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1. 发明授权

US09487862B2 Semiconductor growing apparatus 有权
标题翻译：半导体生长装置
公开(公告)号：US09487862B2
公开(公告)日：2016-11-08
申请号：US13190710
申请日：2011-07-26
申请人： Kazuhiko Horino
发明人： Kazuhiko Horino
IPC分类号： C23C16/455 , C23C16/458 , C30B25/12
CPC分类号： C23C16/4586 , C30B25/12
摘要： A semiconductor growing apparatus including: a susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor.
摘要翻译：一种半导体生长装置，包括：具有主面和侧面的基座，所述主面接收用于生长半导体层的基板，所述侧面具有凹槽; 用于加热基座的加热元件。

2. 发明申请

US20090098676A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE 审中-公开
标题翻译：制造发光二极管的方法
公开(公告)号：US20090098676A1
公开(公告)日：2009-04-16
申请号：US12249462
申请日：2008-10-10
申请人： Reiko SOEJIMA , Keiichi YUI , Kazuhiko HORINO
发明人： Reiko SOEJIMA , Keiichi YUI , Kazuhiko HORINO
IPC分类号： H01L21/00 , H01L21/28
CPC分类号： H01L33/007 , H01L33/0095
摘要： A method of manufacturing a light emitting diode includes forming an active layer of a nitride semiconductor on a first conductive type of a nitride semiconductor layer, thermally treating the active layer at a first temperature, and forming a second conductive type of a nitride semiconductor layer on the active layer at a second temperature lower than the first temperature.
摘要翻译：一种制造发光二极管的方法包括在第一导电类型的氮化物半导体层上形成氮化物半导体的有源层，在第一温度下热处理有源层，以及在第二导电类型上形成第二导电类型的氮化物半导体层在比第一温度低的第二温度下的活性层。

3. 发明申请

US20080128707A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080128707A1
公开(公告)日：2008-06-05
申请号：US11948330
申请日：2007-11-30
申请人： Kazuhiko Horino
发明人： Kazuhiko Horino
IPC分类号： H01L29/205 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576
摘要： A semiconductor device includes: an AlN layer provided on a substrate; a Si-doped GaN layer provided on the AlN layer; an undoped GaN layer provided on the Si-doped GaN layer; and an operation layer provided on the undoped GaN layer.
摘要翻译：半导体器件包括：设置在衬底上的AlN层; 设置在AlN层上的Si掺杂GaN层; 设置在Si掺杂GaN层上的未掺杂GaN层; 以及设置在未掺杂的GaN层上的工作层。

4. 发明授权

US06984840B2 Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element 有权
标题翻译：具有含有N作为V族元素的III-V族化合物半导体材料外延层的光学半导体器件
公开(公告)号：US06984840B2
公开(公告)日：2006-01-10
申请号：US09313764
申请日：1999-05-18
申请人： Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
发明人： Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01S5/0421 , H01S5/2205 , H01S5/2231 , H01S5/34333
摘要： An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlxGa1-xN, wherein the AlGaN buffer layer has a carrier density in the range between 3×1018–1×1020 cm−3, and the compositional parameter x is larger than 0 but smaller than 0.4 (0
摘要翻译：光学半导体器件包括具有n型导电性的SiC衬底和在SiC衬底上形成的具有n型导电性的AlGaN缓冲层，其组成表示为Al x Ga 1 -X N，其中所述AlGaN缓冲层的载流子浓度在3×10 18 -1×10 -3 cm -3 -3之间的范围内，，组成参数x大于0但小于0.4（0

5. 发明申请

US20080131987A1 METHOD FOR FABRICATING LIGHT-EMITTING DEVICE 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：US20080131987A1
公开(公告)日：2008-06-05
申请号：US11948394
申请日：2007-11-30
申请人： Kazuhiko Horino , Akito Kuramata , Hiroshi Yamamoto , Toshimitsu Kaneko
发明人： Kazuhiko Horino , Akito Kuramata , Hiroshi Yamamoto , Toshimitsu Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/007 , H01L33/20
摘要： A method for fabricating a light-emitting device includes: forming a first semiconductor layer on a substrate; foaming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer, the second semiconductor layer having a conduction type opposite to that of the first semiconductor layer; and forming a recess so as to be penetrated through up to the first semiconductor layer from the second semiconductor layer by a first etching; and forming an inversely tapered shape to an inner wall of the recess by a second etching using an etching solution.
摘要翻译：一种制造发光器件的方法包括：在衬底上形成第一半导体层; 在第一半导体层上起泡有源层; 在所述有源层上形成第二半导体层，所述第二半导体层具有与所述第一半导体层相反的导电类型; 以及形成凹槽，以便通过第一蚀刻从所述第二半导体层穿过所述第一半导体层; 并且通过使用蚀刻溶液的第二蚀刻，在凹部的内壁上形成反锥形的形状。

6. 发明申请

US20120024231A1 SEMICONDUCTOR GROWING APPARATUS 有权
标题翻译：半导体生长装置
公开(公告)号：US20120024231A1
公开(公告)日：2012-02-02
申请号：US13190710
申请日：2011-07-26
申请人： Kazuhiko Horino
发明人： Kazuhiko Horino
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , C30B25/12
摘要： A semiconductor growing apparatus including: susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor.
摘要翻译：一种半导体生长装置，包括：具有主面和侧面的基座，所述主面接收用于生长半导体层的基板，所述侧面具有凹槽; 用于加热基座的加热元件。

7. 发明授权

US06661822B1 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06661822B1
公开(公告)日：2003-12-09
申请号：US09544654
申请日：2000-04-05
申请人： Shinichi Kubota , Kazuhiko Horino , Akito Kuramata
发明人： Shinichi Kubota , Kazuhiko Horino , Akito Kuramata
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/021 , H01S5/0213 , H01S5/0655 , H01S5/221 , H01S5/2218 , H01S5/223 , H01S5/32341 , H01S5/34333
摘要： A lateral mode controlling layer made of AlN having a thickness of more than 0 nm but less than 300 nm is formed in at least one cladding layer of an n-type cladding layer and a p-type cladding layer or formed between the at least one cladding layer and the active layer. Also, a mask layer is formed on a substrate, then an AlN layer is formed to cover it, and then the AlN layer is lifted off by using a solution for etching. the mask layer. Accordingly, lateral mode control of the group III-V compound semiconductor laser can be facilitated, the aspect ratio of the beam shape can be improved, and the damage caused by the Al layer growth and the patterning can be reduced.
摘要翻译：在n型包层和p型包覆层的至少一个包覆层中形成厚度大于0nm但小于300nm的由AlN制成的横向模式控制层，或者形成在至少一个包层和有源层。此外，在基板上形成掩模层，然后形成AlN层以覆盖其，然后通过使用蚀刻溶液剥离AlN层。掩模层。因此，可以促进III-V族化合物半导体激光器的横向模式控制，可以提高光束形状的纵横比，并且可以降低由Al层生长和图案化引起的损伤。

8. 发明授权

US06606335B1 Semiconductor laser, semiconductor device, and their manufacture methods 有权
标题翻译：半导体激光器，半导体器件及其制造方法
公开(公告)号：US06606335B1
公开(公告)日：2003-08-12
申请号：US09743636
申请日：2001-01-12
申请人： Akito Kuramata , Kazuhiko Horino
发明人： Akito Kuramata , Kazuhiko Horino
IPC分类号： H01S500
CPC分类号： H01S5/32 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/32341 , H01S2304/12
摘要： A substrate is made of SiC. A plurality of AlxGa1−xN patterns (0≦x≦1) is formed on a surface of the substrate and dispersively distributed in an in-plane of the substrate. An AlyGa1−yN buffer layer (0≦y≦1) covers the surface of the substrate and the AlxGa1−xN patterns. A laser structure is formed on the AlyGa1−yN buffer layer. Since the AlGaN buffer layer is grown by using the AlGaN patterns as seed crystals, a dislocation density of a predetermined region in the AlGaN buffer layer can be lowered. The characteristics of a laser structure can be improved by forming the laser structure above the region having a low dislocation density. Since the AlGaN pattern has electric conductivity, the device resistance can be suppressed from being increased.
摘要翻译：衬底由SiC制成。在基板的表面上形成多个Al x Ga 1-x N图案（0 <= x <= 1），并且分散地分布在基板的平面内。 AlyGa1-yN缓冲层（0 <= y <= 1）覆盖衬底的表面和Al x Ga 1-x N图案。在AlyGa1-yN缓冲层上形成激光结构。由于通过使用AlGaN图案作为晶种生长AlGaN缓冲层，所以可以降低AlGaN缓冲层中的预定区域的位错密度。可以通过在低位错密度的区域上形成激光结构来改善激光器结构的特性。由于AlGaN图案具有导电性，所以可以抑制器件电阻的增加。

9. 发明授权

US6072197A Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy 失效
标题翻译：具有由具有单轴各向异性的半导体制成的有源层的半导体发光器件
公开(公告)号：US6072197A
公开(公告)日：2000-06-06
申请号：US805336
申请日：1997-02-24
申请人： Kazuhiko Horino , Kay Domen
发明人： Kazuhiko Horino , Kay Domen
IPC分类号： H01L27/15 , H01L33/16 , H01L33/24 , H01L33/32 , H01L33/62 , H01L33/00 , H01L29/04
CPC分类号： H01L33/32 , H01L24/48 , H01L24/49 , H01L27/153 , H01L27/156 , H01L33/16 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01L33/24 , H01L33/62
摘要： A semiconductor light emitting device includes a second semiconductor layer, an active layer, a third semiconductor layer and a pair of electrodes. The second semiconductor layer is formed directly on the principal pane of a substrate or via a first semiconductor layer. The active layer is formed on the second semiconductor layer and has an energy band gap which is smaller than the energy band gap of the second semiconductor layer. The active layer is made of a semiconductor having an uniaxial anisotropy. The third semiconductor layer is formed on the active layer and has the energy band gap which is larger than the energy band gap of the active layer. The pair of electrodes supplies current to the second semiconductor layer, the active layer, and the third semiconductor layer in the film thickness direction. The film thickness direction of at least the active layer is different from the axis of the uniaxial anisotropy.
摘要翻译：半导体发光器件包括第二半导体层，有源层，第三半导体层和一对电极。第二半导体层直接形成在基板的主窗格上或经由第一半导体层形成。有源层形成在第二半导体层上，其能带隙小于第二半导体层的能带隙。有源层由具有单轴各向异性的半导体制成。第三半导体层形成在有源层上，其能带隙大于有源层的能带隙。一对电极在膜厚度方向上向第二半导体层，有源层和第三半导体层提供电流。至少活性层的膜厚度方向与单轴各向异性轴不同。

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