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1. 外观设计

USD271670S Fire and smoke detector 失效
公开(公告)号：USD271670S
公开(公告)日：1983-12-06
申请号：US276321
申请日：1981-06-22
申请人： Nobuei Takai , Katsura Yamamoto
设计人： Nobuei Takai , Katsura Yamamoto

2. 外观设计

USD681091S1 Projector 有权
公开(公告)号：USD681091S1
公开(公告)日：2013-04-30
申请号：US29417702
申请日：2012-04-06
申请人： Akio Morita , Mitsuhiro Shimizu , Katsura Yamamoto
设计人： Akio Morita , Mitsuhiro Shimizu , Katsura Yamamoto

3. 发明授权

US4308531A Light transmission type smoke detector 失效
标题翻译：透光式烟雾探测器
公开(公告)号：US4308531A
公开(公告)日：1981-12-29
申请号：US206225
申请日：1980-11-12
申请人： Katsura Yamamoto
发明人： Katsura Yamamoto
IPC分类号： G01N21/59 , G08B17/10 , G08B17/103 , G08B29/04
CPC分类号： G08B29/04 , G08B17/103
摘要： A light transmission type smoke detector detecting smoke by sensing attenuation of light beam due to smoke is provided with a first voltage-holding circuit with a smaller time constant and a second voltage-holding circuit with a greater time constant both connected to a photoelectric transducer means; and an output from the photoelectric transducer means, which has sensed the light beam, charges the two voltage-holding circuits. When the photoelectric transducer means detects attenuation of the light beam by smoke, the first voltage-holding circuit holds the output voltage of the photoelectric transducer means for a relatively short time while the second voltage-holding circuit holds the output voltage for a relatively long time. The detector is further provided with a comparing circuit, which compares the output voltage of the first voltage-holding circuit and that of the second voltage-holding circuit and gives an alarm when the output of the first voltage-holding circuit falls lower than that of the second voltage-holding circuit. By means of the above-mentioned mechanism, the detector can compensate the effect of the slow attentuation of light beam caused by some factors other than smoke such as deterioration of the light source or light-receiving element and/or contamination of the optical system, and thus is prevented from mis-alarming.
摘要翻译：通过感测由于烟雾引起的光束的衰减来检测烟雾的透光型烟雾探测器设置有具有较小时间常数的第一保压电路和具有较大时间常数的第二保压电路，两者均连接到光电传感器装置 ; 并且已经感测到光束的光电传感器装置的输出对两个电压保持电路充电。当光电传感器装置检测到烟雾的光束的衰减时，第一保压电路在相对短的时间内保持光电传感器装置的输出电压，而第二保压电路将输出电压保持相对长的时间。该检测器还具有比较电路，比较第一保压电路的输出电压和第二保压电路的输出电压，当第一保压电路的输出低于第一保压电路的输出时，第二保压电路。通过上述机构，检测器可以补偿由诸如光源或光接收元件的劣化和/或光学系统的污染之类的烟雾以外的一些因素引起的光束的缓慢注意的影响，从而防止了误报。

4. 发明授权

US5938836A Apparatus and method for manufacturing semiconductor single crystals 失效
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：US5938836A
公开(公告)日：1999-08-17
申请号：US956434
申请日：1997-10-23
申请人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
发明人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
IPC分类号： C30B30/04 , C30B15/30 , H01L21/208 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1004
摘要： This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.
摘要翻译：本发明提供一种用于制造半导体单晶的装置和方法，其能够通过CZ方法辅助通过应用Cusp磁场在C单独晶体生长期间提升高质量单晶硅的稳定过程。三面体上的单极磁体（以下称为磁体）1,2和3设置在单晶提拉室的外侧。磁体3位于与石英坩埚5中储存的熔体6的熔融物6的自由表面相同的高度，作为储存在石英坩埚5中的熔体6的自由表面。此外，磁体3的强度设定得较弱磁体3的磁通线在水平方向基本上通过石英坩埚5。然而，磁体3的磁通线未到达上拉的单晶硅7。垂直于熔体6的自由表面的磁通线和晶体生长边界附近的磁场的强度降低。因此，可以使来自石英坩埚5的氧的量和从石英坩埚5向硅单晶开始的熔融物6的自由表面附近的对流最小化。

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