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1. 发明申请

WO2010103452A1 LOW-FREQUENCY FILTER COMPRISING MAXWELL-WAGNER STACK 审中-公开
标题翻译：包含MAXWELL-WAGNER STACK的低频滤波器
公开(公告)号：WO2010103452A1
公开(公告)日：2010-09-16
申请号：PCT/IB2010/050985
申请日：2010-03-08
申请人： NXP B.V. , KOCHUPURACKAL, Jinesh Balakrishna Pillai , BESLING, Willem Frederik Adrianus
发明人： KOCHUPURACKAL, Jinesh Balakrishna Pillai , BESLING, Willem Frederik Adrianus
IPC分类号： H03H5/00
CPC分类号： H01L28/40
摘要： The present invention relates to an electric low-pass filter, comprising a layer stack formed by a first electrode layer, a first dielectric layer adjacent to the first electrode layer, a second dielectric layer adjacent to the first dielectric layer, and a second electrode layer adjacent to the second dielectric layer. The first dielectric layer is made of a material and has a layer thickness, which in combination allow a tunellingof first charge carriers of a first charge-carrier polarity from the first electrode layer through the first dielectric layer to an interface between the first and second dielectric layers, under application of a first tunneling voltage of a first voltage polarity between the first and second electrode layers, and a tunneling of second charge carriers of an opposite second charge-carrier polarity from the first electrode layer through the first delectric layer to the interface between the first and second dielectric layers under application of a second tunneling voltage of a second voltage polarity between the first and second electrodes, which second voltage polarity is oppsosite to the first voltage polarity. The second charge carriers have a second charge-carrier mobility in the first dielectric material, which is lower than the first charge-carrier mobility of the first charge carriers.
摘要翻译：本发明涉及一种电气低通滤波器，包括由第一电极层形成的层叠层，与第一电极层相邻的第一电介质层，与第一电介质层相邻的第二电介质层和第二电极层邻近第二电介质层。第一电介质层由材料制成并且具有层厚度，其组合允许第一电荷载体极性的第一电荷载流子从第一电极层通过第一介电层向第一和第二电介质之间的界面在第一和第二电极层之间施加第一电压极性的第一隧道电压的第二电荷载流子和相反的第二电荷载流子极性的第二电荷载流子从第一电极层穿过第一电介质层到界面在第一和第二电极之间施加第二电压极性的第二隧穿电压，该第二电压极性与第一电压极性相对。第二电荷载体在第一介电材料中具有第二电荷载流子迁移率，其低于第一载流子的第一电荷载流子迁移率。

2. 发明申请

WO2010010520A3 INTEGRATED SEEBECK DEVICE 审中-公开
公开(公告)号：WO2010010520A3
公开(公告)日：2010-01-28
申请号：PCT/IB2009/053177
申请日：2009-07-22
申请人： NXP B.V. , KOCHUPURACKAL, Jinesh Balakrishna Pillai , KLOOTWIJK, Johan Hendrik
发明人： KOCHUPURACKAL, Jinesh Balakrishna Pillai , KLOOTWIJK, Johan Hendrik
IPC分类号： H01L27/16 , H01L35/34
摘要： An integrated device includes a Seebeck device (4) integrated in a substrate (2). A heat-generating device (6) warms up the Seebeck device (4) generating electrical power. The Seebeck device powers a further device which may be a micro-battery (8) likewise integrated in the substrate or a Peltier effect device for cooling another heat- generating device.

3. 发明申请

WO2009153728A1 THROUGH WAFER VIA FILLING METHOD 审中-公开
标题翻译：通过填充方法
公开(公告)号：WO2009153728A1
公开(公告)日：2009-12-23
申请号：PCT/IB2009/052541
申请日：2009-06-15
申请人： NXP B.V. , KOCHUPURACKAL, Jinesh Balakrishna Pillai , LAMY, Yann Pierre Roger
发明人： KOCHUPURACKAL, Jinesh Balakrishna Pillai , LAMY, Yann Pierre Roger
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L21/76898 , H05K1/0306 , H05K3/4038 , H05K2201/0329 , H05K2203/107 , H05K2203/128
摘要： A method is disclosed of filling a via (12) extending through a wafer (10), preferably a silicon wafer. The method comprises covering the via (12) by depositing a portion (16) of a conductive material over the via; and filling the via (12) with the conductive material by irradiating the portion (16) with a laser (20) during a predefined time period, thereby bringing the conductive material in a fluid state, e.g. by melting the conductive material.
摘要翻译：公开了一种填充延伸穿过晶片（10），优选硅晶片的通孔（12）的方法。该方法包括通过在通孔上沉积导电材料的部分（16）来覆盖通孔（12）; 以及通过在预定时间段内用激光器（20）照射所述部分（16）来填充所述通孔（12），从而使所述导电材料处于流体状态，例如，通过熔化导电材料。

4. 发明申请

WO2010018490A2 A PHOTOVOLTAIC CELL AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光伏电池及其制造方法
公开(公告)号：WO2010018490A2
公开(公告)日：2010-02-18
申请号：PCT/IB2009/053408
申请日：2009-08-05
申请人： NXP B.V. , FURUKAWA, Yukiko , PASVEER, Frank , KLOOTWIJK, Johan , KOCHUPURACKAL, Jinesh
发明人： FURUKAWA, Yukiko , PASVEER, Frank , KLOOTWIJK, Johan , KOCHUPURACKAL, Jinesh
IPC分类号： H01L31/0384
CPC分类号： H01L31/03529 , H01L31/03845 , Y02E10/50
摘要： A photovoltaic cell (100) which comprises a semiconductive matrix (102) of a first type of conductivity, and a plurality of semiconductive nanoclusters (104) of a second type of conductivity which differs from the first type of conductivity which are at least partially embedded in the semiconductive matrix (102) so that a pn-junction (106) is formed between the plurality of semiconductive nanoclusters (104) and the semiconductive matrix (102).
摘要翻译：一种光电池（100），其包括第一导电类型的半导体基体（102）和与第一导电类型不同的第二类导电性的多个半导体纳米团簇（104），所述半导体纳米团簇至少部分地嵌入在半导体基体（102）中，使得在多个半导体纳米簇（104）和半导体基体（102）之间形成pn结（106）。

5. 发明申请

WO2009150600A1 ENHANCED SURFACE AREA STRUCTURE 审中-公开
标题翻译：增强表面结构
公开(公告)号：WO2009150600A1
公开(公告)日：2009-12-17
申请号：PCT/IB2009/052419
申请日：2009-06-08
申请人： NXP B.V. , KONINKLIJKE PHILIPS ELECTRONICS N.V. , KOCHUPURACKAL, Jinesh Balakrishna Pillai , ROOZEBOOM, Freddy , KLOOTWIJK, Johan Hendrik , DEKKERS, Wouter
发明人： KOCHUPURACKAL, Jinesh Balakrishna Pillai , ROOZEBOOM, Freddy , KLOOTWIJK, Johan Hendrik , DEKKERS, Wouter
IPC分类号： H01L21/02 , H01L29/94
CPC分类号： H01L29/945 , H01L28/84
摘要： A structure with a higher surface area than the area occupied by the structure has a number of pillars (2), the pillars being hollow having an opening (6) extending into the pillar. An intermediate layer is provided on the surface of the pillar and an electrode fills the spaces between the pillars (2). The structure has an enhanced structural stability reducing potential damage especially during manufacture. The structure may be used for capacitors or batteries, for example.
摘要翻译：具有比结构占据的面积更高的表面积的结构具有多个柱（2），柱是中空的，具有延伸到柱中的开口（6）。在柱的表面上设置中间层，并且电极填充柱（2）之间的空间。该结构具有增强的结构稳定性，减少潜在的损害，特别是在制造过程中。例如，该结构可以用于电容器或电池。

6. 发明申请

WO2010018490A3 A PHOTOVOLTAIC CELL AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：一种光伏电池及其制造方法
公开(公告)号：WO2010018490A3
公开(公告)日：2011-02-17
申请号：PCT/IB2009053408
申请日：2009-08-05
申请人： NXP BV , FURUKAWA YUKIKO , PASVEER FRANK , KLOOTWIJK JOHAN , KOCHUPURACKAL JINESH
发明人： FURUKAWA YUKIKO , PASVEER FRANK , KLOOTWIJK JOHAN , KOCHUPURACKAL JINESH
IPC分类号： H01L31/0384
CPC分类号： H01L31/03529 , H01L31/03845 , Y02E10/50
摘要： A photovoltaic cell (100) which comprises a semiconductive matrix (102) of a first type of conductivity, and a plurality of semiconductive nanoclusters (104) of a second type of conductivity which differs from the first type of conductivity which are at least partially embedded in the semiconductive matrix (102) so that a pn-junction (106) is formed between the plurality of semiconductive nanoclusters (104) and the semiconductive matrix (102).
摘要翻译：一种光电池（100），其包括第一导电类型的半导体基体（102）和第二导电类型的多个半导体纳米团簇（104），其不同于第一类型的导电性，其至少部分地被嵌入在半导体矩阵（102）中，使得在多个半导体纳米簇（104）和半导体矩阵（102）之间形成pn结（106）。

7. 发明申请

WO2010038216A1 PHASE CHANGE MEMORY CELLS AND FABRICATION THEREOF 审中-公开
标题翻译：相变记忆细胞及其制备
公开(公告)号：WO2010038216A1
公开(公告)日：2010-04-08
申请号：PCT/IB2009/054313
申请日：2009-10-02
申请人： NXP B.V. , INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , KOCHUPURACKAL, Jinesh, B. P. , WOLTERS, Robertus, A. M. , ZANDT, Michael, A. A.
发明人： KOCHUPURACKAL, Jinesh, B. P. , WOLTERS, Robertus, A. M. , ZANDT, Michael, A. A.
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/12 , H01L45/1675
摘要： A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (10). A contact (15) made of phase change memory material may also be provided. The dielectric barrier (12) is substantially uniform e.g. of substantially uniform thickness, e.g. ≥ 5nm.
摘要翻译：相变存储器单元，例如线电池（2）及其制造，所述电池包括：两个电极（6,8）; 相变记忆材料（10）和电介质阻挡层（12）。电介质势垒（12）被布置成提供电子隧穿，例如 Fowler-Nordheim隧道，到相变记忆材料（10）。还可以提供由相变记忆材料制成的触点（15）。电介质势垒（12）基本上是均匀的基本均匀的厚度，例如 = 5nm。

8. 发明申请

WO2010023575A1 A CAPACITOR AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电容器及其制造方法
公开(公告)号：WO2010023575A1
公开(公告)日：2010-03-04
申请号：PCT/IB2009/053532
申请日：2009-08-11
申请人： NXP B.V. , FURUKAWA, Yukiko , KOCHUPURACKAL, Jinesh Balakrishna Pillai , KLOOTWIJK, Johan Hendrik , PASVEER, Frank
发明人： FURUKAWA, Yukiko , KOCHUPURACKAL, Jinesh Balakrishna Pillai , KLOOTWIJK, Johan Hendrik , PASVEER, Frank
IPC分类号： H01G4/10 , H01G4/12 , H01G4/20
CPC分类号： H01G4/1227 , H01G4/10 , H01G4/20
摘要： A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.
摘要翻译：一种电容器（110），其中所述电容器（110）包括电容器电介质（112），所述电容器电介质（112）包括介电常数的第一值的介电矩阵（114）和介电常数的第二值的多个纳米团簇（116）比第一介电常数值至少部分地嵌入介质矩阵（114）中，其中多个纳米团簇（116）通过自发成核形成在电介质基体（114）中。

9. 发明申请

WO2010010520A2 INTEGRATED SEEBECK DEVICE 审中-公开
标题翻译：集成SEEBECK设备
公开(公告)号：WO2010010520A2
公开(公告)日：2010-01-28
申请号：PCT/IB2009053177
申请日：2009-07-22
申请人： NXP BV , KOCHUPURACKAL JINESH BALAKRISHNA PILLAI , KLOOTWIJK JOHAN HENDRIK
发明人： KOCHUPURACKAL JINESH BALAKRISHNA PILLAI , KLOOTWIJK JOHAN HENDRIK
IPC分类号： H01L27/16 , H01L35/34
CPC分类号： H01L35/34 , H01L27/16 , H01L33/645
摘要： An integrated device includes a Seebeck device (4) integrated in a substrate (2). A heat-generating device (6) warms up the Seebeck device (4) generating electrical power. The Seebeck device powers a further device which may be a micro-battery (8) likewise integrated in the substrate or a Peltier effect device for cooling another heat- generating device.
摘要翻译：集成器件包括集成在衬底（2）中的塞贝克器件（4）。发热装置（6）加热了产生电力的塞贝克装置（4）。塞贝克装置为另一个可能是同样集成在基板中的微电池（8）或用于冷却另一个发热装置的珀尔帖效应装置的另一装置供电。

10. 发明申请

WO2009133500A1 METHOD OF FORMING A NANOCLUSTER-COMPRISING DIELECTRIC LAYER AND DEVICE COMPRISING SUCH A LAYER 审中-公开
标题翻译：形成包含电介质层的纳米聚合物的方法和包含这种层的器件
公开(公告)号：WO2009133500A1
公开(公告)日：2009-11-05
申请号：PCT/IB2009/051656
申请日：2009-04-22
申请人： NXP B.V. , KOCHUPURACKAL, Jinesh,, B., P. , BESLING, Wim , KLOOTWIJK, Johan, H. , WOLTERS, Robertus, A., M. , ROOZEBOOM, Freddy
发明人： KOCHUPURACKAL, Jinesh,, B., P. , BESLING, Wim , KLOOTWIJK, Johan, H. , WOLTERS, Robertus, A., M. , ROOZEBOOM, Freddy
IPC分类号： H01L21/28 , C23C14/08 , C23C16/40 , H01L21/314 , H01L29/423 , H01L29/51
CPC分类号： H01L29/792 , B82Y10/00 , C23C16/30 , C23C16/45531 , H01L21/28273 , H01L21/28282 , H01L21/3141 , H01L29/42332 , H01L29/7883
摘要： A method of forming a dielectric layer (330) on a further layer (114, 320) of a semiconductor device (300) is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer (114, 320), the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei (335) within the dielectric layer (330) formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallicinnature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities. Such a dielectric layer is particularly suitable for use in semiconductor devices such as non-volatile memories.
摘要翻译：公开了一种在半导体器件（300）的另一层（114,320）上形成介电层（330）的方法。该方法包括在另一层（114,320）上沉积电介质前体化合物和另外的前体化合物，所述电介质前体化合物包含由钇和镧系元素组成的组中的金属离子，并且所述另外的前体化合物包含由IV族和V族金属组成的组中的金属离子; 以及分别将所述电介质前体化合物和所述另外的前体化合物化学转化为电介质化合物和另外的化合物，所述另外的化合物在所述转化成由所述介电层（330）形成的所述介电层（330）内的多个纳米团簇核（335）中自组装第一电介质前体化合物。纳米团簇可以是电介质或金属材料。因此，形成具有优异的电荷俘获能力的电介质层。这种电介质层特别适用于诸如非易失性存储器的半导体器件。

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