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1. 发明授权

US07585418B2 Lithographic mask and manufacturing method thereof 有权
标题翻译：平版印刷掩模及其制造方法
公开(公告)号：US07585418B2
公开(公告)日：2009-09-08
申请号：US11165536
申请日：2005-06-24
申请人： Junji Mori , Katsuhiro Takushima
发明人： Junji Mori , Katsuhiro Takushima
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： G03F1/32 , G03F1/82
摘要： Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.
摘要翻译：在半透明部分形成工艺中的抗蚀剂剥离和清洁步骤（步骤5）中使用硫酸型洗涤剂进行清洁，并且在屏蔽带形成过程中进行抗蚀剂剥离和清洁步骤（步骤10），并且将硫酸然后进行部分或全部除去吸附有硫酸根离子的图案中的表层部的除去工序，以有效地除去吸附的硫酸根离子。

2. 发明申请

US20060151008A1 Cleaning method, method for removing foreign particle, cleaning apparatus, and cleaning liquid 审中-公开
标题翻译：清洗方法，除去异物的方法，清洗装置和清洗液
公开(公告)号：US20060151008A1
公开(公告)日：2006-07-13
申请号：US10551135
申请日：2004-03-31
申请人： Katsuhiro Takushima
发明人： Katsuhiro Takushima
IPC分类号： B08B3/00 , B08B3/12
CPC分类号： H01L21/02052 , B08B7/0014 , C11D11/0047 , C11D11/0058 , G03F1/82
摘要： The present invention provides a mechanism capable of removing a minute particle adhered to a fine pattern or the like without giving damages to the pattern or the like. After being installed on a device which can perform rotating operation, the high viscosity liquid is dropped on an upper surface of an object such as a photomask to be cleaned by a liquid supply part, and then the photomask is rotated to move the high viscosity liquid. During the movement of the high viscosity liquid, a particle adhered to the object such as the photomask is contained in the high viscosity liquid, and is removed. Further, the particle thus contained in the liquid is prevented from re-adhering to the object such as the photomask by controlling a zeta potential of the high viscosity liquid, and is removed from the object such as the photomask.
摘要翻译：本发明提供了一种能够除去附着在微细图案等上的微小颗粒而不损害图案等的机构。在安装在能够进行旋转操作的装置上之后，将高粘度液体滴落在被液体供给部分清洁的光掩模等物体的上表面上，然后旋转光掩模以移动高粘度液体。在高粘度液体移动期间，粘附到诸如光掩模的物体的颗粒被包含在高粘度液体中，并被除去。此外，通过控制高粘度液体的ζ电位，防止如此包含在液体中的颗粒被再次粘附到诸如光掩模的物体，并且从诸如光掩模的物体中去除。

3. 发明申请

US20120156597A1 LITHOGRAPHIC MASK AND MANUFACTURING METHOD THEREOF 有权
标题翻译： LITHOGRAPHIC MASK及其制造方法
公开(公告)号：US20120156597A1
公开(公告)日：2012-06-21
申请号：US13402363
申请日：2012-02-22
申请人： Junji Mori , Katsuhiro Takushima
发明人： Junji Mori , Katsuhiro Takushima
IPC分类号： G03F1/82
CPC分类号： G03F1/32 , G03F1/82
摘要： Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.
摘要翻译：在半透明部分形成工艺中的抗蚀剂剥离和清洁步骤（步骤5）中使用硫酸型洗涤剂进行清洁，并且在屏蔽带形成过程中进行抗蚀剂剥离和清洁步骤（步骤10），并且将硫酸然后进行部分或全部除去吸附有硫酸根离子的图案中的表层部的除去工序，以有效地除去吸附的硫酸根离子。

4. 发明授权

US08263294B2 Lithographic mask and manufacturing method thereof 有权
标题翻译：平版印刷掩模及其制造方法
公开(公告)号：US08263294B2
公开(公告)日：2012-09-11
申请号：US12511415
申请日：2009-07-29
申请人： Junji Mori , Katsuhiro Takushima
发明人： Junji Mori , Katsuhiro Takushima
IPC分类号： G03F1/68 , G03F1/82
CPC分类号： G03F1/32 , G03F1/82
摘要： Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.
摘要翻译：在半透明部分形成工艺中的抗蚀剂剥离和清洁步骤（步骤5）中使用硫酸型洗涤剂进行清洁，并且在屏蔽带形成过程中进行抗蚀剂剥离和清洁步骤（步骤10），并且将硫酸然后进行部分或全部除去吸附有硫酸根离子的图案中的表层部的除去工序，以有效地除去吸附的硫酸根离子。

5. 发明申请

US20070287077A1 Photomask and exposure method 有权
标题翻译：光掩模和曝光方法
公开(公告)号：US20070287077A1
公开(公告)日：2007-12-13
申请号：US11802005
申请日：2007-05-18
申请人： Katsuhiro Takushima , Takashi Yasui
发明人： Katsuhiro Takushima , Takashi Yasui
IPC分类号： A47G1/12 , G03F1/14 , G03F1/00
CPC分类号： G03F1/64 , G03F1/62
摘要： To provide a photomask capable of preventing a foreign matter generation in using the photomask, and an exposure method using this photomask. The photomask includes a transparent substrate 2; a transfer pattern 4 formed in a main region 3 of a center portion of the transparent substrate 2; a light-shading band region 5 provided adjacent to the main region 3 in the outer peripheral region of the main region 3; and a pellicle 6 formed by adhering a pellicle film 6a to a pellicle frame 6b by an adhesive 8a, wherein this pellicle 6 is adhered onto a light-shading region 7 consisting of a light-shading film formed in the outer peripheral region of the main region 3, through an adhesive 8b.
摘要翻译：提供能够防止在使用光掩模中产生异物的光掩模和使用该光掩模的曝光方法。光掩模包括透明基板2; 形成在透明基板2的中心部分的主区域3中的转印图案4; 在主区域3的外周区域中与主区域3相邻设置的遮光带区域5; 以及通过粘合剂8a将防护薄膜6a粘附在防护薄膜组件6b上形成的防护薄膜组件6，其中该防护薄膜组件6粘附在由形成在外围区域中的遮光膜构成的遮光区域7上的主区域3，通过粘合剂8b。

6. 发明授权

US08535856B2 Lithographic mask and manufacturing method thereof 有权
公开(公告)号：US08535856B2
公开(公告)日：2013-09-17
申请号：US13402363
申请日：2012-02-22
申请人： Junji Mori , Katsuhiro Takushima
发明人： Junji Mori , Katsuhiro Takushima
IPC分类号： G03F1/68 , G03F1/82
CPC分类号： G03F1/32 , G03F1/82
摘要： Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

7. 发明申请

US20060019177A1 Lithographic mask and manufacturing method thereof 有权
标题翻译：平版印刷掩模及其制造方法
公开(公告)号：US20060019177A1
公开(公告)日：2006-01-26
申请号：US11165536
申请日：2005-06-24
申请人： Junji Mori , Katsuhiro Takushima
发明人： Junji Mori , Katsuhiro Takushima
IPC分类号： G03C5/00 , C03C25/68 , G03F1/00
CPC分类号： G03F1/32 , G03F1/82
摘要： Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.
摘要翻译：在半透明部分形成工艺中的抗蚀剂剥离和清洁步骤（步骤5）中使用硫酸型洗涤剂进行清洁，并且在屏蔽带形成过程中进行抗蚀剂剥离和清洁步骤（步骤10），并且将硫酸然后进行部分或全部除去吸附有硫酸根离子的图案中的表层部的除去工序，以有效地除去吸附的硫酸根离子。

8. 发明授权

US06800214B2 Method for correcting characteristics of attenuated phase-shift mask 失效
标题翻译：用于校正衰减相移掩模特性的方法
公开(公告)号：US06800214B2
公开(公告)日：2004-10-05
申请号：US10300777
申请日：2002-11-21
申请人： Katsuhiro Takushima
发明人： Katsuhiro Takushima
IPC分类号： B44C122
CPC分类号： G03F1/32 , G03F1/72
摘要： A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.
摘要翻译：一种用于校正具有衰减层的衰减相移掩模的特性的方法，包括：（a）将数据存储在存储器中，其示出特性和处理条件之间的相关性，（b）测量衰减的相移掩模的特性（c）从步骤（b）的结果和存储在存储器中的数据计算适当的处理条件; 和（d）将衰减的相移掩模浸泡在液体溶液中一定时间 - 这在步骤（c）中计算，以改变衰减层的厚度和组成。

9. 发明授权

US06508949B1 Method for correcting characteristics of attenuated phase-shift mask 失效
标题翻译：用于校正衰减相移掩模特性的方法
公开(公告)号：US06508949B1
公开(公告)日：2003-01-21
申请号：US09618641
申请日：2000-07-18
申请人： Katsuhiro Takushima
发明人： Katsuhiro Takushima
IPC分类号： C03B100
CPC分类号： G03F1/32 , G03F1/72
摘要： A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.
摘要翻译：一种用于校正具有衰减层的衰减相移掩模的特性的方法，包括：（a）将数据存储在存储器中，其示出特性和处理条件之间的相关性，（b）测量衰减的相移掩模的特性（c）从步骤（b）的结果和存储在存储器中的数据计算适当的处理条件; 和（d）将衰减的相移掩模浸泡在液体溶液中一段时间，其在步骤（c）中计算，以改变衰减层的厚度和组成。

10. 发明授权

US08067132B2 Photomask and exposure method 有权
标题翻译：光掩模和曝光方法
公开(公告)号：US08067132B2
公开(公告)日：2011-11-29
申请号：US11802005
申请日：2007-05-18
申请人： Katsuhiro Takushima , Takashi Yasui
发明人： Katsuhiro Takushima , Takashi Yasui
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/64 , G03F1/62
摘要： To provide a photomask capable of preventing a foreign matter generation in using the photomask, and an exposure method using this photomask. The photomask includes a transparent substrate 2; a transfer pattern 4 formed in a main region 3 of a center portion of the transparent substrate 2; a light-shading band region 5 provided adjacent to the main region 3 in the outer peripheral region of the main region 3; and a pellicle 6 formed by adhering a pellicle film 6a to a pellicle frame 6b by an adhesive 8a, wherein this pellicle 6 is adhered onto a light-shading region 7 consisting of a light-shading film formed in the outer peripheral region of the main region 3, through an adhesive 8b.
摘要翻译：提供能够防止在使用光掩模中产生异物的光掩模和使用该光掩模的曝光方法。光掩模包括透明基板2; 形成在透明基板2的中心部分的主区域3中的转印图案4; 在主区域3的外周区域中与主区域3相邻设置的遮光带区域5; 以及通过粘合剂8a将防护薄膜6a粘接到防护薄膜框架6b上形成的防护薄膜组件6，其中该防护薄膜组件6粘附到由形成在主体的外围区域中的遮光膜构成的遮光区域7上区域3，通过粘合剂8b。

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