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1. 发明授权

US08299395B2 Laser marking machine 有权
标题翻译：激光打标机
公开(公告)号：US08299395B2
公开(公告)日：2012-10-30
申请号：US12912774
申请日：2010-10-27
申请人： Kuo-Chang Yang , Song-Ya Chen , Dong-Wei Zhao , Qun-Fang Chen
发明人： Kuo-Chang Yang , Song-Ya Chen , Dong-Wei Zhao , Qun-Fang Chen
IPC分类号： B23K26/00
CPC分类号： B23K37/0408 , B23K26/355 , B23K26/702
摘要： A laser marking machine includes a support portion, a laser marking device fixed on the support portion, a control chip and a fixing mechanism fixed on the support portion. The fixing mechanism includes a support board configured for supporting a workpiece, and four positioning blocks moved, and four motors being able to control the four positioning blocks to slide in the support board. The fixing mechanism further includes at least two position detectors. The two position detectors are able to position detector a distance data of the workpiece deviating from a center of the support board along X and Y axes, and transmit the distance data to the control chip. The control chip analyzes the distance data to control the four motors to respectively drive the four positioning blocks to slide in the support board until the workpiece is centered on the support board.
摘要翻译：激光打标机包括支撑部分，固定在支撑部分上的激光打标装置，固定在支撑部分上的控制芯片和固定机构。固定机构包括支撑工件的支撑板，移动了四个定位块，四个电动机能够控制四个定位块在支撑板上滑动。固定机构还包括至少两个位置检测器。两个位置检测器能够将检测器的距离数据沿着X轴和Y轴偏离支撑板的中心，并将距离数据传输到控制芯片。控制芯片分析距离数据以控制四个电动机，以分别驱动四个定位块在支撑板中滑动，直到工件在支撑板上居中。

2. 发明申请

US20120146140A1 HIGH-VOLTAGE SEMICONDUCTOR DEVICE WITH LATERAL SERIES CAPACITIVE STRUCTURE 有权
标题翻译：具有横向串联电容结构的高压半导体器件
公开(公告)号：US20120146140A1
公开(公告)日：2012-06-14
申请号：US13325712
申请日：2011-12-14
申请人： Mohamed N. Darwish , Robert Kuo-Chang Yang
发明人： Mohamed N. Darwish , Robert Kuo-Chang Yang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0634 , H01L29/0692 , H01L29/407 , H01L29/66659
摘要： A semiconductor device includes a semiconductor substrate, a source region extending along a top surface of the semiconductor substrate, a drain region extending along the top surface of the semiconductor substrate, and a field shaping region disposed within the semiconductor substrate between the source region and the drain region. A cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region includes an insulating region. The semiconductor device also includes an active region disposed within the semiconductor substrate between the source region and the drain region. The active region is disposed adjacent to the field shaping region in a direction perpendicular to the cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region.
摘要翻译：半导体器件包括半导体衬底，沿着半导体衬底的顶表面延伸的源极区域，沿着半导体衬底的顶表面延伸的漏极区域和设置在源极区域和半导体衬底之间的半导体衬底内的场整形区域漏区。通过场整形区域从源极区域延伸到漏极区域的半导体衬底的横截面包括绝缘区域。半导体器件还包括在源极区域和漏极区域之间设置在半导体衬底内的有源区域。有源区域在垂直于通过场整形区域从源极区域延伸到漏极区域的半导体衬底的横截面的方向上与场整形区域相邻设置。

3. 发明授权

US08193565B2 Multi-level lateral floating coupled capacitor transistor structures 有权
标题翻译：多电平横向浮动耦合电容晶体管结构
公开(公告)号：US08193565B2
公开(公告)日：2012-06-05
申请号：US12426004
申请日：2009-04-17
申请人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
发明人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
IPC分类号： H01L29/66
CPC分类号： H01L29/0847 , H01L27/0733 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/407 , H01L29/7835
摘要： A semiconductor device includes a source region, a drain region, a gate region, and a drift region. The drift region further includes an active drift region and inactive floating charge control (FCC) regions. The active drift region conducts current between the source region and the drain region when voltage is applied to the gate region. The inactive FCC regions, which field-shape the active drift region to improve breakdown voltage, are vertically stacked in the drift region and are separated by the active drift region. Vertically stacking the inactive FCC regions reduce on-resistance while maintaining higher breakdown voltages.
摘要翻译：半导体器件包括源极区，漏极区，栅极区和漂移区。漂移区域还包括有源漂移区域和无效浮动充电控制（FCC）区域。当电压施加到栅极区域时，有源漂移区域在源极区域和漏极区域之间导通电流。场地形成有源漂移区域以改善击穿电压的无活性FCC区域被垂直地堆叠在漂移区域中并且被有源漂移区域分离。垂直堆叠不活动的FCC区域可以降低导通电阻，同时保持更高的击穿电压。

4. 发明申请

US20050286215A1 Notebook computer 审中-公开
标题翻译：笔记本电脑
公开(公告)号：US20050286215A1
公开(公告)日：2005-12-29
申请号：US11073834
申请日：2005-03-07
申请人： Yu-Chun Yang , Kuo-Chang Yang
发明人： Yu-Chun Yang , Kuo-Chang Yang
IPC分类号： G06F1/16
CPC分类号： G06F1/1679 , G06F1/1616
摘要： A notebook computer. A host includes an engaging groove and a first magnet adjacent thereto. A cover structure is rotatably connected to the host, with an actuating member, a second magnet, and an engaging member. The actuating member is movably disposed in the cover structure. The magnetic force of the second magnet is less than that of the first magnet. The engaging member includes magnetic-attractive material and is rotatably disposed in the cover structure. The engaging member is rotated to a first position by pushing the actuating member and is positioned therein by attraction of the second magnet. The engaging member is rotated to a second position by attraction of the first magnet and is engaged in the engaging groove of the host.
摘要翻译：笔记本电脑。主机包括接合槽和与其相邻的第一磁体。盖结构可旋转地连接到主机，具有致动构件，第二磁体和接合构件。致动构件可移动地设置在盖结构中。第二磁体的磁力小于第一磁体的磁力。接合构件包括磁吸引材料，并且可旋转地设置在盖结构中。接合构件通过推动致动构件而旋转到第一位置，并且通过第二磁体的吸引而位于其中。接合构件通过第一磁体的吸引而旋转到第二位置并且接合在主体的接合槽中。

5. 发明授权

US06912122B2 Rotatable display fixing module 失效
标题翻译：可旋转显示固定模块
公开(公告)号：US06912122B2
公开(公告)日：2005-06-28
申请号：US10446092
申请日：2003-05-28
申请人： Wen-Hsiang Chen , Kuo-Chang Yang , Jung-Wen Chang
发明人： Wen-Hsiang Chen , Kuo-Chang Yang , Jung-Wen Chang
IPC分类号： G06F1/16
CPC分类号： G06F1/1679 , G06F1/162 , G06F1/1681 , Y10S248/917
摘要： A rotatable display fixing module is described. The rotatable display fixing module has a first rotational device, a second rotational device, a fixing switch and an auxiliary fixing stud. The first rotational device rotatably connects with a display and the second rotational device. The fixing switch and the auxiliary fixing stud rebound up to fix the second rotational device at predetermined angles and the auxiliary fixing stud passes through a fixing hole on a rotational element of the second rotational device. The display can therefore rotate on the first rotational device only. When the fixing switch and the auxiliary fixing stud are pressed, the display can rotate on the first rotational device and the second rotational device.
摘要翻译：描述可旋转的显示器固定模块。可旋转显示固定模块具有第一旋转装置，第二旋转装置，固定开关和辅助固定螺柱。第一旋转装置与显示器和第二旋转装置可旋转地连接。固定开关和辅助固定螺柱弹回以使预定角度固定第二旋转装置，辅助固定螺柱穿过第二旋转装置的旋转元件上的固定孔。因此，显示器可以仅在第一旋转装置上旋转。当固定开关和辅助固定螺栓被按压时，显示器可以在第一旋转装置和第二旋转装置上旋转。

6. 发明授权

US06891722B2 Magnetic locking device 有权
标题翻译：磁锁装置
公开(公告)号：US06891722B2
公开(公告)日：2005-05-10
申请号：US10657163
申请日：2003-09-09
申请人： Wen-Hsiang Chen , Kuo-Chang Yang , Jung-Wen Chang
发明人： Wen-Hsiang Chen , Kuo-Chang Yang , Jung-Wen Chang
IPC分类号： E05B63/04 , E05B63/24 , E05C5/00 , E05C19/16 , G06F1/16
CPC分类号： G06F1/1679 , E05B63/042 , E05B63/248 , E05C5/00 , E05C19/163 , G06F1/162 , Y10T292/11
摘要： A magnetic locking device is described. The magnetic locking device is utilized for locking an electric device upper cover especially for locking both sides of the display cover of a notebook/tablet dual-purpose personal computer. The magnetic locking device has a lock module and a hook module. The lock module installed in the upper cover has a lock module base, a release button, a magnet, a first bezel and a second bezel. The hook module installed in the electric device base has a hook module base, a spring device, and a hook. The spring device pulls the hook to hide in the electric device base when the hook is not working to improve the electric device appearance and to eliminate interference during operation.
摘要翻译：描述了磁性锁定装置。磁性锁定装置用于锁定电子装置上盖，特别是用于锁定笔记本/平板电脑两用个人计算机的显示器盖的两侧。磁性锁定装置具有锁定模块和挂钩模块。安装在上盖中的锁定模块具有锁定模块底座，释放按钮，磁体，第一挡板和第二挡板。安装在电气设备基座中的挂钩模块具有钩模块底座，弹簧装置和钩子。当挂钩不起作用以改善电气设备外观并消除操作中的干扰时，弹簧装置将钩子隐藏在电气设备基座中。

7. 外观设计

USD487891S1 Notebook/tablet versatile computer 失效
标题翻译：笔记本/平板电脑多功能电脑
公开(公告)号：USD487891S1
公开(公告)日：2004-03-30
申请号：US29174166
申请日：2003-01-13
申请人： Kuo-Chang Yang , Shih-Hwa Lan , Wen-Hsiang Chen , Chang-Yu Shieh
设计人： Kuo-Chang Yang , Shih-Hwa Lan , Wen-Hsiang Chen , Chang-Yu Shieh

8. 发明授权

US08704296B2 Trench junction field-effect transistor 有权
标题翻译：沟槽结场效应晶体管
公开(公告)号：US08704296B2
公开(公告)日：2014-04-22
申请号：US13408212
申请日：2012-02-29
申请人： Robert Kuo-Chang Yang
发明人： Robert Kuo-Chang Yang
IPC分类号： H01L29/66
CPC分类号： H01L29/407 , H01L29/1608 , H01L29/20 , H01L29/808
摘要： In a general aspect, a semiconductor device can include a gate having a first trench portion disposed within a first trench of a junction field-effect transistor device, a second trench portion disposed within a second trench of the junction field-effect transistor device, and a top portion coupled to both the first trench portion and to the second trench portion. The semiconductor device can include a mesa region disposed between the first trench and the second trench, and including a single PN junction defined by an interface between a substrate dopant region having a first dopant type and a channel dopant region having a second dopant type.
摘要翻译：在一般方面，半导体器件可以包括具有设置在结型场效应晶体管器件的第一沟槽内的第一沟槽部分的第一沟槽部分，以及设置在结型场效应晶体管器件的第二沟槽内的第二沟道部分，以及耦合到第一沟槽部分和第二沟槽部分的顶部。半导体器件可以包括设置在第一沟槽和第二沟槽之间的台面区域，并且包括由具有第一掺杂剂类型的衬底掺杂区域和具有第二掺杂剂类型的沟道掺杂剂区域之间的界面限定的单个PN结。

9. 发明授权

US08592906B2 High-voltage semiconductor device with lateral series capacitive structure 有权
标题翻译：具有横向串联电容结构的高压半导体器件
公开(公告)号：US08592906B2
公开(公告)日：2013-11-26
申请号：US13325712
申请日：2011-12-14
申请人： Mohamed N. Darwish , Robert Kuo-Chang Yang
发明人： Mohamed N. Darwish , Robert Kuo-Chang Yang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0634 , H01L29/0692 , H01L29/407 , H01L29/66659
摘要： A semiconductor device includes a semiconductor substrate, a source region extending along a top surface of the semiconductor substrate, a drain region extending along the top surface of the semiconductor substrate, and a field shaping region disposed within the semiconductor substrate between the source region and the drain region. A cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region includes an insulating region. The semiconductor device also includes an active region disposed within the semiconductor substrate between the source region and the drain region. The active region is disposed adjacent to the field shaping region in a direction perpendicular to the cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region.
摘要翻译：半导体器件包括半导体衬底，沿着半导体衬底的顶表面延伸的源极区域，沿着半导体衬底的顶表面延伸的漏极区域和设置在源极区域和半导体衬底之间的半导体衬底内的场整形区域漏区。通过场整形区域从源极区域延伸到漏极区域的半导体衬底的横截面包括绝缘区域。半导体器件还包括在源极区域和漏极区域之间设置在半导体衬底内的有源区域。有源区域在垂直于通过场整形区域从源极区域延伸到漏极区域的半导体衬底的横截面的方向上与场整形区域相邻设置。

10. 发明申请

US20120211834A1 MULTI-LEVEL LATERAL FLOATING COUPLED CAPACITOR TRANSISTOR STRUCTURES 有权
标题翻译：多级横向浮动耦合电容器晶体管结构
公开(公告)号：US20120211834A1
公开(公告)日：2012-08-23
申请号：US13461646
申请日：2012-05-01
申请人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
发明人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L27/0733 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/407 , H01L29/7835
摘要： A semiconductor device includes an active region having a first floating charge control structure and a termination region having a second floating charge control structure. The second floating charge control structure is at least twice as long as the first floating control structure.
摘要翻译：半导体器件包括具有第一浮动电荷控制结构的有源区和具有第二浮置电荷控制结构的端接区。第二浮动充电控制结构至少是第一浮动控制结构的两倍。

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