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1. 发明专利

RU2371258C1 СПОСОБ МОДИФИКАЦИИ ПОВЕРХНОСТНЫХ СВОЙСТВ МАТЕРИАЛОВ И УСТАНОВКА 未知
公开(公告)号：RU2371258C1
公开(公告)日：2009-10-27
申请号：RU2008135319
申请日：2008-09-03
申请人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
发明人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
IPC分类号： B05D3/04
摘要： Изобретениеотноситсяк технологиимодификацииповерхностныхсвойствматериалови коборудованию, предназначенномудляосуществлениятехнологическогопроцессаобработки, иможетиспользоватьсяв различныхпроизводственныхпроцессах, длякоторыхтребуетсявысокаягидрофильностьи высокаяадгезионнаяспособностьобрабатываемойповерхности. Задачейизобретенияявляетсяувеличениескоростии эффективностипроцессамодификацииповерхностныхсвойствобрабатываемыхматериаловзасчетснижениявеличиныкраевогоуглаобработаннойповерхностии повышениясилыадгезииповерхностипослеоблученияобразцапучкомионовдозаданнойдозыоблучения. Дляэтогов способемодификацииповерхностныхсвойствматериаловпередподачейвдольобрабатываемойповерхностиобразцаосуществляютдиссоциациюпотокагазаилисмесихимическиактивныхгазовдодостижениястепенидиссоциациинеменее 5%. Вустановкедлямодификацииповерхностныхсвойствматериаловсистемаподачипотокахимическиактивногогазаилисмесихимическиактивныхгазоввдольобрабатываемойповерхностивключаетв свойсоставустройство, обеспечивающеедиссоциациюхимическиактивногогазаилисмесихимическиактивныхгазовдодостижениястепенидиссоциациинеменее 5%. Прииспользованииизобретенияповышаетсяпроизводительностьпроцессамодификацииповерхностныхсвойствматериалов, существенноулучшаютсягидрофильныеи адгезионныесвойстваобработаннойповерхностиизделий. 2 н. и 12 з.п. ф-лы, 1 табл., 10 ил.

2. 发明专利

RU2382119C1 СПОСОБ ПЛАЗМЕННОГО ОСАЖДЕНИЯ ПОЛИМЕРНЫХ ПОКРЫТИЙ И УСТАНОВКА ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ 未知
公开(公告)号：RU2382119C1
公开(公告)日：2010-02-20
申请号：RU2008143079
申请日：2008-10-31
申请人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
发明人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
IPC分类号： B05D3/14 , C23C16/22 , C23C16/50 , H01L21/205
摘要： Изобретениеотноситсяк способуи устройствуплазменногоосажденияполимерныхпокрытий. Обрабатываемыеобразцыпомещаютв вакуумнуюкамеру. Заполняютвакуумнуюкамеруреакционнымгазом, содержащим, поменьшеймере, одинспособныйк плазменнойполимеризациигаз-мономер. Генерируютплазмупосредствомзажиганияи поддержаниядвухступенчатоготлеющегоразрядав двухпространственноразделенныхразрядныхобъемахи осаждаютполимерноепокрытиенаповерхностьобрабатываемогообразца. Первыйразрядныйобъемотделяютотвторогоразрядногообъемас помощьюперфорированногоэлектрода, размеротверстийв которомпревышает 0,1 мм. Обрабатываемыйобразецустанавливаютнаэлектроде, которыйразмещаютвовторомразрядномобъеменапротивперфорированногоэлектрода. Наэлектрод, служащийдержателемобрабатываемогообразца, подаютпотенциалсмещенияотносительноперфорированногоэлектрода. Впервомразрядномобъемемогутиспользоватьсяразличныевидыгазовогоразряда: индукционныйвысокочастотныйразряд, емкостныйвысокочастотныйразряд, разрядпостоянноготока. Разрядможетподдерживатьсяв импульснойформе. Впроцессеплазменнойполимеризациирегулируютрасстояниемеждуперфорированнымэлектродоми электродом, служащимдержателемобрабатываемогообразца. Изобретениепозволяетобеспечитьнезависимоерегулированиескоростиосажденияполимерногопокрытия, структурыи свойствосаждаемогопокрытияпривысокойпроизводительноститехнологическогопроцесса. 2 н. и 12 з.п. ф-лы, 1 ил.

3. 发明专利

RU2371803C1 ПЛАЗМЕННЫЙ ИСТОЧНИК ИОНОВ 未知
公开(公告)号：RU2371803C1
公开(公告)日：2009-10-27
申请号：RU2008126158
申请日：2008-06-27
申请人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
发明人： VAVILIN KONSTANTIN VIKTOROVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , KO SEOK KEUN , LI CHEOL SU
IPC分类号： H01J3/04 , H01J37/08
摘要： Изобретениеотноситсяк плазменнойтехнике, аименнок плазменнымисточникам, предназначеннымдлягенерацииинтенсивныхионныхпучков. Плазменныйисточникионовсодержиткатоднуюкамеру (1), снабженнуюпатрубком (2) вводагаза. Навнешнейстенкекатоднойкамеры (1) установленытрубки (10) принудительнойсистемыохлаждения. Полыйанод (3) образуетаноднуюкамеру (4) источникаионов. Ввыходномотверстиианоднойкамеры (4) размещенэмиссионныйэлектрод (11) системыизвлеченияионов. Междукатоднойи аноднойкамерамиустановлендополнительныйэлектрод (5), вкоторомвыполненыотверстия (9). Диаметр d отверстий (9) выбранизусловия 0,1 мм

4. 发明专利

RU2190484C1 METHOD FOR PLASMA DEPOSITION OF POLYMERIC COATINGS AND METHOD FOR PLASMA GENERATION 未知
公开(公告)号：RU2190484C1
公开(公告)日：2002-10-10
申请号：RU2001114812
申请日：2001-06-04
申请人： BUGROV GLEB EHL MIROVICH , VAVILIN KONSTANTIN VIKTOROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH
发明人： BUGROV G EH , VAVILIN K V , KONDRANIN S G , KRAL KINA E A , PAVLOV V B
IPC分类号： B05D3/06 , B05D7/24
摘要： processes for applying coatings onto metallic and dielectric substrates, namely, at using plasma polymerization and plasma generation. SUBSTANCE: method for plasma deposition of polymeric coating comprises steps of placing treated sample to discharge space; filling discharge chamber with reaction gas containing at least one gaseous monomer capable to plasma polymerization; generating plasma in discharge space at igniting and sustaining periodic gas discharge with periodically repeated pulse train. At process of plasma polymerization of gaseous monomer polymeric coating is deposited upon surface of treated sample. In order to provide plasma polymerization, periodic-pulse discharge with total duration of electric current change for separate pulse of discharge in range (10-7-10-1) s is realized. Pause duration between separate pulses of each pulse train is selected in range (10-5-10-2) s. It is possible to preliminarily clean and to modify surface of treated sample before deposition of polymeric coating, or it is possible to apply protective and/or intermediate adhesion coating by plasma deposition method. EFFECT: enhanced efficiency of plasma polymerization process, continuous technological process, improved quality of deposited coating, possibility for controlling parameters of process. 22 cl, 3 dwg

5. 发明专利

RU2151438C1 RIBBON-BEAM ION PLASMA SOURCE (DESIGN VERSIONS) 未知
公开(公告)号：RU2151438C1
公开(公告)日：2000-06-20
申请号：RU99120227
申请日：1999-09-23
申请人： BUGROV GLEB EHL MIROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH
发明人： BUGROV G EH , KONDRANIN S G , KRAL KINA E A , PAVLOV V B
IPC分类号： H01J27/16 , H01J37/08 , H05H1/46
摘要： plasma engineering. SUBSTANCE: plasma source used for generating ribbon-beam ions for various processes including coating and ion implantation processes has ionization chamber with rectangular emitting aperture, working medium supply unit, high-frequency energy input unit, and electrostatic ion extraction system. Magnetic system of ion source functions to build up magnetic field inside ionization chamber whose flux density reduces from chamber walls towards its longitudinal symmetry axis and towards emitting aperture. Ion source of first design version has its high-frequency energy input unit built up of two sections arranged on opposite sides of ionization chamber. Each section is formed by long current conductors placed in parallel on side insulating walls of chamber along emission aperture. Ion source of second design version has its high-frequency energy input unit built up of at least two sections each one being formed by current conductors placed in parallel on side walls of chamber and crosswise of longitudinal symmetry axis of emission aperture. Conductor leads are series-connected in each section through make contact members to form series power circuit. Ion source provides for producing long ribbon beam of ions of inert and chemically active substances with high degree of uniformity of current density through beam sectional area. EFFECT: improved reliability, service life, and power efficiency; reduced gas requirement. 14 cl, 5 dwg

6. 发明专利

RU2121729C1 GASEOUS-DISCHARGE DEVICE 未知
公开(公告)号：RU2121729C1
公开(公告)日：1998-11-10
申请号：RU96122058
申请日：1996-11-18
申请人： ANTONOVA TAT JANA BORISOVNA , BUGROV GLEB EHL MIROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , ALEKSANDROV ANDREJ FEDOROVICH , RUKHADZE ANRI AMVROSIEVICH
发明人： ANTONOVA TAT JANA BORISOVNA , BUGROV GLEB EHL MIROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , ALEKSANDROV ANDREJ FEDOROVICH , RUKHADZE ANRI AMVROSIEVICH
IPC分类号： H05H1/24 , F03H1/00 , H01J27/00 , H01J27/02 , H01J27/16 , H01J27/18 , H05H1/46 , H05H1/54
摘要： FIELD: plasma engineering; generation of stream of charged particles, such as ions, for various processes and for space vehicle engines. SUBSTANCE: device has axially symmetrical chamber with at least one butt-end wall, assembly for introducing high-frequency energy into chamber, and magnetic system that functions to build up stationary heterogeneous magnetic field inside chamber. Magnetic field strength coincides in radial direction to center line and in longitudinal direction to butt-end part of chamber opposite to location of high-frequency energy input assembly. The latter is made in the form of periodically repeated symmetrical zigzag-shaped conductor placed on side and butt- end walls of chamber embracing plasma-producing region. EFFECT: improved energy and gas efficiency. 5 cl, 3 dwgo

7. 发明专利

RU2196395C1 PLASMA REACTOR AND PLASMA GENERATING DEVICE (ALTERNATIVES) 未知
公开(公告)号：RU2196395C1
公开(公告)日：2003-01-10
申请号：RU2001114393
申请日：2001-05-30
申请人： ALEKSANDROV ANDREJ FEDOROVICH , BUGROV GLEB EHL MIROVICH , VAVILIN KONSTANTIN VIKTOROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , RUKHADZE ANRI AMVROSIEVICH
发明人： ALEKSANDROV A F , BUGROV G EH , VAVILIN K V , KONDRANIN S G , KRAL KINA E A , PAVLOV V B , RUKHADZE A A
IPC分类号： H05H1/24 , H01J37/32 , H05H1/46
摘要： FIELD: plasma engineering and material treatment. SUBSTANCE: plasma reactor has discharge chamber, material treatment chamber, magnetic system producing stationary heterogeneous magnetic field in chamber space, and double-section high-frequency energy lead-in assembly. First alternative of reactor design has its first section made in the form of series-connected conductor lengths disposed on external side of discharge-chamber insulating wall. Current flows through two opposing conductor lengths in opposite directions. Second section is made in the form of spiral conductor placed on external side of discharge chamber, on one or more of its insulating walls. First section is mounted above central part of discharge chamber and second one, around first section. Second alternative of reactor design has first section of high- frequency lead-in assembly made in the form of spiral conductor whose turns are disposed on external side of discharge-chamber insulating wall. First and second sections are made in the form of opposing-lay spirals, first section being installed above central part of discharge chamber and second one, round first section. EFFECT: generation of dense plasma regions spatially uniform in concentration for uniform material treatment. 32 cl, 6 dwg

8. 发明专利

RU2196394C1 METHOD AND DEVICE FOR PLASMA TREATMENT OF MATERIAL AND PLASMA GENERATION PROCESS 未知
公开(公告)号：RU2196394C1
公开(公告)日：2003-01-10
申请号：RU2001113237
申请日：2001-05-18
申请人： ALEKSANDROV ANDREJ FEDOROVICH , BUGROV GLEB EHL MIROVICH , VAVILIN KONSTANTIN VIKTOROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH , PLAKSIN VADIM JUR EVICH , SERGIENKO VLADIMIR JUR EVICH , TIMOFEEV IGOR BORISOVICH
发明人： ALEKSANDROV A F , BUGROV G EH , VAVILIN K V , KONDRANIN S G , KRAL KINA E A , PAVLOV V B , PLAKSIN V JU , SERGIENKO V JU , TIMOFEEV I B
IPC分类号： H05H1/00 , B08B7/00 , B29C59/14 , C23C4/00 , C23C16/515 , H05H1/24
摘要： FIELD: plasma engineering; plasma treatment of materials; surface treatment by means of high-pressure discharge. SUBSTANCE: method includes supply of working gas to discharge gap and ignition of electrical discharge by means of extended discharge electrode disposed against surface being treated. Electrode is supplied with intermittently varying voltage to maintain extended discharge at atmospheric pressure, Plasma is generated by supplying gas flow at angle of 10 to 60 deg. to longitudinal axis or to symmetry plane of extended electrode in direction of surface under treatment. Gas is supplied uniformly along extended discharge electrode. Material-treatment gas-distribution device has insulating case provided with tilted gas-feeding channels. Outlet ports of channels are uniformly disposed on gas-distributor case against extended discharge electrode over its length. Material being treated acquires modified properties with high degree of uniformity over its surface by varying both composition of working gas and discharge parameters. EFFECT: improved properties of modified material. 20 cl, 10 dwg

9. 发明专利

RU2167466C1 PLASMA ION SOURCE AND ITS OPERATING PROCESS 未知
公开(公告)号：RU2167466C1
公开(公告)日：2001-05-20
申请号：RU2000113185
申请日：2000-05-30
申请人： BUGROV GLEB EHL MIROVICH , KONDRANIN SERGEJ GENNAD EVICH , KRAL KINA ELENA ALEKSANDROVNA , PAVLOV VLADIMIR BORISOVICH
发明人： BUGROV G EH , KONDRANIN S G , KRAL KINA E A , PAVLOV V B
IPC分类号： H01J3/04 , F03H1/00 , H01J37/08
摘要： plasma engineering; plasma sources for generation of intensive ion beams. SUBSTANCE: plasma ion source producing ion beams that can be used in various processes such as coating, ion assistance, ion implanting, or in changing material properties has cathode chamber with gas inlet. Hollow anode forming anode chamber communicates with cathode chamber through outlet opening provided in wall of the latter. Ion source incorporates electric ion-extraction system with emissive electrode mounted in outlet opening of anode chamber. Magnetic system functions to build up magnetic field in cathode and anode chambers with primarily axially directed vector of its flux density. Cathode chamber accommodates firing electrode electrically connected with hollow anode. Outlet hole of cathode chamber receives additional electrode electrically isolated from hollow anode and from cathode chamber. Additional electrode has axial hole whose diameter d is not over 0.1D, where D is maximal inner cross-sectional area of hollow anode. EFFECT: enhanced power efficiency and gas saving ability of device, improved uniformity of ion current density. 26 cl, 3 dwg

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