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1. 发明授权

US08319549B2 Self-healing power amplifier: methods and apparatus 有权
标题翻译：自愈功率放大器：方法和装置
公开(公告)号：US08319549B2
公开(公告)日：2012-11-27
申请号：US12964281
申请日：2010-12-09
申请人： Kaushik Sengupta , Steven Bowers , Aydin Babakhani , Arthur H. Chang , Seyed Ali Hajimiri
发明人： Kaushik Sengupta , Steven Bowers , Aydin Babakhani , Arthur H. Chang , Seyed Ali Hajimiri
IPC分类号： H03F3/191
CPC分类号： H03F3/24 , H03F1/0266 , H03F1/0272 , H03F1/223 , H03F1/301 , H03F1/565 , H03F3/005 , H03F3/195 , H03F3/211 , H03F3/601 , H03F3/604 , H03F2200/105 , H03F2200/15 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2203/21106 , H03F2203/21142
摘要： An integrated power amplifier includes a divider and a combiner. The integrated power amplifier also includes two or more amplifiers. Each of the amplifier input terminals is electrically coupled to a divider output terminal and each of the amplifier output terminals is electrically coupled to a combiner input terminal. At least one power sensor is configured to provide a power amplifier performance metric. The divider and the combiner include a plurality of actuators. Each actuator has at least one actuator control terminal which is configured to provide an actuator setting. The actuators are configured via the actuator control terminals to optimize the power amplifier performance metric. Methods to simulate the operation of a self-healing power amplifier and a process for the operation of a self-healing circuit are also described.
摘要翻译：集成功率放大器包括分频器和组合器。集成功率放大器还包括两个或更多个放大器。每个放大器输入端子电耦合到分压器输出端子，并且每个放大器输出端子电耦合到组合器输入端子。至少一个功率传感器被配置成提供功率放大器性能度量。分隔器和组合器包括多个致动器。每个致动器具有至少一个致动器控制端子，其构造成提供致动器设定。执行器通过执行器控制端子进行配置，以优化功率放大器的性能指标。还描述了模拟自愈功率放大器的操作的方法和用于操作自愈电路的过程。

2. 发明授权

US08658976B2 Integrated terahertz imaging systems 有权
标题翻译：集成太赫兹成像系统
公开(公告)号：US08658976B2
公开(公告)日：2014-02-25
申请号：US13693025
申请日：2012-12-03
申请人： Kaushik Sengupta , Seyed Ali Hajimiri
发明人： Kaushik Sengupta , Seyed Ali Hajimiri
IPC分类号： G01J5/02
CPC分类号： H01L27/14609 , G01J5/0837 , G01N21/3581 , H01L27/14601 , H01L27/14649
摘要： A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.
摘要翻译：响应度大于2.5MV / W的低功率4×4像素的THz相机和0.25THz的10pW /√HzNEP集成在130nm硅中，而不使用高电阻率基板或硅透镜。完全集成的辐射CMOS电源的成像结果证明了第一个完全基于硅的THz成像器。

3. 发明申请

US20120212383A1 TRAVELLING WAVE DISTRIBUTED ACTIVE ANTENNA RADIATOR STRUCTURES, HIGH FREQUENCY POWER GENERATION AND QUASI-OPTICAL FILTERING 有权
标题翻译：行波分布式主动式天线散热器结构，高频发电和准光滤波
公开(公告)号：US20120212383A1
公开(公告)日：2012-08-23
申请号：US13282193
申请日：2011-10-26
申请人： Kaushik SENGUPTA , Seyed Ali Hajimiri
发明人： Kaushik SENGUPTA , Seyed Ali Hajimiri
IPC分类号： H01Q11/12
CPC分类号： H01Q1/2283 , H01Q9/04 , H01Q13/10 , H01Q23/00
摘要： An integrated distributed active radiator (DAR) device includes first and second conductors disposed adjacent to each other. The conductors define curves which close on themselves to within a distance of a gap. The first conductor first end is electrically coupled to the second conductor second end across the gap. The second conductor first end is electrically coupled to the first conductor second end across the gap. At least one active element is configured to produce a self-oscillation current at a frequency f0. The self-oscillation current has a first direction in the first conductor and a second direction in the second conductor. The DAR device is configured to generate a harmonic current which has the same direction in both conductors. The DAR device is configured to efficiently radiate electromagnetic energy at a harmonic frequency and to substantially inhibit the radiation of electromagnetic energy at the frequency f0.
摘要翻译：集成分布式有源辐射器（DAR）装置包括彼此相邻布置的第一和第二导体。导体定义了在间隙距离内自身闭合的曲线。第一导体第一端电连接到穿过间隙的第二导体第二端。第二导体第一端电连接到穿过间隙的第一导体第二端。至少一个有源元件被配置为以频率f0产生自振荡电流。自振荡电流在第一导体中具有第一方向，在第二导体中具有第二方向。 DAR器件被配置为产生在两个导体中具有相同方向的谐波电流。 DAR设备被配置为有效地辐射谐波频率的电磁能量并且基本上禁止在频率f0的电磁能量的辐射。

4. 发明授权

US10063191B2 Frequency and back-off reconfigurability in mm-wave power amplifiers 有权
公开(公告)号：US10063191B2
公开(公告)日：2018-08-28
申请号：US15469174
申请日：2017-03-24
申请人： Kaushik Sengupta , Chandrakanth Reddy Chappidi
发明人： Kaushik Sengupta , Chandrakanth Reddy Chappidi
IPC分类号： H03F1/26 , H03F1/56 , H03F3/21 , H03F3/19 , H01Q1/50 , H04B1/04
CPC分类号： H03F1/26 , H01Q1/50 , H03F1/22 , H03F1/565 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/387 , H03F2200/451 , H03F2203/21139 , H04B1/04
摘要： A power amplifier system for amplifying an input having a carrier frequency having an amplitude. The system includes a plurality of n amplifiers coupled to an asymmetrical combiner formed of a passive network, each amplifier has an input and an output, the asymmetrical combiner has a plurality of inputs and an output, the output of each amplifier is coupled to an input of the asymmetrical combiner, an impedance viewed at the output of each of the n amplifiers is a function of the amplitude and phase at each of the other n−1 amplifiers. An amplitude/phase controller is coupled to the plurality of n amplifiers or the asymmetrical combiner to control the amplitude/phase at the asymmetrical combiner input. The amplitude/phase controller is configured to present an amplitude/phase at each input of the asymmetrical combiner to target an optimal impedance at the carrier frequency for each of the plurality of n amplifiers.

5. 发明申请

US20170279414A1 FREQUENCY AND BACK-OFF RECONFIGURABILITY IN MM-WAVE POWER AMPLIFIERS 审中-公开
公开(公告)号：US20170279414A1
公开(公告)日：2017-09-28
申请号：US15469174
申请日：2017-03-24
申请人： Kaushik Sengupta , Chandrakanth Reddy Chappidi
发明人： Kaushik Sengupta , Chandrakanth Reddy Chappidi
IPC分类号： H03F1/26 , H01Q1/50 , H03F3/19 , H03F1/56 , H03F3/21
CPC分类号： H03F1/26 , H01Q1/50 , H03F1/22 , H03F1/565 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/387 , H03F2200/451 , H03F2203/21139 , H04B1/04
摘要： A power amplifier system for amplifying an input having a carrier frequency having an amplitude. The system includes a plurality of n amplifiers coupled to an asymmetrical combiner formed of a passive network, each amplifier has an input and an output, the asymmetrical combiner has a plurality of inputs and an output, the output of each amplifier is coupled to an input of the asymmetrical combiner, an impedance viewed at the output of each of the n amplifiers is a function of the amplitude and phase at each of the other n−1 amplifiers. An amplitude/phase controller is coupled to the plurality of n amplifiers or the asymmetrical combiner to control the amplitude/phase at the asymmetrical combiner input. The amplitude/phase controller is configured to present an amplitude/phase at each input of the asymmetrical combiner to target an optimal impedance at the carrier frequency for each of the plurality of n amplifiers.

6. 发明申请

US20140354350A1 SELF-HEALING TECHNIQUE FOR HIGH FREQUENCY CIRCUITS 有权
标题翻译：高频电路自愈技术
公开(公告)号：US20140354350A1
公开(公告)日：2014-12-04
申请号：US14176607
申请日：2014-02-10
申请人： Steven Bowers , Kaushik Sengupta , Kaushik Dasgupta , Seyed Ali Hajimiri
发明人： Steven Bowers , Kaushik Sengupta , Kaushik Dasgupta , Seyed Ali Hajimiri
IPC分类号： H03F1/30 , H03F3/213 , H03F3/195
CPC分类号： H03F3/213 , H01P1/127 , H03F1/0211 , H03F1/0261 , H03F1/301 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/318 , H03F2200/447 , H03F2200/451 , H03F2200/468 , H03H7/40
摘要： A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.
摘要翻译：自修复单片集成包括具有多个晶体管的电子电路。至少一个传感器设置在电子电路内并电耦合到电子电路并且被配置为感测电子电路的性能度量。多个致动器设置在电路内。多个致动器的每个致动器电连接到控制终端。多个致动器被配置为响应于以下之一的操作，执行将多个晶体管中的至少一个晶体管电耦合到电子电路中并电耦合至少一个晶体管中的至少一个晶体管，控制终端提高性能指标。

7. 发明授权

US08830137B2 Travelling wave distributed active antenna radiator structures, high frequency power generation and quasi-optical filtering 有权
标题翻译：行波分布式有源天线散热器结构，高频发电和准光滤波
公开(公告)号：US08830137B2
公开(公告)日：2014-09-09
申请号：US13282193
申请日：2011-10-26
申请人： Kaushik Sengupta , Seyed Ali Hajimiri
发明人： Kaushik Sengupta , Seyed Ali Hajimiri
IPC分类号： H01Q7/00
CPC分类号： H01Q1/2283 , H01Q9/04 , H01Q13/10 , H01Q23/00
摘要： An integrated distributed active radiator (DAR) device includes first and second conductors disposed adjacent to each other. The conductors define curves which close on themselves to within a distance of a gap. The first conductor first end is electrically coupled to the second conductor second end across the gap. The second conductor first end is electrically coupled to the first conductor second end across the gap. At least one active element is configured to produce a self-oscillation current at a frequency f0. The self-oscillation current has a first direction in the first conductor and a second direction in the second conductor. The DAR device is configured to generate a harmonic current which has the same direction in both conductors. The DAR device is configured to efficiently radiate electromagnetic energy at a harmonic frequency and to substantially inhibit the radiation of electromagnetic energy at the frequency f0.
摘要翻译：集成分布式有源辐射器（DAR）装置包括彼此相邻布置的第一和第二导体。导体定义了在间隙距离内自身闭合的曲线。第一导体第一端电连接到穿过间隙的第二导体第二端。第二导体第一端电连接到穿过间隙的第一导体第二端。至少一个有源元件被配置为以频率f0产生自振荡电流。自振荡电流在第一导体中具有第一方向，在第二导体中具有第二方向。 DAR器件被配置为产生在两个导体中具有相同方向的谐波电流。 DAR设备被配置为有效地辐射谐波频率的电磁能量并且基本上禁止在频率f0的电磁能量的辐射。

8. 发明申请

US20130193324A1 INTEGRATED TERAHERTZ IMAGING SYSTEMS 有权
标题翻译：集成的TERAHERTZ成像系统
公开(公告)号：US20130193324A1
公开(公告)日：2013-08-01
申请号：US13693025
申请日：2012-12-03
申请人： Kaushik Sengupta , Seyed Ali Hajimiri
发明人： Kaushik Sengupta , Seyed Ali Hajimiri
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , G01J5/0837 , G01N21/3581 , H01L27/14601 , H01L27/14649
摘要： A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.
摘要翻译：响应度大于2.5MV / W的低功率4×4像素的THz相机和0.25THz的10pW /√HzNEP集成在130nm硅中，而不使用高电阻率基板或硅透镜。完全集成的辐射CMOS电源的成像结果证明了第一个完全基于硅的THz成像器。

9. 发明申请

US20110140772A1 SELF-HEALING POWER AMPLIFIER: METHODS AND APPARATUS 有权
标题翻译：自我放大功率放大器：方法和设备
公开(公告)号：US20110140772A1
公开(公告)日：2011-06-16
申请号：US12964281
申请日：2010-12-09
申请人： Kaushik Sengupta , Steven Bowers , Aydin Babakhani , Arthur H. Chang , Seyed Ali Hajimiri
发明人： Kaushik Sengupta , Steven Bowers , Aydin Babakhani , Arthur H. Chang , Seyed Ali Hajimiri
IPC分类号： H03F3/68 , G06F17/50
CPC分类号： H03F3/24 , H03F1/0266 , H03F1/0272 , H03F1/223 , H03F1/301 , H03F1/565 , H03F3/005 , H03F3/195 , H03F3/211 , H03F3/601 , H03F3/604 , H03F2200/105 , H03F2200/15 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2203/21106 , H03F2203/21142
摘要： An integrated power amplifier includes a divider and a combiner. The integrated power amplifier also includes two or more amplifiers. Each of the amplifier input terminals is electrically coupled to a divider output terminal and each of the amplifier output terminals is electrically coupled to a combiner input terminal. At least one power sensor is configured to provide a power amplifier performance metric. The divider and the combiner include a plurality of actuators. Each actuator has at least one actuator control terminal which is configured to provide an actuator setting. The actuators are configured via the actuator control terminals to optimize the power amplifier performance metric. Methods to simulate the operation of a self-healing power amplifier and a process for the operation of a self-healing circuit are also described.
摘要翻译：集成功率放大器包括分频器和组合器。集成功率放大器还包括两个或更多个放大器。每个放大器输入端子电耦合到分压器输出端子，并且每个放大器输出端子电耦合到组合器输入端子。至少一个功率传感器被配置成提供功率放大器性能度量。分隔器和组合器包括多个致动器。每个致动器具有至少一个致动器控制端子，其构造成提供致动器设定。执行器通过执行器控制端子进行配置，以优化功率放大器的性能指标。还描述了模拟自愈功率放大器的操作的方法和用于操作自愈电路的过程。

10. 发明申请

US20110057712A1 SELF-HEALING TECHNIQUE FOR HIGH FREQUENCY CIRCUITS 审中-公开
标题翻译：高频电路自愈技术
公开(公告)号：US20110057712A1
公开(公告)日：2011-03-10
申请号：US12877743
申请日：2010-09-08
申请人： Steven Bowers , Kaushik Sengupta , Seyed Ali Hajimiri
发明人： Steven Bowers , Kaushik Sengupta , Seyed Ali Hajimiri
IPC分类号： H03K17/56
CPC分类号： H03F1/0211 , H01P1/127 , H03F1/0261 , H03F1/565 , H03F3/195 , H03F2200/318
摘要： A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.
摘要翻译：自修复单片集成包括具有多个晶体管的电子电路。至少一个传感器设置在电子电路内并电耦合到电子电路并且被配置为感测电子电路的性能度量。多个致动器设置在电路内。多个致动器的每个致动器电连接到控制终端。多个致动器被配置为响应于以下之一的操作，执行将多个晶体管中的至少一个晶体管电耦合到电子电路中并电耦合至少一个晶体管中的至少一个晶体管，控制终端提高性能指标。

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