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1. 发明专利

JP2008072105A Printed non-volatile memory 审中-公开
标题翻译：打印的非易失性存储器
公开(公告)号：JP2008072105A
公开(公告)日：2008-03-27
申请号：JP2007218722
申请日：2007-08-24
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ARVIND KAMATH , SMITH PATRICK , CLEEVES JAMES MONTAGUE
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28518 , H01L21/288 , H01L21/76801 , H01L21/76895 , H01L27/115 , H01L27/11558 , H01L27/1292 , H01L29/66757 , H01L29/66825 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a method for preparing a non-volatile memory, a thin film transistor and a circuit including these components on various substrates. SOLUTION: The non-volatile memory cell is provided with: first and second semiconductor islands separated from each other by a prescribed distance on the same horizontal level so that the first semiconductor island configures a control gate 2 and the second semiconductor island configures a source terminal and a drain terminal; a gate dielectric layer formed at least on a part of the first semiconductor island; a tunnel ring dielectric layer 5 formed at least on a part of the second semiconductor island; a floating gate 7 formed at least on a part of the gate dielectric layer 4 and the tunnel ring dielectric layer 5, and a metal layer electrically contacting with the control gate 2 and the source and drain terminals. In one effective embodiment, the non-volatile memory cell can be manufactured by using "all-printed" processing technology. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制备非易失性存储器，薄膜晶体管和在各种衬底上包括这些部件的电路的方法。解决方案：非易失性存储单元具有：第一和第二半导体岛在相同的水平水平上彼此分开规定的距离，使得第一半导体岛配置控制栅极2，并且第二半导体岛配置源极端子和漏极端子; 至少形成在所述第一半导体岛的一部分上的栅介质层; 形成在所述第二半导体岛的至少一部分上的隧道环状电介质层5; 至少形成在栅极电介质层4和隧道环电介质层5的一部分上的浮动栅极7以及与控制栅极2以及源极和漏极端子电接触的金属层。在一个有效的实施例中，可以通过使用“全印刷”处理技术来制造非易失性存储单元。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007059880A Method for manufacturing rfid tag, and mechanism formed by using rfid tag 有权
标题翻译：制造RFID标签的方法和使用RFID标签形成的机制
公开(公告)号：JP2007059880A
公开(公告)日：2007-03-08
申请号：JP2006186310
申请日：2006-07-06
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： CLEEVES JAMES M , J DEVIN MACKENZIE , KAMATH ARVIND
IPC分类号： H01L29/786 , G06K19/07 , G06K19/077 , H01L21/20 , H01L21/336 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/08
CPC分类号： H01L27/1255 , G06K19/073 , G06K19/07749 , H01F17/0006 , H01L23/13 , H01L23/142 , H01L23/66 , H01L27/127 , H01L27/1292 , H01L28/60 , H01L29/66143 , H01L29/66742 , H01L29/78696 , H01L29/872 , H01L2223/6611 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an RFID tag and an RFID tag manufacturing method. SOLUTION: An RFID device is provided with (1) a metal antenna and/or inductor; (2) a dielectric layer for supporting an integrated circuit to insulate the integrated circuit from the metal antenna and/or inductor and formed on the metal antenna and/or inductor; (3) a plurality of diodes and transistors formed on the dielectric layer and having at least one same layer; and (4) a plurality of capacitors, that are electrically connected with the metal antenna and/or inductor and at least a part of the plurality of diodes and having at least one identical layer as the plurality of diodes and/or the contact the plurality of diodes and transistors. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供RFID标签和RFID标签制造方法。解决方案：RFID设备设置有（1）金属天线和/或电感器; （2）用于支撑集成电路以使集成电路与金属天线和/或电感器绝缘并形成在金属天线和/或电感器上的电介质层; （3）形成在电介质层上并具有至少一个相同层的多个二极管和晶体管; 和（4）多个电容器，其与所述金属天线和/或电感器以及所述多个二极管的至少一部分电连接并且具有至少一个与所述多个二极管相同的层和/或接触所述多个二极管的二极管和晶体管。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2014150277A Printing of contact metal and interconnection metal by seed printing and plating 有权
标题翻译：通过种子印刷和镀层印刷接触金属和互连金属
公开(公告)号：JP2014150277A
公开(公告)日：2014-08-21
申请号：JP2014079578
申请日：2014-04-08
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ADITI CHANDRA , KAMATH ARVIND , JAMES MONTAGUE CLEEVES , JOERG ROCKENBERGER , TAKASHIMA MASAO
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/385 , H01L21/768 , H01L23/532
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a contact formation method using ink containing a silicide formation metal, and to provide an electric device such as a diode and/or a transistor including that contact and a local interconnection.SOLUTION: A method for forming a metal silicide contact includes a step for depositing a silicide formation metal ink on the exposed silicon surface, a step for forming a silicide formation metal precursor by drying the ink, and a step for forming a metal silicide contact by heating the silicide formation metal precursor and the silicon surface. A metal-containing interconnection can be formed by optionally depositing a metal precursor ink selectively on a dielectric layer adjoining the exposed silicon surface. Furthermore, one or a plurality of bulk conductive metals may be deposited on the remaining metal precursor ink and/or the dielectric layer. A diode, a transistor, and the like, can be manufactured using such a printed contact and/or a local interconnection.
摘要翻译：要解决的问题：提供一种使用含有硅化物形成金属的油墨的接触形成方法，并提供包括该接触和局部互连的二极管和/或晶体管的电子器件。解决方案：一种形成金属的方法硅化物接触包括在暴露的硅表面上沉积硅化物形成金属油墨的步骤，通过干燥油墨形成硅化物形成金属前体的步骤，以及通过加热硅化物形成金属前体和形成金属硅化物接触的步骤硅表面。可以通过任选地在邻近暴露的硅表面的电介质层上沉积金属前体油墨来形成含金属的互连。此外，可以在剩余的金属前体油墨和/或电介质层上沉积一个或多个本体导电金属。可以使用这种印刷触点和/或局部互连来制造二极管，晶体管等。

4. 发明专利

JP2009048371A Rf tag/device having integrated interposer and/or rfid tag/device, production method thereof, and use method 审中-公开
标题翻译：具有集成式间插器和/或RFID标签/装置的RF标签/装置，其制造方法和使用方法
公开(公告)号：JP2009048371A
公开(公告)日：2009-03-05
申请号：JP2007212941
申请日：2007-08-17
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： MACKENZIE J DEVIN , PAVATE VIKRAM
IPC分类号： G06K19/077 , G06K19/07
摘要： PROBLEM TO BE SOLVED: To effectively provide an inexpensive RFID (Radio Frequency IDentification) tag. SOLUTION: This tag is equipped with; an interposer; an antenna and/or an inductor thereon, and an integrated circuit prepared on the interposer avoiding the antenna, etc., and having a bottom layer in contact with a surface of the interposer physically. This production method includes a step of forming a bottom layer of the integrated circuit on a surface of the interposer; a step of forming a following layer of the integrated circuit on the bottom layer of the integrated circuit; and a step of connecting a conductive layer to the interposer. A structure having conductivity may be formed from a functional layer attached to the interposer. This method includes; a step in which this device emits a detectable electromagnetic signal to generate sufficient current to reflect or modulate, or guides; a step of detecting the signal; and a step of processing information carried by the detectable electromagnetic signal. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：有效提供廉价的RFID（射频识别）标签。
解决方案：此标签配有中介者在其上的天线和/或电感器，以及在内插器上准备的集成电路，避免天线等，并且具有物理上与插入器的表面接触的底层。该制造方法包括在内插器的表面上形成集成电路的底层的工序; 在所述集成电路的底层上形成所述集成电路的后续层的步骤; 以及将导电层连接到插入件的步骤。具有导电性的结构可以由附着到插入件的功能层形成。该方法包括：该装置发射可检测的电磁信号以产生足够的电流以反射或调制或引导的步骤; 检测信号的步骤; 以及处理由可检测电磁信号携带的信息的步骤。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006261664A Mos transistor with laser-patterned metal gate and method for forming the transistor 有权
标题翻译：具有激光图案的金属栅的MOS晶体管和形成晶体管的方法
公开(公告)号：JP2006261664A
公开(公告)日：2006-09-28
申请号：JP2006064769
申请日：2006-03-09
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： CHOI CRISWELL , ROCKENBERGER JOERG , J DEVIN MACKENZIE , GUDEMAN CHRISTOPHER
IPC分类号： H01L29/786 , H01L21/288 , H01L21/336 , H01L29/423 , H01L29/49
CPC分类号： H01L21/32131 , H01L21/28123 , H01L21/84 , H01L27/1292 , H01L29/66757
摘要： PROBLEM TO BE SOLVED: To provide a MOS transistor having a laser-patterned metal gate and its manufacturing method. SOLUTION: A dielectric thin film is located on an electrically functioning substrate including an inorganic semiconductor. A method of forming a layer of a metal content material thereon comprises processes of laser-patterning the metal gate from a metal content material layer, and forming a source terminal and a drain terminal within the inorganic semiconductor located near the metal gate. The transistor generally comprises the electrically functioning substrate, the dielectric thin film located on at least one part of the electrically functioning substrate, the metal gate which is located on the laser-patterned dielectric thin film, and the source terminal and the drain terminal which include doped inorganic semiconductor layers located near the metal gate. A MOS thin film transistor having a reliable electric characteristic is provided promptly, efficiency, and/or at low cost. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供具有激光图案化金属栅极的MOS晶体管及其制造方法。解决方案：电介质薄膜位于包括无机半导体的电功能衬底上。在其上形成金属含量材料层的方法包括从金属含量材料层激光图案化金属栅极的工艺，以及在位于金属栅极附近的无机半导体内形成源极端子和漏极端子的工艺。晶体管通常包括电功能衬底，位于电功能衬底的至少一部分上的电介质薄膜，位于激光图案化电介质薄膜上的金属栅极，以及源极端子和漏极端子，其包括掺杂的无机半导体层位于金属栅极附近。能够及时，高效，低成本地提供具有可靠电特性的MOS薄膜晶体管。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2012185834A Printed radio frequency identification (rfid) tag using tags-talk-first (ttf) protocol 审中-公开
标题翻译：使用标签 - 标签（TTF）协议的打印无线电频率标识（RFID）标签
公开(公告)号：JP2012185834A
公开(公告)日：2012-09-27
申请号：JP2012095811
申请日：2012-04-19
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： SUBRAMANIAN VIVEK , PAVATE VIKRAM
IPC分类号： G06K19/07 , G06K19/077 , H04B5/02
CPC分类号： G06K19/0723
摘要： PROBLEM TO BE SOLVED: To provide a method, an algorithm, architecture, a circuit, and/or a system for EAS, HF, UHF, and RFID designs suitable for multiple tag reading applications using a TTF collision prevention scheme.SOLUTION: A tag for wirelessly communicating with a reader is configured to comprise: (i) a memory portion having an identifier and at least one printed layer; and (ii) a circuit for providing a bit string followed by a predetermined silent period, where the bit string is related to the identifier. The tag comprises pre-programmed memory bits (for example, bits values of which are programmed by printing), or memory bits formed by conventional photolithography, and having a connection made by using printing technology to form the identifier.
摘要翻译：要解决的问题：提供适用于使用TTF冲突预防方案的多标签读取应用的适用于EAS，HF，UHF和RFID设计的方法，算法，架构，电路和/或系统。用于与读取器无线通信的标签被配置为包括：（i）具有标识符和至少一个印刷层的存储器部分; 以及（ii）用于提供位串的电路，其后是预定的无声期，其中所述位串与所述标识符相关。标签包括预编程的存储器位（例如，其位值通过打印编程）或由常规光刻形成的存储器位，并且具有通过使用打印技术形成标识符的连接。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2007184552A Process-variation tolerant diode, standard cell including same, tag and sensor containing same, and method for fabricating same 有权
标题翻译：过程稳定二极管，包括其的标准电池，标签和包含它们的传感器及其制造方法
公开(公告)号：JP2007184552A
公开(公告)日：2007-07-19
申请号：JP2006307027
申请日：2006-11-13
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： SUBRAMANIAN VIVEK , SMITH PATRICK
IPC分类号： H01L29/861 , H01L21/3205 , H01L23/52 , H01L29/47 , H01L29/786 , H01L29/872
CPC分类号： H01L29/86 , H01L27/1285 , H01L27/1288 , H01L27/1292 , Y10S257/91 , Y10T307/964
摘要： PROBLEM TO BE SOLVED: To provide a diode exhibiting resistance to process variation, and to provide a diode connection thin film transistor (TFT). SOLUTION: A printed or patterned structure (e.g. circuit) including a diode and a TFT, method of fabricating the same, and applications of the same for identification tags and sensors are disclosed. A printed structure including a complementary pair of diodes or a diode-connected TFT in series can stabilize the threshold voltage (V t ) of a diode fabricated by using a print or laser lithography technology. A stability in forward voltage drop of a print or laser lithography diode can be established or enhanced by utilizing separation between the V t (V tn ) of NMOS TFT and the V t (V tp ) of PMOS TFT. A further application relates to a reference voltage generator, a voltage clamp circuit, a method of controling voltage in reference or differential signal transmission line, and RFID and EAS tag and sensor. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供对工艺变化具有阻力的二极管，并提供二极管连接薄膜晶体管（TFT）。公开了一种包括二极管和TFT的印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。包括互补的一对二极管或二极管连接的TFT串联的印刷结构可以稳定通过使用印刷或激光平版印刷技术制造的二极管的阈值电压（V t ）。印刷或激光光刻二极管的正向压降的稳定性可以通过利用NMOS TFT的V （V tn ）与V TFT的间隔来建立或增强， SB> t （V tp ）。进一步的应用涉及参考电压发生器，电压钳位电路，控制参考或差分信号传输线中的电压的方法，以及RFID和EAS标签和传感器。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005051222A Composition and method for forming semiconductor and/or silicon-containing thin film and structure formed therefrom 审中-公开
标题翻译：用于形成半导体和/或含硅薄膜和其形成的结构的组合物和方法
公开(公告)号：JP2005051222A
公开(公告)日：2005-02-24
申请号：JP2004202419
申请日：2004-07-08
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： KUNZE KLAUS , HAUBRICH SCOTT , ZURCHER FABIO , RIDLEY BRENT , ROCKENBERGER JOERG
IPC分类号： B32B9/04 , B32B13/04 , C09D11/00 , H01L21/20 , H01L21/208 , H01L21/336 , H01L21/44
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： PROBLEM TO BE SOLVED: To provide compositions and methods for forming patterned semiconductors and patterned semiconductor thin films and/or to provide structures. SOLUTION: The composition comprises passivated semiconductor nanoparticles and at least one of first Group IVA compounds represented by the formula (AH X ) n wherein A is independently Si or Ge and/or second Group IVA compounds represented by the formula (AH X ) m (AH y R z-y ) p (ZR' w ) q , wherein each A is independently Si or Ge, each R is independently alkyl, aryl, aralkyl, halogen, BH s R" 2-s , PH s R" 2-s , AsH s R" 2-s , or AH t R" 3-t , and R" is alkyl, aryl, aralkyl, halogen or AH 3 , and Z is selected from a group of B(boron), P(phosphorus), and As(arsenic), and R' is R or H(hydrogen). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于形成图案化半导体和图案化半导体薄膜的组合物和方法和/或提供结构。解决方案：组合物包含钝化的半导体纳米颗粒和由式（AH X ）表示的至少一种第一组IVA化合物，其中A独立地为Si或Ge 和/或由式（AH X ）表示的第二组IVA化合物（AH X 其中每个A独立地为Si或Ge，每个R独立地为烷基，芳基，芳烷基，卤素，芳基，芳基， BH R“ 2-s ，PH R” 2-s ，AsH < / SB> R“ 2-s 或AH R” 3-t ，R“为烷基，芳基，芳烷基，卤素或AH 3 ，Z选自B（硼），P（磷）和As（砷），R'是R或H（氢）。（C）2005，JPO＆NCIPI

9. 发明专利

JP2014160515A Wireless devices including printed integrated circuitry and methods for manufacturing and using the same 有权
标题翻译：包括印刷集成电路的无线设备及其制造和使用方法
公开(公告)号：JP2014160515A
公开(公告)日：2014-09-04
申请号：JP2014115841
申请日：2014-06-04
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： PATRICK SMITH , CRISWELL CHOI , VIKRAM PAVATE , JAMES MONTAGUE CLEEVES , VIVEK SUBRAMANIAN , RICHARD YOUNG , VINCE BIVIANO
IPC分类号： G06K19/077 , G06K19/07 , H01L23/12 , H05K1/14 , H05K3/36
CPC分类号： G06K19/07749 , G06K19/0775 , G06K19/07752 , Y10T29/49124
摘要： PROBLEM TO BE SOLVED: To provide printed integrated circuitry and attached antenna and/or inductor for sensors, electronic article surveillance, RFID tags and devices, and methods for manufacture thereof.SOLUTION: A tag includes printed integrated circuitry on one carrier, and an antenna and/or inductor on another carrier, the integrated circuitry being electrically coupled to the antenna and/or inductor. The method of manufacture generally includes printing an integrated circuit having a plurality of first pads on a carrier, forming an antenna and/or inductor having a plurality of second pads on a substrate, and attaching at least two of the first pads of the printed integrated circuit to corresponding second pads of the antenna and/or inductor. The present invention provides a low cost RFID tag capable of operating at MHz frequencies that can be manufactured in a shorter time period than the prior art.
摘要翻译：要解决的问题：提供用于传感器，电子物品监视，RFID标签和设备的印刷集成电路和附接的天线和/或电感器及其制造方法。解决方案：标签包括在一个载体上的印刷集成电路和天线和/或电感器，所述集成电路电耦合到所述天线和/或电感器。制造方法通常包括在载体上印刷具有多个第一焊盘的集成电路，形成在衬底上具有多个第二焊盘的天线和/或电感器，以及附接印刷的集成的至少两个第一焊盘电路到天线和/或电感器的对应的第二焊盘。本发明提供一种低成本RFID标签，其能够以比现有技术更短的时间周期制造的MHz频率工作。

10. 发明专利

JP2012178569A Printed non-volatile memory 有权
标题翻译：打印的非易失性存储器
公开(公告)号：JP2012178569A
公开(公告)日：2012-09-13
申请号：JP2012077885
申请日：2012-03-29
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ARVIND KAMATH , SMITH PATRICK , CLEEVES JAMES MONTAGUE
IPC分类号： H01L29/792 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/786 , H01L29/788
CPC分类号： H01L21/28518 , H01L21/288 , H01L21/76801 , H01L21/76895 , H01L27/115 , H01L27/11558 , H01L27/1292 , H01L29/66757 , H01L29/66825 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory cell using a low-cost high-throughput printing technology.SOLUTION: A non-volatile memory cell comprises: first and second semiconductor islands placed a predetermined distance apart at the same horizontal level, the first semiconductor island 2 providing a control gate and the second semiconductor island 3 providing source and drain terminals; a gate dielectric layer 4 on at least part of the first semiconductor island 2; a tunneling dielectric layer 5 on at least part of the second semiconductor island; a floating gate 7 on at least part of the gate dielectric layer 4 and the tunneling dielectric layer 5; and a metal layer in electrical contact with the control gate 2 and the source and drain terminals. In one advantageous embodiment, the non-volatile memory cell may be manufactured using an "all-printed" process technology.
摘要翻译：要解决的问题：提供使用低成本高通量打印技术的非易失性存储单元。解决方案：非易失性存储单元包括：第一和第二半导体岛以相同的水平位置隔开预定距离，第一半岛岛2提供控制栅极，第二半岛岛3提供源极和漏极端子; 在第一半导体岛2的至少一部分上的栅介质层4; 在第二半导体岛的至少一部分上的隧道介电层5; 至少部分栅极电介质层4和隧道电介质层5上的浮栅7; 以及与控制栅极2和源极和漏极端子电接触的金属层。在一个有利的实施例中，可以使用“全印刷”工艺技术来制造非易失性存储单元。版权所有（C）2012，JPO＆INPIT

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