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1. 发明授权

US08710548B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08710548B2
公开(公告)日：2014-04-29
申请号：US12795143
申请日：2010-06-07
申请人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
发明人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/7787 , H01L29/872
摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层肖特基电极和欧姆电极暴露。第二半导体层具有比第一半导体层更大的带隙。

2. 发明申请

US20120012893A1 SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体晶体管及其制造方法
公开(公告)号：US20120012893A1
公开(公告)日：2012-01-19
申请号：US13177913
申请日：2011-07-07
申请人： Kazushi NAKAZAWA
发明人： Kazushi NAKAZAWA
IPC分类号： H01L29/812 , H01L21/338 , B82Y99/00
CPC分类号： H01L29/8128 , H01L29/42316 , H01L29/66462 , H01L29/66871 , H01L29/7787
摘要： To provide a semiconductor transistor without variation in threshold voltage of an FET and a method of manufacturing the semiconductor transistor, the semiconductor transistor includes: a substrate; a first compound semiconductor layer formed above the substrate; a second compound semiconductor layer formed on the first compound semiconductor layer and having a bandgap larger than a bandgap of the first compound semiconductor layer; an oxygen-doped region formed by doping at least part of the second compound semiconductor layer with oxygen; a third compound semiconductor layer formed on the second compound semiconductor layer; a source electrode electrically connected to the first compound semiconductor layer; a drain electrode electrically connected to the first compound semiconductor layer; and a gate electrode formed on and in contact with the oxygen-doped region.
摘要翻译：为了提供没有FET的阈值电压的变化的半导体晶体管和制造半导体晶体管的方法，所述半导体晶体管包括：衬底; 形成在所述基板上方的第一化合物半导体层; 形成在所述第一化合物半导体层上并具有大于所述第一化合物半导体层的带隙的带隙的第二化合物半导体层; 通过用氧将至少部分第二化合物半导体层掺杂而形成的氧掺杂区; 形成在第二化合物半导体层上的第三化合物半导体层; 电极，与所述第一化合物半导体层电连接; 电连接到所述第一化合物半导体层的漏电极; 以及形成在氧掺杂区上并与氧掺杂区接触的栅电极。

3. 发明申请

US20100213503A1 BIODIRECTIONAL SWITCH 有权
标题翻译：生物开关
公开(公告)号：US20100213503A1
公开(公告)日：2010-08-26
申请号：US12681567
申请日：2009-07-10
申请人： Manabu Yanagihara , Kazushi Nakazawa , Tatsuo Morita , Yasuhiro Uemoto
发明人： Manabu Yanagihara , Kazushi Nakazawa , Tatsuo Morita , Yasuhiro Uemoto
IPC分类号： H01L29/747
CPC分类号： H01L27/088 , H01L23/481 , H01L23/4824 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
摘要翻译：双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。

4. 发明申请

US20070235768A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070235768A1
公开(公告)日：2007-10-11
申请号：US11730422
申请日：2007-04-02
申请人： Kazushi Nakazawa , Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Kazushi Nakazawa , Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L27/10
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/66212
摘要： A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.
摘要翻译：半导体器件包括：由III族氮化物半导体制成并具有与第一表面相对的第一表面和第二表面的半导体层; 形成在半导体层的第一表面上的肖特基电极; 以及与半导体层的第二表面电连接的欧姆电极。半导体层至少在其上部具有选择性地形成为具有高电阻的高电阻区域。

5. 发明申请

US20110037101A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110037101A1
公开(公告)日：2011-02-17
申请号：US12667999
申请日：2009-03-27
申请人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01L29/205 , H01L29/80 , H01L29/737 , H01L29/20
CPC分类号： H01L29/7371 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/207 , H01L29/432 , H01L29/7787
摘要： A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.
摘要翻译：半导体器件包括未掺杂的GaN层（13），未掺杂的AlGaN层（14）和p型GaN层（15）。在p型GaN层（15）中，选择性地形成高电阻区域（15a）。可以通过引入过渡金属例如钛来增加高电阻区域（15a）的电阻。

6. 发明申请

US20110024797A1 NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION 审中-公开
标题翻译：基于氮化物的半导体器件，带有栅极区域
公开(公告)号：US20110024797A1
公开(公告)日：2011-02-03
申请号：US12903505
申请日：2010-10-13
申请人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
发明人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
IPC分类号： H01L29/778 , H01L29/772
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

7. 发明授权

US07821030B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821030B2
公开(公告)日：2010-10-26
申请号：US11363947
申请日：2006-03-01
申请人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
发明人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/7787 , H01L29/872
摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层肖特基电极和欧姆电极暴露。第二半导体层具有比第一半导体层更大的带隙。

8. 发明授权

US07838904B2 Nitride based semiconductor device with concave gate region 有权
标题翻译：氮化物半导体器件，具有凹入栅极区域
公开(公告)号：US07838904B2
公开(公告)日：2010-11-23
申请号：US12023461
申请日：2008-01-31
申请人： Kazushi Nakazawa , Satoshi Nakazawa , Tetsuzo Ueda , Tsuyoshi Tanaka , Masahiro Hikita
发明人： Kazushi Nakazawa , Satoshi Nakazawa , Tetsuzo Ueda , Tsuyoshi Tanaka , Masahiro Hikita
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

9. 发明授权

US07550821B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07550821B2
公开(公告)日：2009-06-23
申请号：US11952407
申请日：2007-12-07
申请人： Daisuke Shibata , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
发明人： Daisuke Shibata , Kazushi Nakazawa , Masahiro Hikita , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Tsuyoshi Tanaka
IPC分类号： H01L29/20
CPC分类号： H01L29/7786 , H01L21/76831 , H01L24/05 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L2224/05624 , H01L2224/05647 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板的主表面上的氮化物半导体层，具有沟道区域，电子沿着与所述主表面平行的方向漂移的沟道区域; 以及在氮化物半导体层中的有源区上彼此隔开形成的多个第一电极和多个第二电极。在氮化物半导体层上形成层间绝缘膜。层间绝缘膜具有分别暴露第一电极并具有平坦化顶表面的开口。第一电极焊盘形成在层间绝缘膜中的有源区上方的区域中，并且通过相应的开口与暴露的第一电极电连接。

10. 发明申请

US20080179694A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080179694A1
公开(公告)日：2008-07-31
申请号：US12023461
申请日：2008-01-31
申请人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
发明人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
IPC分类号： H01L29/00 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

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