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    • 9. 发明申请
    • FABRICATION OF CONTACTS FOR SEMICONDUCTOR SUBSTRATES
    • 半导体衬底接触的制造
    • WO2011095968A2
    • 2011-08-11
    • PCT/IL2011000112
    • 2011-01-31
    • XJET LTDPELEG RAN ASHERDOVRAT MICHAELKRITCHMAN ELIAHU M
    • PELEG RAN ASHERDOVRAT MICHAELKRITCHMAN ELIAHU M
    • H01L31/0224
    • H01L31/022425H01L31/068Y02E10/547
    • A method for fabricating electric contacts for a semiconductor substrate includes depositing a first line of a first conducting material on the semiconductor substrate and depositing a second line of a second conducting material on the substrate, so as to cross the first line. The first conducting material and the second conducting material may differ from one another in that the first conducting material and the second conducting material penetrate into the substrate to different depths when subjected to a heat treatment. Furthermore, materials may differ from one another in that an electrical connection formed between the substrate and the first conducting material when subjected to the heat treatment differs in its contact resistivity from an electrical connection formed between the substrate and the second conducting material when subjected to the heat treatment. Alternatively, the method may include depositing a first line of a conducting material on the substrate, the first line including a zone of reduced thickness, and depositing a second line of a conducting material on the substrate, so as to cross the first line at the zone of the reduced thickness.
    • 一种用于制造用于半导体衬底的电触头的方法,包括在半导体衬底上沉积第一导电材料的第一线,并在衬底上沉积第二导电材料的第二线,以跨过第一线。 第一导电材料和第二导电材料可以彼此不同,因为当进行热处理时,第一导电材料和第二导电材料在基板中渗透到不同的深度。 此外,材料可以彼此不同,因为当经受热处理时,在基板和第一导电材料之间形成的电连接的接触电阻与当基板和第二导电材料之间形成的电连接受到 热处理。 或者,该方法可以包括在衬底上沉积导电材料的第一线,第一线包括厚度减小的区域,以及在衬底上沉积导电材料的第二线,从而在第 厚度减小的区域。