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1. 发明授权

US08421161B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08421161B2
公开(公告)日：2013-04-16
申请号：US12656320
申请日：2010-01-26
申请人： Kazushige Iwamoto
发明人： Kazushige Iwamoto
IPC分类号： H01L27/088
CPC分类号： H01L21/823493 , H01L21/823418 , H01L21/823462 , H01L29/66659
摘要： A semiconductor device has a semiconductor substrate in which first and second wells are formed. The substrate and wells are of the same conductivity type, but the second well has a higher impurity concentration than the first well. High-voltage MOS transistors are formed in the first well, and a low-voltage MOS transistor is formed in the second well. The high-voltage MOS transistors include a first transistor having a gate oxide layer with a first thickness and a second transistor having a gate oxide layer with a second thickness less than the first thickness. The low-voltage MOS transistor has a third gate oxide layer with a third thickness less than the first thickness. The second high-voltage MOS transistor provides efficient current conduction.
摘要翻译：半导体器件具有其中形成第一和第二阱的半导体衬底。衬底和阱具有相同的导电类型，但是第二阱具有比第一阱更高的杂质浓度。在第一阱中形成高压MOS晶体管，在第二阱中形成低压MOS晶体管。高压MOS晶体管包括具有第一厚度的栅极氧化物层的第一晶体管和具有小于第一厚度的第二厚度的栅极氧化物层的第二晶体管。低压MOS晶体管具有第三厚度小于第一厚度的第三栅极氧化层。第二高压MOS晶体管提供有效的电流传导。

2. 发明授权

US5300172A Surface-protection method during etching 失效
标题翻译：刻蚀过程中的表面保护方法
公开(公告)号：US5300172A
公开(公告)日：1994-04-05
申请号：US968353
申请日：1992-10-29
申请人： Shinichi Ishiwata , Kazushige Iwamoto , Michio Ueyama , Isamu Noguchi
发明人： Shinichi Ishiwata , Kazushige Iwamoto , Michio Ueyama , Isamu Noguchi
IPC分类号： H01L21/302 , H01L21/308 , H01L21/312 , B32B31/00
CPC分类号： H01L21/3081 , Y10S438/948
摘要： There is disclosed a surface-protection method during chemical etching of a plate material, which comprises sticking a radiation-curable adhesive tape onto the area of plate material where etching should not be effected, and after the radiation-curable adhesive layer is cured with irradiation of radiation, subjecting said plate material to a chemical etching treatment.
摘要翻译：公开了在板材的化学蚀刻期间的表面保护方法，其包括将辐射固化粘合带粘附到不应进行蚀刻的板材的区域上，并且在辐射固化粘合剂层用辐照固化之后的辐射，对所述板材进行化学蚀刻处理。

3. 发明授权

US5538771A Semiconductor wafer-securing adhesive tape 失效
标题翻译：半导体晶片固定胶带
公开(公告)号：US5538771A
公开(公告)日：1996-07-23
申请号：US106998
申请日：1993-08-17
申请人： Koji Nakayama , Kenji Mougi , Eiji Shiramatsu , Kazushige Iwamoto , Shinichi Ishiwata , Morikuni Hasebe
发明人： Koji Nakayama , Kenji Mougi , Eiji Shiramatsu , Kazushige Iwamoto , Shinichi Ishiwata , Morikuni Hasebe
IPC分类号： C08L53/02 , C09J7/02 , H01L21/68 , B32B7/12
CPC分类号： H01L21/6836 , C08L53/02 , C08L53/025 , C09J7/0296 , C09J2201/162 , C09J2203/326 , H01L2221/68327 , Y10T428/1452 , Y10T428/2809 , Y10T428/2839 , Y10T428/2843 , Y10T428/2848 , Y10T428/3175 , Y10T428/31757 , Y10T428/31924 , Y10T428/31928 , Y10T428/31931
摘要： There is disclosed a semiconductor wafer-securing adhesive tape having a radiation-curable adhesive layer on one surface of a support film, wherein the support film is composed of a laminated film that comprises, as a center layer, a film comprising a styrene/ethylene/butene/styrene block copolymer, a ethylene/acrylic acid-type copolymer, and a polyamide/polyether copolymer in a specific ratio, and has a layer for adhesive coating laid, directly or through a bonding layer, on one surface of the center layer on the side where said radiation-curable adhesive layer is provided, and has a transfer-preventing layer laid, directly or through a bonding layer, on the other surface of the center layer. There is also disclosed a semiconductor wafer-securing adhesive tape wherein the center layer of said semiconductor wafer-securing adhesive tape has a film comprising said SEBS block copolymer or SEPS block copolymer, an amorphous poly .alpha.-olefin, and a polyamide/polyether copolymer, in a specific ratio.
摘要翻译：公开了一种在支撑膜的一个表面上具有可辐射固化粘合剂层的半导体晶片固定粘合带，其中支撑膜由层压膜构成，该层压膜包括作为中心层的包含苯乙烯/乙烯 /丁烯/苯乙烯嵌段共聚物，乙烯/丙烯酸类共聚物和特定比例的聚酰胺/聚醚共聚物，并且具有直接或通过粘合层在中心层的一个表面上铺设的粘合剂涂层在所述可辐射固化粘合剂层的一侧上，并且在中心层的另一个表面上具有直接或通过粘结层铺设的防转移层。还公开了一种半导体晶片固定胶带，其中所述半导体晶片固定胶带的中心层具有包含所述SEBS嵌段共聚物或SEPS嵌段共聚物的膜，无定形聚α-烯烃和聚酰胺/聚醚共聚物，具体比例。

4. 发明授权

US5149586A Radiation-curable adhesive tape 失效
标题翻译：可辐射固化胶带
公开(公告)号：US5149586A
公开(公告)日：1992-09-22
申请号：US631902
申请日：1990-12-21
申请人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
发明人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
IPC分类号： C09J4/06 , C09J7/02
CPC分类号： H01L21/6836 , C09J4/06 , C09J7/0217 , C09J7/0296 , C09J2201/162 , C09J2203/326 , H01L2221/68327 , Y10T428/2809 , Y10T428/2848 , Y10T428/2891 , Y10T428/2896
摘要： There is a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.
摘要翻译：存在辐射固化型胶带，其包含形成在辐射透射基板上的可辐射固化粘合剂层。辐射固化粘合剂层由丙烯酸粘合剂和具有碳 - 碳双键的可辐射固化的化合物组成。放射线固化胶带可以优选用于使用直接拾取系统制造半导体晶片，陶瓷和玻璃的加工步骤。

5. 发明授权

US4999242A Radiation-curable adhesive tape 失效
标题翻译：可辐射固化胶带
公开(公告)号：US4999242A
公开(公告)日：1991-03-12
申请号：US216269
申请日：1988-07-07
申请人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
发明人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
IPC分类号： C09J4/06 , C09J7/02
CPC分类号： H01L21/6836 , C09J4/06 , C09J7/0217 , C09J7/0296 , C09J2201/162 , C09J2203/326 , H01L2221/68327 , Y10T428/2809 , Y10T428/2848 , Y10T428/2878 , Y10T428/2896
摘要： There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

6. 发明申请

US20100187639A1 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187639A1
公开(公告)日：2010-07-29
申请号：US12656320
申请日：2010-01-26
申请人： Kazushige Iwamoto
发明人： Kazushige Iwamoto
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L21/823493 , H01L21/823418 , H01L21/823462 , H01L29/66659
摘要： A semiconductor device has a semiconductor substrate in which first and second wells are formed. The substrate and wells are of the same conductivity type, but the second well has a higher impurity concentration than the first well. High-voltage MOS transistors are formed in the first well, and a low-voltage MOS transistor is formed in the second well. The high-voltage MOS transistors include a first transistor having a gate oxide layer with a first thickness and a second transistor having a gate oxide layer with a second thickness less than the first thickness. The low-voltage MOS transistor has a third gate oxide layer with a third thickness less than the first thickness. The second high-voltage MOS transistor provides efficient current conduction.
摘要翻译：半导体器件具有其中形成第一和第二阱的半导体衬底。衬底和阱具有相同的导电类型，但是第二阱具有比第一阱更高的杂质浓度。在第一阱中形成高压MOS晶体管，在第二阱中形成低压MOS晶体管。高压MOS晶体管包括具有第一厚度的栅极氧化物层的第一晶体管和具有小于第一厚度的第二厚度的栅极氧化物层的第二晶体管。低压MOS晶体管具有第三厚度小于第一厚度的第三栅极氧化层。第二高压MOS晶体管提供有效的电流传导。

7. 发明授权

US5281473A Radiation-curable adhesive tape 失效
标题翻译：可辐射固化胶带
公开(公告)号：US5281473A
公开(公告)日：1994-01-25
申请号：US840948
申请日：1992-02-25
申请人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
发明人： Shinichi Ishiwata , Michio Ueyama , Hiroyuki Nakae , Yoshiyuki Funayama , Kazushige Iwamoto , Isamu Noguchi
IPC分类号： C09J4/06 , C09J7/02 , B32B7/12 , C08J3/28
CPC分类号： H01L21/6836 , C09J4/06 , C09J7/0217 , C09J7/0296 , C09J2201/162 , C09J2203/326 , H01L2221/68327 , Y10T428/2809 , Y10T428/2848 , Y10T428/2891 , Y10T428/2896
摘要： There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.
摘要翻译：提供了一种辐射固化胶带，其包括形成在辐射透射基底上的可辐射固化粘合剂层。辐射固化粘合剂层由丙烯酸粘合剂和具有碳 - 碳双键的可辐射固化的化合物组成。放射线固化胶带可以优选用于使用直接拾取系统制造半导体晶片，陶瓷和玻璃的加工步骤。

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