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1. 发明申请

US20220077355A1 Solid-state light source 有权
公开(公告)号：US20220077355A1
公开(公告)日：2022-03-10
申请号：US12924479
申请日：2010-09-27
申请人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay
发明人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay
IPC分类号： H01L33/50 , H01L33/42
摘要： A solid-state light source contains light emitting diodes. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. Both substantially parallel and orthogonal mounting configurations are used for the light emitting diodes. Orthogonal mounting or rib emitter is a preferred embodiment. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. Methods, equipment, and articles can be used to fabricate the solid-state light sources, freestanding foil based light emitting diodes, and wavelength conversion materials.

2. 发明申请

US20140362563A1 Fixtures for large area directional and isotropic solid state lighting panels 审中-公开
标题翻译：大面积定向和各向同性固态照明面板的夹具
公开(公告)号：US20140362563A1
公开(公告)日：2014-12-11
申请号：US13986793
申请日：2013-06-05
申请人： Scott M. Zimmerman , William R. Livesay , Richard L. Boss , Eduardo DeAnda , Chad R. Livesay , Karl W. Beeson
发明人： Scott M. Zimmerman , William R. Livesay , Richard L. Boss , Eduardo DeAnda , Chad R. Livesay , Karl W. Beeson
IPC分类号： F21V29/00
CPC分类号： F21S8/061 , E04B9/006 , E04B9/241 , E04B9/28 , F21K9/20 , F21K9/68 , F21K9/69 , F21S8/026 , F21V33/006
摘要： Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source.
摘要翻译：用于大面积面板光源的反射器设计产生与面板光源相邻的感应通风冷却装置。面板光源在固态光源上具有用于发射第一和第二波长的光的波长转换元件，以形成来自面板光源的较宽的光发射光谱。

3. 发明申请

US20140153227A1 FIXTURES FOR LARGE AREA DIRECTIONAL AND ISOTROPIC SOLID STATE LIGHTING PANELS 有权
公开(公告)号：US20140153227A1
公开(公告)日：2014-06-05
申请号：US14020892
申请日：2013-09-08
申请人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Ross
发明人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Ross
IPC分类号： F21V13/08 , F21S9/03 , F21V21/096 , F21V7/20 , F21V9/08
CPC分类号： F21V13/08 , F21K9/00 , F21K9/64 , F21K9/68 , F21S9/02 , F21S9/03 , F21V9/08 , F21V21/096 , F21V29/505 , F21V29/51 , F21V29/54 , F21V29/83 , H01L33/507 , H01L33/60 , H01L33/642 , H01L33/648 , H01L2924/0002 , Y02B10/10 , H01L2924/00
摘要： Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source.

4. 发明授权

US08723184B2 Semiconducting sheet 有权
标题翻译：半导体片
公开(公告)号：US08723184B2
公开(公告)日：2014-05-13
申请号：US13506382
申请日：2012-04-16
申请人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay , Richard L. Ross
发明人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay , Richard L. Ross
IPC分类号： H01L33/00 , H01L31/101
CPC分类号： H01L25/0753 , H01L31/042 , H01L33/54 , H01L33/62 , H01L2224/48091 , Y02E10/50 , H01L2924/00014
摘要： A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.
摘要翻译：无衬底的半导体片材具有分散在基体材料中的半导体元件阵列。基体材料结合到半导体元件的边缘表面，并且无衬底的半导体片材具有与半导体元件基本相同的厚度。

5. 发明授权

US08410511B2 Methods for high temperature processing of epitaxial chips 有权
标题翻译：外延芯片的高温处理方法
公开(公告)号：US08410511B2
公开(公告)日：2013-04-02
申请号：US12589056
申请日：2009-10-16
申请人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
发明人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
IPC分类号： H01L29/22 , H01L21/20
CPC分类号： H01L33/32 , H01L31/0236 , H01L31/052 , H01L31/054 , H01L31/056 , H01L31/0687 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.
摘要翻译：独立外延芯片中的高温半导体材料可以使用高温互连和接合材料。可以使用在大于400摄氏度的温度下固化，起火，钎焊或熔化的工艺材料。这些材料包括但不限于钎焊合金，激光焊接，高温陶瓷和玻璃。高温互连和接合材料还可以呈现折射率中间到独立外延芯片及其周围矩阵的折射率。高折射率低熔点玻璃提供了半导体器件的气密密封，并且还具有与独立外延芯片匹配的指标，从而提高了提取效率。以这种方式，可以产生各种有机自由半导体器件，例如固体照明源，其表现出优异的寿命，效率和环境稳定性。

6. 发明申请

US20120205683A1 Semiconducting sheet 有权
公开(公告)号：US20120205683A1
公开(公告)日：2012-08-16
申请号：US13506383
申请日：2012-04-16
申请人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay , Richard L. Ross
发明人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay , Richard L. Ross
IPC分类号： H01L33/08 , H01L31/18 , H01L31/0232 , H01L21/30
CPC分类号： H01L25/0753 , H01L31/042 , H01L33/54 , H01L33/62 , H01L2224/48091 , Y02E10/50 , H01L2924/00014
摘要： A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

7. 发明授权

US08017415B2 Dual sided processing and devices based on freestanding nitride and zinc oxide films 有权
标题翻译：双面加工和基于独立氮化物和氧化锌薄膜的设备
公开(公告)号：US08017415B2
公开(公告)日：2011-09-13
申请号：US12590196
申请日：2009-11-04
申请人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
发明人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02403 , H01L21/02521 , H01L31/06 , H01L33/0075 , H01L2224/13 , H01L2924/1461 , H01L2924/00
摘要： Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.
摘要翻译：薄的独立氮化物膜用作生长衬底以增强基于氮化物的器件的光学，电学，机械和迁移率，并且能够使用厚的透明导电氧化物。可以在独立的氮化物膜上制造诸如LED，激光二极管，太阳能电池，生物医学装置，热电和其它光电子器件的光电子器件。独立氮化物膜的折射率可以通过合金成分进行控制。导光或光提取光学元件可以基于具有或不具有层的独立的氮化物膜形成。通过使用这些独立的氮化物膜可实现双面处理。这使得能够为发光器件提供更有效的输出，并且为太阳能电池提供更有效的能量转换。

8. 发明申请

US20100308361A1 Wavelength conversion chip for use with light emitting diodes and method for making same 有权
标题翻译：用于发光二极管的波长转换芯片及其制造方法
公开(公告)号：US20100308361A1
公开(公告)日：2010-12-09
申请号：US12806484
申请日：2010-08-12
申请人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay
发明人： Karl W. Beeson , Scott M. Zimmerman , William R. Livesay
IPC分类号： H01L33/50
CPC分类号： H05B33/10 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.
摘要翻译：通过在衬底上沉积波长转换材料以形成层，从衬底去除所得到的波长转换层，然后将波长转换层分割成多个波长转换芯片，形成波长转换芯片。波长转换材料可以通过热退火或辐射退火进行退火，以提高芯片的波长转换效率或烧结波长转换材料以形成陶瓷材料。可以在波长转换芯片上制造光学涂层，通孔，光提取元件，电连接或电接合焊盘。

9. 发明申请

US20090140279A1 Substrate-free light emitting diode chip 审中-公开
标题翻译：无基板的发光二极管芯片
公开(公告)号：US20090140279A1
公开(公告)日：2009-06-04
申请号：US12221304
申请日：2008-07-31
申请人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Ross
发明人： Scott M. Zimmerman , Karl W. Beeson , William R. Livesay , Richard L. Ross
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/32 , H01L33/42 , H01L33/508 , H01L33/62 , H01L33/648 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy.
摘要翻译：发光二极管（LED）芯片具有至少10微米厚的多层半导体结构，并且不需要附着的生长衬底或转移衬底用于结构刚性或支撑。多层半导体结构包括第一掺杂层，第二掺杂层和介于第一掺杂层和第二掺杂层之间的有源区。可选地，多层半导体结构包括未掺杂层。多层半导体结构的至少一层是至少5微米厚，优选通过氢化物气相外延沉积。

10. 发明申请

US20080170413A1 Side emitting illumination systems incorporating light emitting diodes 审中-公开
标题翻译：包含发光二极管的侧面发射照明系统
公开(公告)号：US20080170413A1
公开(公告)日：2008-07-17
申请号：US11983441
申请日：2007-11-09
申请人： Karl W. Beeson , Scott M. Zimmerman
发明人： Karl W. Beeson , Scott M. Zimmerman
IPC分类号： F21V7/04
CPC分类号： G02F1/133603 , G02F2001/133614 , H01L25/0753 , H01L33/60 , H01L2924/0002 , Y10S362/80 , H01L2924/00
摘要： The invention is a reflective light emitting diode. The light emitting diode reflects the externally incident light, thereby increasing the effective brightness of the light emitting diode. The light emitting diode reflects externally incident light with a reflectivity greater than 40 percent.
摘要翻译：本发明是一种反射式发光二极管。发光二极管反射外部入射光，从而增加发光二极管的有效亮度。发光二极管反射反射率大于40％的外部入射光。

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