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1. 发明申请

US20110290656A1 METHOD FOR ELECTROCHEMICALLY DEPOSITING CARBON NITRIDE FILMS ON A SUBSTRATE 有权
标题翻译：用于电化学沉积在衬底上的碳氮化物膜的方法
公开(公告)号：US20110290656A1
公开(公告)日：2011-12-01
申请号：US12789959
申请日：2010-05-28
申请人： Tokujiro NISHIKIORI , Hiroaki AMAHASHI , Kouji KURODA , Yasuhiko ITO , Kazuhito FUKASAWA , Naohiro YASUDA
发明人： Tokujiro NISHIKIORI , Hiroaki AMAHASHI , Kouji KURODA , Yasuhiko ITO , Kazuhito FUKASAWA , Naohiro YASUDA
IPC分类号： C25D3/66 , C25D9/04
CPC分类号： C25D3/66 , C25D9/04
摘要： Dense carbon nitride films are electrochemically formed on a conductive substrate by placing the substrate acting as cathode in a molten salt electrolyte bath and applying DC current across the substrate and a counter electrode acting as anode also placed in the molten salt electrolyte bath. Carbonate ion and nitrate ion are concurrently reduced to deposit carbon nitride films on the substrate.
摘要翻译：通过将作为阴极的基板放置在熔融盐电解液浴中并在基板上施加直流电流，并将作为阳极的反电极也放置在熔融盐电解质浴中，将致密的碳氮化物膜电化学地形成在导电基板上。同时还原碳酸根离子和硝酸根离子以在衬底上沉积氮化碳膜。

2. 发明授权

US07642368B2 Process for producing triarylsulfonium salt 有权
标题翻译：三芳基锍盐的制备方法
公开(公告)号：US07642368B2
公开(公告)日：2010-01-05
申请号：US10576299
申请日：2004-10-04
申请人： Motoshige Sumino , Kazuhito Fukasawa , Shigeaki Imazeki , Tetsuya Watanabe
发明人： Motoshige Sumino , Kazuhito Fukasawa , Shigeaki Imazeki , Tetsuya Watanabe
IPC分类号： C07F255/00
CPC分类号： C07C381/12
摘要： A method for producing a triarylsulfonium salt having a structure that only one of the three arobatic rings of the three aromatic rings on the cationic portion is different from the other two aromatic groups, and which is useful, for example, as an acid-generating agent for a resist or a photo cationic polymerization initiator, by reacting a diaryl sulfoxide and an aryl Grignard reagent RMgX [2] in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid HA1 [3].
摘要翻译：一种三芳基锍盐的制造方法，其具有以下结构，阳离子部分上的三个芳香环的三个杂环中只有一个与其它两个芳族基团不同，可用于例如酸产生剂对于抗蚀剂或光阳离子聚合引发剂，通过二烯基亚砜和芳基格氏试剂RMgX [2]在活化剂存在下，相对于上述二芳基亚砜具有3至7.5当量的高亲氧度，然后使所得反应混合物用强酸HA1 [3]。

3. 发明授权

US08545688B2 Method for electrochemically depositing carbon nitride films on a substrate 有权
标题翻译：在基板上电化学沉积氮化碳膜的方法
公开(公告)号：US08545688B2
公开(公告)日：2013-10-01
申请号：US12789959
申请日：2010-05-28
申请人： Tokujiro Nishikiori , Hiroaki Amahashi , Kouji Kuroda , Yasuhiko Ito , Kazuhito Fukasawa , Naohiro Yasuda
发明人： Tokujiro Nishikiori , Hiroaki Amahashi , Kouji Kuroda , Yasuhiko Ito , Kazuhito Fukasawa , Naohiro Yasuda
IPC分类号： C25D3/66
CPC分类号： C25D3/66 , C25D9/04
摘要： Dense carbon nitride films are electrochemically formed on a conductive substrate by placing the substrate acting as cathode in a molten salt electrolyte bath and applying DC current across the substrate and a counter electrode acting as anode also placed in the molten salt electrolyte bath. Carbonate ion and nitrate ion are concurrently reduced to deposit carbon nitride films on the substrate.
摘要翻译：通过将作为阴极的基板放置在熔融盐电解液浴中并在基板上施加直流电流，并将作为阳极的反电极也放置在熔融盐电解质浴中，将致密的碳氮化物膜电化学地形成在导电基板上。同时还原碳酸根离子和硝酸根离子以在衬底上沉积氮化碳膜。

4. 发明授权

US06924323B2 Sulfonium salt compound 有权
标题翻译：锍盐化合物
公开(公告)号：US06924323B2
公开(公告)日：2005-08-02
申请号：US10312572
申请日：2001-06-27
申请人： Masami Ishihara , Motoshige Sumino , Kazuhito Fukasawa , Naoki Katano , Shigeaki Imazeki
发明人： Masami Ishihara , Motoshige Sumino , Kazuhito Fukasawa , Naoki Katano , Shigeaki Imazeki
IPC分类号： C07C53/21 , C07C381/12 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： C07C53/21 , C07C381/12 , G03F7/0045 , G03F7/0382 , G03F7/0392
摘要： A compound shown by the general formula [1] (wherein R1, R2 and R3 are each independently an aromatic hydrocarbon residual group, Yn− is an anion derived from a carboxylic acid having 3 or more carbon atoms with substituted fluorine atoms, and n is 1 or 2, provided that R1, R2 and R3 each is not a phenyl group having substituents at an ortho and/or a meta position), and a composition consisting of the compound and a diazodisulfone compound are disclosed. Use of the compound or the compound as an acid generator for resists produces the effects of improving the profiles of ultra-fine patterns or diminishing sidewall irregularities in ultra-fine patterns. The compound is also useful as a cationic photopolymerization initiator.
摘要翻译：由通式[1]表示的化合物（其中R 1，R 2，R 2和R 3）各自独立地为芳族烃残基， Y是由具有3个以上具有取代氟原子的碳原子的羧酸衍生的阴离子，n是1或2，条件是R 1，R 2，每个不是在邻位和/或间位具有取代基的苯基），并且由该化合物和重氮二砜化合物组成的组合物被公开。化合物或化合物作为酸产生剂用于抗蚀剂的用途产生改善超细图案的轮廓或减少超细图案中的侧壁不规则性的效果。该化合物也可用作阳离子光聚合引发剂。

5. 发明申请

US20070083060A1 Process for producing triarylsulfonium salt 有权
公开(公告)号：US20070083060A1
公开(公告)日：2007-04-12
申请号：US10576299
申请日：2004-10-04
申请人： Motoshige Sumino , Kazuhito Fukasawa , Shigeaki Imazeki , Tetsuya Watanabe
发明人： Motoshige Sumino , Kazuhito Fukasawa , Shigeaki Imazeki , Tetsuya Watanabe
IPC分类号： C07C319/22
CPC分类号： C07C381/12
摘要： [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R1's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R1; and A1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX [2]wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA1 [3] wherein, A1 represents the same as above, or a salt thereof.

6. 发明授权

US06723483B1 Sulfonium salt compounds 失效
标题翻译：锍盐化合物
公开(公告)号：US06723483B1
公开(公告)日：2004-04-20
申请号：US09730744
申请日：2000-12-07
申请人： Keiji Oono , Kazuhito Fukasawa , Kazunori Sakamoto , Fumiyoshi Urano , Motoshige Sumino , Shigeaki Imazeki
发明人： Keiji Oono , Kazuhito Fukasawa , Kazunori Sakamoto , Fumiyoshi Urano , Motoshige Sumino , Shigeaki Imazeki
IPC分类号： G03F7004
CPC分类号： C07C381/12 , G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A triphenyl sulfonium salt compound shown by the general formula [1] or [3]. (wherein R1 and R2 are each independently a hydrogen atom or a lower alkyl group, provided that at least one of R1 and R2 are a lower alkyl group, R3s are each independently an alkyl group, n is an integer of 0 to 3, i is an integer of 1 to 3, j is an integer of 0 to 2, provided that i+j=3, Y− is an anion derived from a sulfonic acid shown by the general formula [2] R4—SO3H [2] [wherein R4 is an alkyl group or an aryl group which may have as a substituent an alkyl group]). (wherein X is a phenyl group which has a substituent at an ortho- and/or a meta-position, m is an integer of 1 to 3, q is an integer of 0 to 2, provided that m+q=3, p is 1 or 2 and Zp− is an anion derived from a carboxylic acid).
摘要翻译：由通式[1]或[3]表示的三苯基锍盐化合物（其中R 1和R 2各自独立地为氢原子或低级烷基，条件是R 1至少有一个 >和R 2为低级烷基，R 3各自独立地为烷基，n为0〜3的整数，i为1〜3的整数，j为0〜2的整数条件是i + j = 3，Y 1是由通式[2]所示的衍生自磺酸的阴离子[其中R 4是可以具有取代基的烷基或芳基烷基]）（其中X是在邻位和/或间位具有取代基的苯基，m为1〜3的整数，q为0〜2的整数，条件是m + q = 3，p为1或2，Z
为衍生自羧酸的阴离子）。

7. 发明授权

US5856521A Acrylic or methacrylic acid derivatives and polymers obtained therefrom 失效
标题翻译：丙烯酸或甲基丙烯酸衍生物和由其获得的聚合物
公开(公告)号：US5856521A
公开(公告)日：1999-01-05
申请号：US66900
申请日：1998-04-28
申请人： Motoshige Sumino , Kazuhito Fukasawa
发明人： Motoshige Sumino , Kazuhito Fukasawa
IPC分类号： C07C69/734 , C07D317/30 , C07D317/72 , C07D319/06 , C08F18/12 , C08F20/28 , G03F7/004 , G03F7/039 , C07D305/06 , C07C255/03 , C07D331/04 , C08F20/10
CPC分类号： C07D317/72 , C07C69/734 , C07D317/30 , C07D319/06 , C08F18/12 , C08F20/28 , G03F7/0045 , G03F7/039
摘要： A monomer of the formula: ##STR1## wherein R5, R6 and R7 are independently hydrogen, alkyl, cyano, alkyloxycarbonyl or carbamoyl; Z is a spacer or a direct link; and R is hydroxyalkyl having a protected terminal hydroxy, can produce a polymer useful for producting a resist composition.
摘要翻译：下式的单体：其中R5，R6和R7独立地是氢，烷基，氰基，烷氧基羰基或氨基甲酰基; Z是间隔或直接连接; 并且R是具有被保护的末端羟基的羟烷基，可以制备可用于产生抗蚀剂组合物的聚合物。

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