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    • 1. 发明授权
    • Process for forming and acoustically connecting structures on a substrate
    • 用于在基底上形成和声学连接结构的方法
    • US07049051B2
    • 2006-05-23
    • US10349618
    • 2003-01-23
    • Kaigham J. GabrielXu Zhu
    • Kaigham J. GabrielXu Zhu
    • G03C5/00
    • B81C1/00158A61K8/0208A61K2800/33A61K2800/58A61K2800/72A61K2800/75A61K2800/94B81B2201/0257H04R19/005
    • The present invention describes a processes that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plate RIE dry etch processes, advanced deep and inductively coupled plasma RIE processes. Three embodiments for connecting the chamber to the cavity from the top side of the substrate, e.g. by using pilot openings formed using at least a portion of the mesh as an etch mask, by forming the vent openings using at least a portion of the mesh as an etch mask, or by having the chamber intersect the vent openings as the chamber is being formed, illustrate how the disclosed process may be modified. By forming the cavity on the back side of the substrate, the depth of the vent holes is decreased. Additionally, using at least a portion of the micro-machined mesh as an etch mask for the vent holes makes the process self-aligning.
    • 本发明描述了构建声腔,腔室和用于将腔室与声腔声学连接的通气孔的方法。 干蚀刻工艺可以包括反应离子蚀刻,其包括传统的平行板RIE干蚀刻工艺,先进的深度和电感耦合等离子体RIE工艺。 用于将腔室从衬底的顶侧连接到空腔的三个实施例,例如, 通过使用使用网的至少一部分形成的导向开口作为蚀刻掩模,通过使用网状物的至少一部分作为蚀刻掩模形成通气孔,或者当腔室与腔室相交时,使腔室与通气孔相交 形成,说明如何修改公开的过程。 通过在基板的背面形成空腔,通气孔的深度减小。 此外,使用至少一部分微机加工的网格作为通气孔的蚀刻掩模使得该工艺自对准。
    • 4. 发明授权
    • Proof-mass with supporting structure on integrated circuit-MEMS platform
    • 在集成电路MEMS平台上具有支撑结构的质量
    • US07640805B2
    • 2010-01-05
    • US11640345
    • 2006-12-18
    • Brett M. DiamondMatthew A. ZeleznikJan E. VandemeerKaigham J. Gabriel
    • Brett M. DiamondMatthew A. ZeleznikJan E. VandemeerKaigham J. Gabriel
    • G01P15/125
    • B81C1/00246B81C2203/0742
    • Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.
    • 提供了一种包括基板的微机电系统(MEMS)装置; 设置在所述基板上的至少一个半导体层; 电路区域,包括至少一个包含驱动/感测电路的芯片,所述电路区域设置在所述至少一个半导体层上; 附着在基板上的支撑结构; 连接到所述支撑结构的至少一个弹性装置; 由所述至少一个弹性装置悬挂的自由移动的x,y和z方向中的至少一个; 设置在所述至少一个弹性装置上的至少一个顶部电极; 以及位于所述至少一个弹性装置下方的至少一个底部电极,使得在所述至少一个顶部和底部电极之间产生初始电容,其中所述驱动/感测电路,证明质量,支撑结构和所述至少一个 在至少一个半导体层上制造顶部和底部电极。
    • 5. 发明申请
    • Proof-mass with supporting structure on integrated circuit-MEMS platform and method of fabricating the same
    • 集成电路MEMS平台上的支撑结构的证明质量及其制造方法
    • US20080142914A1
    • 2008-06-19
    • US11640345
    • 2006-12-18
    • Brett M. DiamondMatthew A. ZeleznikJan E. VandemeerKaigham J. Gabriel
    • Brett M. DiamondMatthew A. ZeleznikJan E. VandemeerKaigham J. Gabriel
    • H01L29/84
    • B81C1/00246B81C2203/0742
    • Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.
    • 提供了一种包括基板的微机电系统(MEMS)装置; 设置在所述基板上的至少一个半导体层; 电路区域,包括至少一个包含驱动/感测电路的芯片,所述电路区域设置在所述至少一个半导体层上; 附着在基板上的支撑结构; 连接到所述支撑结构的至少一个弹性装置; 由所述至少一个弹性装置悬挂的自由移动的x,y和z方向中的至少一个; 设置在所述至少一个弹性装置上的至少一个顶部电极; 以及位于所述至少一个弹性装置下方的至少一个底部电极,使得在所述至少一个顶部和底部电极之间产生初始电容,其中所述驱动/感测电路,证明质量,支撑结构和所述至少一个 在至少一个半导体层上制造顶部和底部电极。
    • 6. 发明授权
    • Multi-metal layer MEMS structure and process for making the same
    • 多金属层MEMS结构和制造过程相同
    • US06943448B2
    • 2005-09-13
    • US10349619
    • 2003-01-23
    • Kaigham J. GabrielXu Zhu
    • Kaigham J. GabrielXu Zhu
    • B81B3/00B81C1/00C23F1/00H01G4/00H01G5/00H01G7/00H01G9/00H01G13/00H01H59/00H01L23/48H01L23/52H04R19/00H04R19/02H04R19/04H04R31/00
    • B81C1/00158B81B2201/018B81B2201/0257B81C2201/0109H01G5/16
    • The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.
    • 本发明涉及由使用标准CMOS处理技术构建的金属和牺牲材料的交替层的结构,用于构建这种结构的工艺,用于从这种结构制造器件的工艺以及由这样的器件制造的器件 结构体。 在一个实施例中,第一金属层由衬底承载。 第一牺牲层由第一金属层承载。 第二金属层由牺牲层承载。 第二金属层具有形成微加工金属网的部分。 当去除微加工金属网的区域中的第一牺牲层的部分时,微加工金属网被释放并悬浮在第一金属层上方的高度由第一牺牲层的厚度确定。 可以通过在衬底的表面和第一金属层之间提供牺牲材料的基底层来改变结构。 以这种方式,第一金属层的一部分可以形成微机加工的网,其在微加工网的区域中的部分基底牺牲层被去除时释放。 另外,可以提供第二层牺牲材料和第三金属层。 微加工网可以形成在第三金属层的一部分中。 本发明的结构可用于构造可变电容器,开关,并且当确定的网孔被密封时,微型扬声器和麦克风。