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1. 发明申请

WO2008013959A2 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 审中-公开
标题翻译：用于形成纳米结构单层的方法和装置和包括这种单层的装置
公开(公告)号：WO2008013959A2
公开(公告)日：2008-01-31
申请号：PCT/US2007016948
申请日：2007-07-27
申请人： NANOSYS INC , NALLABOLU MADHURI L , LIU CHAO , DUAN XIANGFENG , CHEN JIAN , PARCE J WALLACE , CRUDEN KAREN CHU , RANGANATHAN SRIKANTH
发明人： NALLABOLU MADHURI L , LIU CHAO , DUAN XIANGFENG , CHEN JIAN , PARCE J WALLACE , CRUDEN KAREN CHU , RANGANATHAN SRIKANTH
IPC分类号： H01L21/31 , H01L21/28 , H01L21/82 , H01L27/10 , H01L29/739
CPC分类号： H01L21/28008 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28229 , H01L21/28273 , H01L21/3105 , Y10S977/774 , Y10S977/782 , Y10S977/845 , Y10S977/855 , Y10S977/89 , Y10S977/891
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。还提供了在高温处理过程中保护纳米结构不熔化的方法。

2. 发明申请

WO2005122235A2 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 审中-公开
标题翻译：用于形成纳米结构单层的方法和装置和包括这种单层的装置
公开(公告)号：WO2005122235A2
公开(公告)日：2005-12-22
申请号：PCT/US2005/020104
申请日：2005-06-07
申请人： NANOSYS, INC. , HEALD, David, L. , CRUDEN, Karen, Chu , DUAN, Xiangfeng , LIU, Chao , PARCE, J., Wallace
发明人： HEALD, David, L. , CRUDEN, Karen, Chu , DUAN, Xiangfeng , LIU, Chao , PARCE, J., Wallace
IPC分类号： H01L21/469
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of a arrays on coatings comprising nanostructure association groups, pattering using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂图案和/或使用便于阵列形成的装置。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

3. 发明申请

WO2008013959A3 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 审中-公开
公开(公告)号：WO2008013959A3
公开(公告)日：2008-01-31
申请号：PCT/US2007/016948
申请日：2007-07-27
申请人： NANOSYS, INC. , NALLABOLU, Madhuri, L. , LIU, Chao , DUAN, Xiangfeng , CHEN, Jian , PARCE, J., Wallace , CRUDEN, Karen, Chu , RANGANATHAN, Srikanth
发明人： NALLABOLU, Madhuri, L. , LIU, Chao , DUAN, Xiangfeng , CHEN, Jian , PARCE, J., Wallace , CRUDEN, Karen, Chu , RANGANATHAN, Srikanth
IPC分类号： H01L21/82 , H01L27/10 , H01L29/739
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.

4. 发明申请

WO2005122235A3 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 审中-公开
标题翻译：用于形成纳米结构单层的方法和装置和包括这种单层的装置
公开(公告)号：WO2005122235A3
公开(公告)日：2007-06-21
申请号：PCT/US2005020104
申请日：2005-06-07
申请人： NANOSYS INC , HEALD DAVID L , CRUDEN KAREN CHU , DUAN XIANGFENG , LIU CHAO , PARCE J WALLACE
发明人： HEALD DAVID L , CRUDEN KAREN CHU , DUAN XIANGFENG , LIU CHAO , PARCE J WALLACE
IPC分类号： H01L21/31 , G03F7/075 , G11C13/00 , H01L21/28 , H01L21/312 , H01L21/469 , H01L21/82 , H01L27/10 , H01L29/739
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of a arrays on coatings comprising nanostructure association groups, pattering using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂图案和/或使用便于阵列形成的装置。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

5. 发明申请

US20090065764A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
标题翻译：用于形成纳米结构单层的方法和装置以及包括这种单层的装置
公开(公告)号：US20090065764A1
公开(公告)日：2009-03-12
申请号：US12291101
申请日：2008-11-05
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L29/00 , H01L29/06
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

6. 发明申请

US20070166284A1 THERAPEUTIC REGIMEN FOR TREATING CANCER 审中-公开
标题翻译：治疗癌症的治疗方案
公开(公告)号：US20070166284A1
公开(公告)日：2007-07-19
申请号：US11695437
申请日：2007-04-02
申请人： Henrik Rasmussen , Karen Chu
发明人： Henrik Rasmussen , Karen Chu
IPC分类号： A61K48/00 , C12N15/861
CPC分类号： A61K35/761 , A61K38/191 , C12N2710/10332 , C12N2710/10341 , A61K2300/00
摘要： The invention provides a method for treating cancer in a human comprising administering to the human a dose of a pharmaceutical composition comprising (i) a pharmaceutically acceptable carrier and (ii) an adenoviral vector comprising a nucleic acid sequence encoding TNF-α operably linked to a promoter, wherein the dose comprises about 1×107 to about 4×1012 particle units (pu) of replication-deficient adenoviral vector, at least once in a therapeutic period comprising up to 10 weeks, whereby the cancer in human is treated. The invention further provides a method of treating a human for multiple tumors, wherein the method comprises contacting a first tumor with a dose of the pharmaceutical composition at least once in a therapeutic period comprising up to about 10 weeks, whereby the human is treated for the first tumor and one or more additional tumors.
摘要翻译：本发明提供了一种治疗人类癌症的方法，包括向人施用剂量的药物组合物，其包含（i）药学上可接受的载体和（ii）腺病毒载体，其包含编码与α-α可操作地连接的TNF-α的核酸序列启动子，其中所述剂量包含约1×10 7个至约4×10 12个复制缺陷型腺病毒载体的颗粒单位（pu），在治疗期至少一次包括至多10 周，其中治疗人类的癌症。本发明进一步提供了治疗多种肿瘤的方法，其中所述方法包括使第一肿瘤与一定剂量的药物组合物在至多约10周的治疗期内至少接触一次，由此将该人治疗为第一肿瘤和一个或多个另外的肿瘤。

7. 发明授权

US06797642B1 Method to improve barrier layer adhesion 失效
标题翻译：改善阻隔层粘附性的方法
公开(公告)号：US06797642B1
公开(公告)日：2004-09-28
申请号：US10267305
申请日：2002-10-08
申请人： Karen Chu , Anil Vijayendran , Michal Danek
发明人： Karen Chu , Anil Vijayendran , Michal Danek
IPC分类号： H01L2131
CPC分类号： H01L21/76844 , C23C14/5826 , C23C16/56 , H01L21/76805 , H01L21/76814 , H01L21/76862
摘要： The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded with a plasma to effectively push the barrier material into the dielectric interface while leaving a portion of the barrier material over the dielectric. A second barrier material, which may or may not be the same as the first barrier material, is then formed on the remaining first barrier material. Advantageously, the method of the present invention allows the barrier material to be pushed into the dielectric to insure excellent adhesion, which prevents chemical mechanical polishing delamination. Furthermore, the presence of the first barrier material on the sidewalls of via apertures through the dielectric can prevent Cu poisoning from sputtered Cu or CxOy.
摘要翻译：本发明提供了改善阻挡层，金属，电介质界面的附着力的方法。在工艺流程中，第一阻挡材料形成在电介质层上并用等离子体轰击以有效地将阻挡材料推入电介质界面，同时将阻挡材料的一部分留在电介质上。然后可以在剩余的第一阻挡材料上形成第二阻挡材料，其可以或可以不与第一阻挡材料相同。有利地，本发明的方法允许阻挡材料被推入电介质以确保优异的粘附性，这防止了化学机械抛光分层。此外，通过电介质的通孔的侧壁上的第一阻挡材料的存在可以防止溅射的Cu或C x O y的Cu中毒。

8. 发明授权

US08143703B2 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
标题翻译：用于形成纳米结构单层的方法和装置以及包括这种单层的装置
公开(公告)号：US08143703B2
公开(公告)日：2012-03-27
申请号：US12291101
申请日：2008-11-05
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L29/06
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

9. 发明申请

US20100155786A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
标题翻译：用于形成纳米结构单层的方法和装置以及包括这种单层的装置
公开(公告)号：US20100155786A1
公开(公告)日：2010-06-24
申请号：US11881739
申请日：2007-07-27
申请人： David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
发明人： David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
IPC分类号： H01L29/772 , H01L21/302 , H01L21/31
CPC分类号： H01L29/66477 , B82Y10/00 , B82Y30/00 , G03F7/0754 , G03F7/165 , G03F7/168 , H01L21/28273 , H01L21/823437 , H01L21/823828 , H01L29/42332 , H01L29/78
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。还提供了在高温处理过程中保护纳米结构不熔化的方法。

10. 发明授权

US07501315B2 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
公开(公告)号：US07501315B2
公开(公告)日：2009-03-10
申请号：US11148001
申请日：2005-06-07
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L21/82 , H01L27/10
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

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