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2. 发明申请

WO2010011036A3 PHOTONIC CRYSTAL DEVICE PRODUCED BY A WET PROCESS, AND A PRODUCTION METHOD THEREOF 审中-公开
标题翻译：由湿法生产的光子晶体装置及其生产方法
公开(公告)号：WO2010011036A3
公开(公告)日：2010-04-15
申请号：PCT/KR2009003703
申请日：2009-07-07
申请人： KOREA ELECTRO TECH RES INST , KIM JUNG-IL , JEON SEOK-GY , JIN YUN-SIK , KIM GEUN-JU , SON CHAE-HWA , PARK SI-HYUN , HAN SEONG TAE , KIM JONG UK
发明人： KIM JUNG-IL , JEON SEOK-GY , JIN YUN-SIK , KIM GEUN-JU , SON CHAE-HWA , PARK SI-HYUN , HAN SEONG TAE , KIM JONG UK
IPC分类号： H01L21/306 , H01L21/20 , H01L21/3063
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/13
摘要： The present invention relates to a method for producing a photonic crystal device having a photonic crystal structure which can be used in photonic crystal devices such as optical waveguides, resonators, filters, antennas and Smith-Purcell free electron lasers which can be employed in a desired electromagnetic waveband by application of semiconductor processing technology and of an anisotropic wet process which uses the crystallization direction (100) of a silicon wafer; for producing a photonic crystal device which comprises a photonic crystal part having a periodic array of silicon crystals having a predetermined form and a covering part for reducing optical losses in the axial direction to be used as an optical waveguide or a resonator, thereby to be capable of being applied in a desired electromagnetic band; and which can have the conductive photonic-crystal characteristics by not coating the silicon crystal with an electrically conductive material and the metal photonic-crystal characteristics by coating the silicon crystal with an electrically conductive material. This production method makes it possible to mass-produce photonic crystal structures of relatively low cost and substantial height within a short time.
摘要翻译：本发明涉及一种用于制造具有光子晶体结构的光子晶体器件的方法，该光子晶体结构可以用于光子晶体器件，例如光波导，谐振器，滤波器，天线和Smith-Purcell自由电子激光器，其可以用于期望的通过应用半导体处理技术的电磁波段以及使用硅晶片的结晶方向（100）的各向异性湿法工艺; 用于制造光子晶体器件，该光子晶体器件包括具有预定形状的具有周期性的硅晶体阵列的光子晶体部分和用于降低沿轴向的光学损耗以用作光波导或谐振器的覆盖部分，从而能够应用于所需的电磁波段; 并且通过不用导电材料涂覆硅晶体而具有导电光子晶体特性，并且通过用导电材料涂覆硅晶体而具有金属光子晶体特性。该制造方法能够在短时间内批量生产成本相对较低且高度相当高的光子晶体结构。

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