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1. 发明申请

WO2012011020A3 AQUEOUS ALKALINE CLEANING COMPOSITIONS AND METHODS OF THEIR USE 审中-公开
标题翻译：水性碱性清洁组合物及其使用方法
公开(公告)号：WO2012011020A3
公开(公告)日：2012-03-15
申请号：PCT/IB2011053099
申请日：2011-07-12
申请人： BASF SE , BASF CHINA CO LTD , MELLIES RAIMUND , KLIPP ANDREAS
发明人： MELLIES RAIMUND , KLIPP ANDREAS
IPC分类号： C11D3/34 , C11D7/32 , C11D7/34 , H01L21/02
CPC分类号： C11D3/349 , C11D1/345 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/0073 , C11D3/06 , C11D3/2068 , C11D3/2086 , C11D3/30 , C11D3/3757 , C11D3/378 , C11D11/0017 , C11D11/0041 , C11D11/0047 , C11D11/0064 , H01L21/02074 , H05K3/1208 , H05K2203/0793
摘要： Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.
摘要翻译：所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C）选自具有至少两个伯氨基的脂族和脂环族胺和具有至少一个羟基的脂族和脂环族胺的螯合和/或腐蚀抑制剂，（D）选自炔属的非离子表面活性剂醇，烷氧基乙炔醇和烷氧基化脱水山梨糖醇单羧酸单酯; 使用碱性清洁组合物来处理用于制造电气和光学装置的基板; 以及用于处理用于制造使用所述含水碱性清洁组合物的电气和光学装置的基板的方法。

2. 发明申请

WO2011012559A2 POST ION IMPLANT STRIPPER FOR ADVANCED SEMICONDUCTOR APPLICATION 审中-公开
标题翻译：适用于高级半导体应用的离子注入式剥离器
公开(公告)号：WO2011012559A2
公开(公告)日：2011-02-03
申请号：PCT/EP2010/060762
申请日：2010-07-26
申请人： BASF SE , CHEN, ChienShin , SHEN, MeiChin , CHAN, ChiaHao , KLIPP, Andreas
发明人： CHEN, ChienShin , SHEN, MeiChin , CHAN, ChiaHao , KLIPP, Andreas
IPC分类号： H01L21/311 , G03F7/42
CPC分类号： H01L21/31133 , C11D11/0047 , G03F7/425
摘要： The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free ( 2 O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.
摘要翻译：本发明涉及基本上无水的光刻胶剥离组合物。特别地，本发明涉及用于在离子注入工艺之后除去光刻胶的基本上无水的光刻胶剥离组合物，其包含：（a）胺，（b）有机溶剂A和（c）共溶剂其中该组合物基本上不含水（<3wt％H 2 O）。本发明还提供了通过使用本发明的组合物进行离子后注入剥离的方法。

3. 发明申请

WO2012101545A1 USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50NM 审中-公开
标题翻译：使用具有三个短链全球化组合的表面活性剂制造具有下面的线形尺寸的图案的集成电路50NM
公开(公告)号：WO2012101545A1
公开(公告)日：2012-08-02
申请号：PCT/IB2012/050218
申请日：2012-01-17
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KLIPP, Andreas , MAYER, Dieter
发明人： KLIPP, Andreas , MAYER, Dieter
IPC分类号： C09K13/08 , G03F7/32 , G03F7/20
CPC分类号： H01L21/0337 , C11D11/0047 , G03F7/0046 , G03F7/0048 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresistscomprisingpatterns having line-space dimensions below 50 nm and aspect ratios >3.By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.
摘要翻译：使用表面活性剂A，其1重量％的水溶液表现出<25mN / m的静态表面张力，所述表面活性剂A含有至少三个短链全氟化基团，Rf选自三氟甲基，五氟乙基， 1-七氟丙基，2-七氟丙基，七氟异丙基和五氟硫烷基; 用于制造集成电路，其包括图形线形空间尺寸低于50nm并且纵横比> 3; 以及使用在浸渍光刻胶层中的表面活性剂A，暴露于光化辐射的光致抗蚀剂层，曝光的光致抗蚀剂层的显影剂溶液和/或具有线空间尺寸低于50nm的显影图案化光刻胶的化学冲洗溶液的光刻工艺，以及方面比例> 3。通过表面活性剂A的方式，防止图案塌陷，线边缘粗糙度降低，防止和去除水印缺陷，并通过去除颗粒来减少缺陷。

4. 发明申请

WO2010127941A1 RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES 审中-公开
标题翻译：电阻剥离组合物和制造电气装置的方法
公开(公告)号：WO2010127941A1
公开(公告)日：2010-11-11
申请号：PCT/EP2010/055202
申请日：2010-04-20
申请人： BASF SE , KLIPP, Andreas
发明人： KLIPP, Andreas
IPC分类号： G03F7/42 , H01L21/02
CPC分类号： G03F7/425 , H01L21/02063 , H01L21/31133
摘要： A liquid composition being free from N-alkylpyrrolidones and hydroxyl amine and hydroxyl amine derivatives comprising (A) at least two polar organic solvents, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophobe groups, and (B) at least one quaternary ammonium hydroxide, a method for its preparation, a method for manufacturing electrical devices and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.
摘要翻译：不含N-烷基吡咯烷酮和羟胺和羟胺衍生物的液体组合物，其包含（A）至少两种极性有机溶剂，所述极性有机溶剂选自溶剂为0.06至4重量％溶解的四甲基氢氧化铵（B）中，重量百分比基于各试验溶液（AB）的完整重量，对于含有深紫外线吸收发色团组的30nm厚聚合物屏障抗反射层，在50℃下的恒定去除速率和（ B）至少一种季铵氢氧化物，其制备方法，用于制造电子器件的方法及其在消除负色调和正色调光致抗蚀剂和后蚀刻残留物中的用途，用于制造3D叠层集成电路和3D晶片级包装通过图案化通过硅气泡和/或通过电镀和碰撞。

5. 发明申请

WO2010084033A2 COMPOSITION FOR POST CHEMICAL-MECHANICAL POLISHING CLEANING 审中-公开
标题翻译：化学机械抛光清洗组合物
公开(公告)号：WO2010084033A2
公开(公告)日：2010-07-29
申请号：PCT/EP2010/050078
申请日：2010-01-06
申请人： BASF SE , HUNG, Ting Hsu , KLIPP, Andreas , SU, Kuo Chen , TU, Sheng Hung
发明人： HUNG, Ting Hsu , KLIPP, Andreas , SU, Kuo Chen , TU, Sheng Hung
CPC分类号： C11D7/3209 , C11D7/04 , C11D7/263 , C11D7/3281 , C11D7/34 , C11D7/5004 , C11D7/5022 , C11D11/0047 , H01L21/02074
摘要： The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
摘要翻译：本发明涉及用于后化学机械抛光（CMP）清洗的组合物。该组合物是碱性的，其可以在CMP之后去除晶片表面上的唑类腐蚀抑制剂。该组合物可有效去除唑化合物，增加Cu表面的润湿性，并显着改善CMP后的缺陷去除。

6. 发明申请

WO2012127336A1 AQUEOUS, NITROGEN-FREE CLEANING COMPOSITION, PREPARATION AND USE THEREOF 审中-公开
标题翻译：无水，无氮清洁组合物，其制备和使用
公开(公告)号：WO2012127336A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/050912
申请日：2012-02-28
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KLIPP, Andreas , RAMAN, Vijay Immanuel , VENKATARAMAN, Shyam Sundar , MELLIES, Raimund , ZHONG, Mingjie
发明人： KLIPP, Andreas , RAMAN, Vijay Immanuel , VENKATARAMAN, Shyam Sundar , MELLIES, Raimund , ZHONG, Mingjie
IPC分类号： B08B3/04
CPC分类号： H01L21/02074 , C11D1/662 , C11D1/72 , C11D1/721 , C11D1/722 , C11D1/825 , C11D3/0073 , C11D3/2041 , C11D3/2065 , C11D3/2082 , C11D3/3757 , C11D11/0047 , G03F7/422 , G03F7/426
摘要： Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.
摘要翻译：提供了无水的无氮清洁组合物，其制备和用途。具有5至8的pH的组合物包含（A）两亲性非离子，水溶性或水分散性表面活性剂和（B）选自具有至少3个羧酸基团的多元羧酸的金属螯合剂。该组合物用于从半导体衬底去除残留物和污染物。

7. 发明申请

WO2011012559A3 POST ION IMPLANT STRIPPER FOR ADVANCED SEMICONDUCTOR APPLICATION 审中-公开
标题翻译：用于高级半导体应用的离子植入式剥离器
公开(公告)号：WO2011012559A3
公开(公告)日：2011-03-24
申请号：PCT/EP2010060762
申请日：2010-07-26
申请人： BASF SE , CHEN CHIENSHIN , SHEN MEICHIN , CHAN CHIAHAO , KLIPP ANDREAS
发明人： CHEN CHIENSHIN , SHEN MEICHIN , CHAN CHIAHAO , KLIPP ANDREAS
IPC分类号： H01L21/311 , G03F7/42
CPC分类号： H01L21/31133 , C11D11/0047 , G03F7/425
摘要： The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.
摘要翻译：本发明涉及基本上无水的光致抗蚀剂剥离组合物。特别地，本发明涉及用于在离子注入工艺之后去除光致抗蚀剂的基本上无水的光致抗蚀剂剥离组合物，其包括：（a）胺，（b）有机溶剂A和（c）共溶剂，其中所述组合物基本上是无水的（20）。本发明还提供了通过使用本发明的组合物进行离子后植入剥离的方法。

8. 发明申请

WO2010127943A1 RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES 审中-公开
标题翻译：电阻剥离组合物和制造电气装置的方法
公开(公告)号：WO2010127943A1
公开(公告)日：2010-11-11
申请号：PCT/EP2010/055205
申请日：2010-04-20
申请人： BASF SE , KLIPP, Andreas
发明人： KLIPP, Andreas
IPC分类号： G03F7/42 , H01L21/02
CPC分类号： G03F7/425 , G03F7/20 , H01L21/02063 , H01L21/31133
摘要： A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50°C of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to
摘要翻译：不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPa·s，通过旋转粘度测定测量，并包含基于组合物的完全重量（A）在溶解的四甲基氢氧化铵（B）存在下显示的极性有机溶剂的40至99.95重量％，对于含有深紫外线吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率（ B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

9. 发明申请

WO2012127342A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS 审中-公开
标题翻译：用于制造集成电路装置的方法，光学装置，微型计算机和机械精密装置，具有50纳米的空间尺寸的图案材料层和较小的材料层
公开(公告)号：WO2012127342A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/050946
申请日：2012-02-29
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KLIPP, Andreas , OETTER, Günter , MONTERO PANCERA, Sabrina , HONCIUC, Andrei , BITTNER, Christian
发明人： KLIPP, Andreas , OETTER, Günter , MONTERO PANCERA, Sabrina , HONCIUC, Andrei , BITTNER, Christian
IPC分类号： G03F7/20 , C11D1/00
CPC分类号： H01L21/3083 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.
摘要翻译：一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法，所述方法包括以下步骤：（1）提供具有线空间尺寸为50nm以下且具有> 2的纵横比的图案化材料层的衬底 ; （2）通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面，或潜在的阳离子基团，至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和（3）从与基板的接触中除去无水的无水溶液S.

10. 发明申请

WO2011000758A1 AQUEOUS ALKALINE CLEANING COMPOSITIONS AND METHODS OF THEIR USE 审中-公开
标题翻译：水性碱性清洁组合物及其使用方法
公开(公告)号：WO2011000758A1
公开(公告)日：2011-01-06
申请号：PCT/EP2010/058959
申请日：2010-06-24
申请人： BASF SE , MELLIES, Raimund , KLIPP, Andreas
发明人： MELLIES, Raimund , KLIPP, Andreas
IPC分类号： C11D3/33 , C11D3/34 , C11D7/32 , C11D7/34 , C11D11/00 , G03F7/42 , H01L21/02
CPC分类号： C11D1/62 , C11D3/34 , C11D7/3209 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02074
摘要： The aqueous alkaline cleaning composition comprising (A) at least one thioamino acid having at least one secondary or tertiary amino group and at least one mercapto group and (B) at least one quaternary ammonium hydroxide; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.
摘要翻译：含水碱性清洁组合物包含（A）至少一种具有至少一个仲或叔氨基和至少一个巯基的硫代氨基酸和（B）至少一种氢氧化季铵盐; 使用碱性清洁组合物来处理可用于制造电气和光学器件的衬底; 以及用于处理用于制造使用所述碱性水性清洁组合物的电气和光学装置的基板的方法。

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