mark pattern, preparing a second circuit pattern original plate including a second pattern part of the mark pattern, transferring the first pattern part to a mask film on an underlying area to form a first transfer pattern part in the mask film, transferring the second pattern part to the mask film to form a second transfer pattern part in the mask film, and patterning the underlying area by using the mask film including a transfer mark pattern, which is obtained by combining the first transfer pattern part and the second transfer pattern part, as a mask to form an underlying mark pattern in the underlying area.
摘要翻译：半导体器件的制造方法包括：制备包括标记图案的第一图案部分的第一电路图案原版，制备包括标记图案的第二图案部分的第二电路图案原版，将第一图案部分转印到掩模在掩模膜上形成第一转印图案部分，将第二图案部分转印到掩模膜上，以在掩模膜中形成第二转印图案部分，并通过使用掩模膜对其下面的区域进行图案化转印标记图案，其通过组合第一转印图案部分和第二转印图案部分而获得，作为掩模，以在下面的区域中形成下面的标记图案。

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