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1. 发明专利

TW200841460A 利用矽接觸孔對互補式金氧半導體圖像感測器之晶圓級封裝以及其製造方法 WAFER LEVEL PACKAGE USING SILICON VIA CONTACTS FOR CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 审中-公开
简体标题：利用硅接触孔对互补式金属氧化物半导体图像传感器之晶圆级封装以及其制造方法 WAFER LEVEL PACKAGE USING SILICON VIA CONTACTS FOR CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
公开(公告)号：TW200841460A
公开(公告)日：2008-10-16
申请号：TW096113243
申请日：2007-04-14
申请人：金龍成 KIM, YOUNG SUNG , 朴太錫 PARK, TAE-SEOK
发明人：金龍成 KIM, YOUNG SUNG , 朴太錫 PARK, TAE-SEOK
IPC分类号： H01L
CPC分类号： H01L2224/11
摘要：本發明係關於一種利用矽通孔接點之CMOS圖像感測器晶圓層級封裝及其製造方法。此CMOS圖像感測器晶圓層級封裝包括:一晶圓,其上有多個圖像感測器(包括數個電極接墊)形成;一透明基板,其係黏附在該晶圓的正面;一通孔,其係從該晶圓的背面貫穿到在該正面數個電極接墊下方而形成;一鈍化層,其係在除了該通孔內之該數個電極接墊的下方以及整個該晶圓之背面以外的其餘部位形成;一通孔接點,其係在該通孔內形成;及一銲錫凸塊,其係在該晶圓背面的該通孔接點上形成。
简体摘要：本发明系关于一种利用硅通孔接点之CMOS图像传感器晶圆层级封装及其制造方法。此CMOS图像传感器晶圆层级封装包括:一晶圆,其上有多个图像传感器(包括数个电极接垫)形成;一透明基板,其系黏附在该晶圆的正面;一通孔,其系从该晶圆的背面贯穿到在该正面数个电极接垫下方而形成;一钝化层,其系在除了该通孔内之该数个电极接垫的下方以及整个该晶圆之背面以外的其余部位形成;一通孔接点,其系在该通孔内形成;及一焊锡凸块,其系在该晶圆背面的该通孔接点上形成。

2. 发明公开

KR20180039310A 지역 특성을 살린 그림이나 내용을 용이하게 교체할 수 있는 광고물 부착방지 시트 审中-公开
公开(公告)号：KR20180039310A
公开(公告)日：2018-04-18
申请号：KR20160130420
申请日：2016-10-10
申请人： KIM YOUNG OK , HAN JEONG IL , KIM YOUNG SUNG
发明人： KIM YOUNG OK , KIM YOUNG SUNG , HAN JEONG IL
IPC分类号： G09F19/22 , B08B17/04 , G09F3/02 , G09F3/10 , G09F7/18
摘要： 본발명은지역특성을살린그림이나내용을용이하게교체할수 있는광고물부착방지시트에관한것으로서, 전신주와같은공공대상물에불법광고물을무단부착하는것을방지하면서동시에지역특성을살린그림이나내용을부분적으로교체할수 있는 "지역특성을살린그림이나내용을용이하게교체할수 있는광고물부착방지시트"에관한것이다. 본발명의일실시예에따른지역특성을살린그림이나내용을용이하게교체할수 있는광고물부착방지시트는, 합성수지사또는금속사중 어느하나에의해제조된메쉬(mesh)를원단으로한 메인시트(main sheet)와, 합성수지사또는금속사중 어느하나에의해제조된메쉬를원단으로메인시트보다두께가얇고크기가작은사이즈로메인시트표면에부착되되탈착이가능한접착후면을가지는리무버블시트(removable sheet)를구비한다. 또한, 메인시트및 리무버블시트의상면에자외선(UV)에노출되면순간적으로굳는잉크를사용하여메인유브층을형성하되, 표면에디자인을미려하게함과더불어표현하고자하는문구또는그림이인쇄되어있고, 메쉬고유의엠보가살아나불법광고물부착을차단할수 있는두께로도포형성되며, 메인유브층의변색을방지할수 있도록열가소성메인우레탄수지층을형성함과동시에소수성과이형성이우수하여스티커점착제와의부착이전혀일어나지않는실리콘메인컴파운드층을이룬다. 또한, 리무버블시트를교체하고자할 때리무버블시트와동일한면적사이즈의리무버블부재를준비하여리무버블시트를떼어내고리무버블부재로교체할수 있다.

3. 发明申请

WO2008143461A3 WAFER LEVEL CHIP SCALE PACKAGE OF AN IMAGE SENSOR BY MEANS OF THROUGH HOLE INTERCONNECTION AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：通过孔互连的图像传感器的水平切片尺寸包装及其制造方法
公开(公告)号：WO2008143461A3
公开(公告)日：2009-01-15
申请号：PCT/KR2008002837
申请日：2008-05-21
申请人： PARK TAE-SEOK , KIM YOUNG SUNG
发明人： PARK TAE-SEOK , KIM YOUNG SUNG
IPC分类号： H01L21/60
CPC分类号： H01L27/14687 , H01L23/481 , H01L24/11 , H01L24/13 , H01L27/14618 , H01L27/14632 , H01L27/14636 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05171 , H01L2224/05644 , H01L2224/05647 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13025 , H01L2224/13099 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： The present invention relates to a wafer level chip scale package of an image sensor by means of through hole interconnection and a method for manufacturing the same, in which through hole-interconnected electrodes, through holes filled with metals, are induced to the back side of a wafer substrate. In this structure, a length of wiring can be minimized to decrease a power loss and speed up signal transfer. A wafer level chip scale package of an image sensor by means of through hole interconnection in accordance with one embodiment of the present invention comprises: an image sensor for converting light from outside to an electrical signal, the image sensor being located on the front side of a wafer substrate; the electrode pads for outputting the electrical signal made in the image sensor, the electrode pads being located on the wafer substrate and extending near or into a dicing street; a through hole-interconnected electrode for transferring the electrical signal outputted from the electrode pads to the back side of the wafer substrate; and bumps on the through hole interconnected electrode. We call the technology in the present invention as "J-connection technology".
摘要翻译：本发明涉及一种通过通孔互连的图像传感器的晶片级芯片级封装及其制造方法，其中通孔互连电极，填充有金属的通孔被诱导到晶圆基板。在这种结构中，可以使布线长度最小化以降低功率损耗并加速信号传输。根据本发明的一个实施例的通过通孔互连的图像传感器的晶片级芯片级封装包括：用于将光从外部转换成电信号的图像传感器，所述图像传感器位于晶圆基板; 所述电极焊盘用于输出在所述图像传感器中形成的电信号，所述电极焊盘位于所述晶片衬底上并且在切割街道附近或附近延伸; 用于将从电极焊盘输出的电信号传送到晶片衬底的背面的通孔互连电极; 并且在通孔互连电极上的凸块。我们将本发明中的技术称为“J连接技术”。

4. 发明申请

WO2012002677A2 HYBRID EXTINCTION-TYPE GAS CIRCUIT BREAKER FOR A GAS INSULATED SWITCHGEAR 审中-公开
标题翻译：气体绝缘开关的混合式灭弧气体断路器
公开(公告)号：WO2012002677A2
公开(公告)日：2012-01-05
申请号：PCT/KR2011004614
申请日：2011-06-24
申请人： HYUN DAI HEAVY IND CO LTD , KIM YOUNG SUNG , KWAK SUNG HYO , OH SI YEOL , CHOI BYUNG HWA
发明人： KIM YOUNG SUNG , KWAK SUNG HYO , OH SI YEOL , CHOI BYUNG HWA
IPC分类号： H01H33/76 , H01H33/18
CPC分类号： H01H33/7023
摘要： The present invention relates to a hybrid extinction-type gas circuit breaker, which can reliably eliminate an arc when a fault current is cut off, without a loss of pressure in the extinction gas. The hybrid extinction-type gas circuit breaker of the present invention comprises: a fixed unit having a fixed unit arc contact portion; and a moving unit including a cylinder, a piston arranged in the cylinder, a puffer chamber and a thermal expansion chamber formed by a separator wall, and an operating rod which passes through an interior of the piston and the cylinder, the moving unit further including a moving unit arc contact portion that can closely approach the fixed unit arc contact portion. A moving valve is arranged at one surface of the separator wall, wherein the moving valve includes a tight contact portion and a moving portion. The tight contact portion is movable by means of a difference in pressure, and is brought into tight contact with the separator wall. The moving portion extends from the tight contact portion, enables the operating rod to penetrate therethrough, and opens/closes the thermal expansion chamber.
摘要翻译：本发明涉及一种混合消光型气体断路器，其能够在故障电流被切断时可靠地消除电弧，而不会消耗气体中的压力损失。本发明的混合消弧型气体断路器包括：具有固定单位电弧接触部分的固定单元; 以及移动单元，其包括气缸，布置在气缸中的活塞，由分隔壁形成的缓冲室和热膨胀室以及穿过活塞和气缸的内部的操作杆，移动单元还包括移动单元电弧接触部分，其能够接近所述固定单元电弧接触部分。活动阀布置在分离器壁的一个表面处，其中活动阀包括紧密接触部分和移动部分。紧密接触部分能够通过压力而移动，并且与分隔壁紧密接触。移动部分从紧密接触部分延伸，使得操作杆能够穿过其中并且打开/关闭热膨胀室。

5. 发明申请

WO2008143461A2 WAFER LEVEL CHIP SCALE PACKAGE OF AN IMAGE SENSOR BY MEANS OF THROUGH HOLE INTERCONNECTION AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：通过孔互连的图像传感器的水平切片尺寸包装及其制造方法
公开(公告)号：WO2008143461A2
公开(公告)日：2008-11-27
申请号：PCT/KR2008/002837
申请日：2008-05-21
申请人： PARK, Tae-Seok , KIM, Young Sung
发明人： PARK, Tae-Seok , KIM, Young Sung
IPC分类号： H01L21/60
CPC分类号： H01L27/14687 , H01L23/481 , H01L24/11 , H01L24/13 , H01L27/14618 , H01L27/14632 , H01L27/14636 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05171 , H01L2224/05644 , H01L2224/05647 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13025 , H01L2224/13099 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： The present invention relates to a wafer level chip scale package of an image sensor by means of through hole interconnection and a method for manufacturing the same, in which through hole-interconnected electrodes, through holes filled with metals, are induced to the back side of a wafer substrate. In this structure, a length of wiring can be minimized to decrease a power loss and speed up signal transfer. A wafer level chip scale package of an image sensor by means of through hole interconnection in accordance with one embodiment of the present invention comprises: an image sensor for converting light from outside to an electrical signal, the image sensor being located on the front side of a wafer substrate; the electrode pads for outputting the electrical signal made in the image sensor, the electrode pads being located on the wafer substrate and extending near or into a dicing street; a through hole-interconnected electrode for transferring the electrical signal outputted from the electrode pads to the back side of the wafer substrate; and bumps on the through hole interconnected electrode. We call the technology in the present invention as "J-connection technology".
摘要翻译：本发明涉及一种通过通孔互连的图像传感器的晶片级芯片级封装及其制造方法，其中通孔互连电极，填充有金属的通孔被诱导到晶圆基板。在这种结构中，可以使布线长度最小化以降低功率损耗并加速信号传输。根据本发明的一个实施例的通过通孔互连的图像传感器的晶片级芯片级封装包括：用于将光从外部转换成电信号的图像传感器，所述图像传感器位于晶圆基板; 所述电极焊盘用于输出在所述图像传感器中形成的电信号，所述电极焊盘位于所述晶片衬底上并且在切割街道附近或附近延伸; 用于将从电极焊盘输出的电信号传送到晶片衬底的背面的通孔互连电极; 并且在通孔互连电极上的凸块。我们将本发明中的技术称为“J连接技术”。

6. 发明申请

WO2007111471A1 DIGITAL DEVICE AND METHOD FOR PROVIDING ADDITIONAL SERVICE BY USING THE SAME 审中-公开
标题翻译：用于通过使用附加服务提供附加服务的数字设备和方法
公开(公告)号：WO2007111471A1
公开(公告)日：2007-10-04
申请号：PCT/KR2007/001503
申请日：2007-03-27
申请人： KTFREETEL CO., LTD. , KIM, Young-Sung , AHN, Tae-Hyo , KIM, Yeon-Dae , SONG, Hae-Young , HWANG, Won-TaiK , LEE, Sang-Youn , JUNG, Yoon-Kyoo , LEE, Sun-Jung , KIM, Tae-Kyun
发明人： KIM, Young-Sung , AHN, Tae-Hyo , KIM, Yeon-Dae , SONG, Hae-Young , HWANG, Won-TaiK , LEE, Sang-Youn , JUNG, Yoon-Kyoo , LEE, Sun-Jung , KIM, Tae-Kyun
IPC分类号： H04B1/40 , G06Q99/00
CPC分类号： H04W4/60 , G06Q30/02 , H04L63/0853 , H04W8/18 , H04W12/06
摘要： A digital processing device capable of receiving an additional service is disclosed. In accordance with an embodiment of the present invention, there is providing a digital providing device including an input unit, inputting a signal; a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message; an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message; and a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with the present invention, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator.
摘要翻译：公开了能够接收附加服务的数字处理装置。根据本发明的实施例，提供一种数字提供装置，包括：输入单元，输入信号; 用户身份单元，存储通信运营商的身份码并生成通信网络访问请求消息; 附加服务身份单元，存储附加服务运营商的身份码并生成附加服务请求消息; 以及控制单元，生成允许选择性地驱动用户身份单元和附加服务身份单元之一的控制信号。根据本发明，除了由订阅的通信运营商提供的附加服务之外，数字处理设备的用户可以接收额外的服务，而不需要他或她订阅特定的通信运营商并且使用各种附加服务。

7. 发明申请

WO2007043718A1 WAFER LEVEL PACKAGE USING SILICON VIA CONTACTS FOR CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： CMOS图像传感器使用通过接触硅的波浪级封装及其制作方法
公开(公告)号：WO2007043718A1
公开(公告)日：2007-04-19
申请号：PCT/KR2005/003370
申请日：2005-10-11
申请人： PARK, Tae-Seok , KIM, Young Sung
发明人： PARK, Tae-Seok , KIM, Young Sung
IPC分类号： H01L27/146
CPC分类号： H01L27/14618 , H01L2224/13
摘要： The present invention relates to a wafer level package of a CMOS image sensor using silicon via contacts and a method of manufacturing the same. A wafer level package of a CMOS image sensor includes: a wafer where image sensor elements including a plurality of electrode pads are formed; a transparent substrate attached to a front side of the wafer; a via hole formed from a back side of the wafer to underneath of a plurality of electrode pads of the front side; a passivation layer formed on a remaining portion except the underneath of the electrode pads in the via hole and whole back side of the wafer; a via contact formed in the via hole; and a solder bump formed on the via contact of the back side of the wafer.
摘要翻译：本发明涉及使用硅通孔触点的CMOS图像传感器的晶片级封装及其制造方法。 CMOS图像传感器的晶片级封装包括：形成包括多个电极焊盘的图像传感器元件的晶片; 附着在晶片前侧的透明基板; 从所述晶片的背面形成在所述前侧的多个电极焊盘的下方的通路孔; 钝化层，其形成在晶片的通路孔和整个背面中除电极焊盘下方的剩余部分上; 形成在所述通孔中的通孔接点; 以及形成在晶片的背面的通孔接触部上的焊料凸块。

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