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1. 发明申请

WO2007046654A1 ADAPTIVELY COUPLED PLASMA SOURCE HAVING UNIFORM MAGNETIC FIELD DISTRIBUTION AND PLASMA CHAMBER HAVING THE SAME 审中-公开
标题翻译：具有均匀磁场分布的适应性耦合等离子体源和具有其的等离子体室
公开(公告)号：WO2007046654A1
公开(公告)日：2007-04-26
申请号：PCT/KR2006/004276
申请日：2006-10-20
申请人： ADAPTIVE PLASMA TECHNOLOGY CORP. , KIM, Nam Hun
发明人： KIM, Nam Hun
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/3211
摘要： Disclosed is an adaptively coupled plasma source having a uniform magnetic field distribution. The adaptively coupled plasma source includes a flat plate shaped bushing disposed above a reaction chamber in a center region of the reaction chamber, a plurality of upper coils extended from the bushing to be disposed above the reaction chamber, so as to spirally surround the bushing, and a plurality of side coils arranged around a sidewall portion of the reaction chamber to surround the reaction chamber.
摘要翻译：公开了具有均匀磁场分布的自适应耦合等离子体源。自适应耦合等离子体源包括设置在反应室的中心区域中的反应室上方的平板形衬套，从衬套延伸以设置在反应室上方的多个上部线圈，以便螺旋地围绕衬套，以及围绕反应室的侧壁部分布置以围绕反应室的多个侧线圈。

2. 发明申请

WO2006041250A1 PLASMA SOURCE FOR UNIFORM PLASMA DISTRIBUTION IN PLASM CHAMBER 审中-公开
标题翻译：等离子体等离子体分布的等离子体源
公开(公告)号：WO2006041250A1
公开(公告)日：2006-04-20
申请号：PCT/KR2005/001584
申请日：2005-05-27
申请人： ADAPTIVE PLASMA TECHNOLOGY CORPORATION , KIM, Nam-hun
发明人： KIM, Nam-hun
IPC分类号： H01L21/02
CPC分类号： H01J37/321
摘要： Disclosed herein is a plasma source which can create plasma within a reaction chamber to process a semiconductor wafer. The plasma source comprises a bushing equipped at an upper center of the reaction chamber, and a plurality of source coils linearly extending from the bushing to a periphery of the reaction chamber. With the linear source coils, it is possible to prevent deviation in magnetic field from the center to the periphery of the plasma source in the radial direction, resulting in easy control of critical dimensions and uniform etching rate both at the center and periphery of the reaction chamber.
摘要翻译：本文公开了一种能够在反应室内产生等离子体以处理半导体晶片的等离子体源。等离子体源包括配置在反应室的上部中心处的衬套和从衬套直线延伸到反应室的周边的多个源极线圈。对于线性源极线圈，可以防止沿着径向从等离子体源的中心到外围的磁场偏离，从而在反应的中心和周围容易地控制临界尺寸和均匀的蚀刻速率室。

3. 发明申请

WO2006004259A1 PLASMA CHAMBER HAVING PLASMA SOURCE COIL AND METHOD FOR ETCHING THE WAFER USING THE SAME 审中-公开
标题翻译：具有等离子体源线圈的等离子体室以及使用该方法蚀刻波形的方法
公开(公告)号：WO2006004259A1
公开(公告)日：2006-01-12
申请号：PCT/KR2005/000860
申请日：2005-03-24
申请人： ADAPTIVE PLASMA TECHNOLOGY CORPORATION , KIM, Nam-hun
发明人： KIM, Nam-hun
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/321
摘要： A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on the dome includes M unit coils corresponding to an integer greater than "2". The M unit coils having a predetermined turning number "n" indicative of a positive integer are extended from a center bushing having a predetermined radius at a center part, and are spirally arranged along a circumference of the center bushing, such that the plasma is formed in the reaction space. The edge bushing arranged between the dome of the chamber body and the plasma source coil, and is configured in the form of a cylindrical shape to overlap with an edge of the wafer arranged in the reaction space.
摘要翻译：具有等离子体源线圈的等离子体室包括室主体，等离子体源线圈和边缘衬套。室主体包括由侧壁，下外壁和上圆顶限制的反应空间，并形成等离子体。布置在圆顶上的等离子体源极线圈包括对应于大于“2”的整数的M个单元线圈。具有指示正整数的预定转数“M”的M单元线圈从中心部分具有预定半径的中心衬套延伸，并且沿着中心衬套的圆周螺旋地布置，使得等离子体形成在反应空间。布置在室主体的圆顶和等离子体源极线圈之间并且被配置成与晶片的边缘重叠的圆柱形形状的边缘衬套布置在反应空间中。

4. 发明申请

WO2006004281A1 PLASMA SOURCE COIL AND PLASMA CHAMBER USING THE SAME 审中-公开
标题翻译：等离子体源线圈和等离子体室
公开(公告)号：WO2006004281A1
公开(公告)日：2006-01-12
申请号：PCT/KR2005/000912
申请日：2005-03-29
申请人： ADAPTIVE PLASMA TECHNOLOGY CORPORATION , KIM, Nam-hun , LEE, Do-hyung , OH, Young-kun
发明人： KIM, Nam-hun , LEE, Do-hyung , OH, Young-kun
IPC分类号： H01L21/205
CPC分类号： H01J37/321
摘要： A plasma source coil includes a bushing arranged at a center part, and a plurality of unit coils arranged in the form of a concentric circle from a circumference of the bushing on the bases of the bushing. One end of each unit coil and one end of the bushing are commonly connected to a power-supply terminal, and the other end of each unit coil and the other end of the bushing are commonly connected to a ground terminal.
摘要翻译：等离子体源线圈包括布置在中心部分的衬套，以及多个单元线圈，其在衬套的基部上从衬套的圆周以同心圆的形式布置。每个单元线圈的一端和衬套的一端通常连接到电源端子，并且每个单元线圈的另一端和衬套的另一端共同连接到接地端子。

5. 发明申请

WO2005040897A2 SURFACE LIGHT SOURCE APPARATUS 审中-公开
标题翻译：表面光源装置
公开(公告)号：WO2005040897A2
公开(公告)日：2005-05-06
申请号：PCT/KR2004/002691
申请日：2004-10-21
申请人： SAMSUNG ELECTRONICS CO., LTD. , SAMSUNG CORNING CO., LTD. , KIM, Hyoung-Joo , BYUN, Jin-Seob , KIM, Dong-Woo , KIM, Nam-Hun , LEE, Sang-Yu
发明人： KIM, Hyoung-Joo , BYUN, Jin-Seob , KIM, Dong-Woo , KIM, Nam-Hun , LEE, Sang-Yu
IPC分类号： G02F
CPC分类号： H01J65/046 , G02F1/133604 , H01J61/305
摘要： A surface light source apparatus includes a main body having a space, and a plurality of space division members being disposed in the space so that the space division members are extended in a first direction and arranged in a second direction spaced apart from one another to divide the space into a plurality of light emitting spaces. The space division members include a plurality of connecting holes. At least two of the connecting holes have different heights from one another with respect to a bottom surface of the main body to have the light emitting spaces connected to one another through the connecting holes. The surface light source apparatus also includes a visible light emitting unit to generate a visible light in the light emitting spaces. Therefore, the brightness-uniformity of the surface light source apparatus and an image display quality of a display device are improved.
摘要翻译：面光源装置包括具有空间的主体，并且多个间隔构件设置在该空间中，使得分隔构件沿第一方向延伸并且沿彼此间隔开的第二方向布置以分开该空间成为多个发光空间。空间分割构件包括多个连接孔。至少两个连接孔相对于主体的底面彼此具有不同的高度，以使得通过连接孔相互连接的发光空间。表面光源装置还包括在发光空间中产生可见光的可见光发射单元。因此，提高了表面光源装置的亮度均匀性和显示装置的图像显示质量。

6. 发明申请

WO2006031010A1 ADAPTIVELY PLASMA SOURCE AND METHOD OF PROCESSING SEMICONDUCTOR WAFER USING THE SAME 审中-公开
标题翻译：适应性等离子体源及其使用半导体波长的方法
公开(公告)号：WO2006031010A1
公开(公告)日：2006-03-23
申请号：PCT/KR2005/001585
申请日：2005-05-27
申请人： ADAPTIVE PLASMA TECHNOLOGY CORPORATION , KIM, Nam-hun
发明人： KIM, Nam-hun
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01L21/308 , H05H1/46
摘要： An adaptive plasma source, and a method for processing a semiconductor wafer using the same are disclosed. The adaptive plasma source comprises a first planar hushing equipped at an upper center of a reaction chamber defining a reaction space for processing a semiconductor wafer so as to face a planar electrode equipped at a lower portion of the reaction chamber, and a coil assembly spirally extending from the first bushing at an upper portion of the reaction chamber and surrounding the first bushing. The adaptive plasma source allows an etching process to be performed by freely controlling etching characteristics of a coupled plasma source and an inductively coupled plasma source according to a method for processing a semiconductor wafer which will be performed, thereby enabling the etching process having different conditions to be performed in a single apparatus.
摘要翻译：公开了一种自适应等离子体源以及使用其的半导体晶片的处理方法。自适应等离子体源包括：在反应室的上部中心处配备的第一平面冲洗，其限定用于处理半导体晶片的反应空间，以面对设置在反应室的下部的平面电极;以及螺旋形延伸的线圈组件从第一衬套在反应室的上部并围绕第一衬套。自适应等离子体源允许通过根据用于处理将要执行的半导体晶片的方法的方法自由地控制耦合等离子体源和电感耦合等离子体源的蚀刻特性来执行蚀刻处理，由此使得具有不同条件的蚀刻工艺在单个装置中执行。

7. 发明申请

WO2005040897A3 SURFACE LIGHT SOURCE APPARATUS 审中-公开
标题翻译：表面光源装置
公开(公告)号：WO2005040897A3
公开(公告)日：2005-07-21
申请号：PCT/KR2004002691
申请日：2004-10-21
申请人： SAMSUNG ELECTRONICS CO LTD , SAMSUNG CORNING CO LTD , KIM HYOUNG-JOO , BYUN JIN-SEOB , KIM DONG-WOO , KIM NAM-HUN , LEE SANG-YU
发明人： KIM HYOUNG-JOO , BYUN JIN-SEOB , KIM DONG-WOO , KIM NAM-HUN , LEE SANG-YU
IPC分类号： G02F20060101 , G02F1/13357 , H01J61/30 , H01J65/04 , G02F1/3357
CPC分类号： H01J65/046 , G02F1/133604 , H01J61/305
摘要： A surface light source apparatus (100) includes a main body (105) having a space, and a plurality of space division members (130) being disposed in the space so that the space division members (130) are extended in a first direction and arranged in a second direction spaced apart from one another to divide the space into a plurality of light emitting spaces (112). The space division members (130) include a plurality of connecting holes (132). At least two of the connecting holes (132) have different heights from one another with respect to a bottom surface of the main body (105) to have the light emitting spaces connected to one another through the connecting holes (132). The surface light source apparatus also includes a visible light emitting unit to generate a visible light in the light emitting spaces. Therefore, the brightness-uniformity of the surface light source apparatus and an image display quality of a display device are improved.
摘要翻译：表面光源装置（100）具有空间的主体（105），并且在该空间内配置有多个间隔部件（130），使空间分割部件（130）沿第一方向延伸，布置在彼此间隔开的第二方向上，以将空间分成多个发光空间（112）。间隔部件（130）包括多个连接孔（132）。至少两个连接孔（132）相对于主体（105）的底面彼此具有不同的高度，以使发光空间通过连接孔（132）相互连接。表面光源装置还包括在发光空间中产生可见光的可见光发射单元。因此，提高了表面光源装置的亮度均匀性和显示装置的图像显示质量。

8. 发明申请

WO2005025281A1 ADAPTIVELY PLASMA SOURCE FOR GENERATING UNIFORM PLASMA 审中-公开
标题翻译：用于产生均匀等离子体的适应性等离子体源
公开(公告)号：WO2005025281A1
公开(公告)日：2005-03-17
申请号：PCT/KR2004/002282
申请日：2004-09-08
申请人： ADAPTIVE PLASMA TECHNOLOGY CORPORATION , KIM, Nam-Hun
发明人： KIM, Nam-Hun
IPC分类号： H05H1/46
CPC分类号： H01J37/321 , H05H1/46
摘要： There is provided an adaptive plasma source, which is arranged at an upper portion of a reaction chamber having a reaction space to form plasma and is supplied with RF (radio frequency) power from an external RF power source to form an electric field inside the reaction space. The adaptive plasma source includes a conductive bushing and at least two unit coils. The bushing is coupled to the RF power source and arranged at an upper central portion of the reaction chamber. The at least two unit coils are branched from the bushing and surround the bushing in a spiral shape and have the number of turns equal to a x (b/m), where a and b are positive integers and m is the number of the unit coils.
摘要翻译：提供了一种自适应等离子体源，其被布置在具有反应空间的反应室的上部以形成等离子体，并且从外部RF电源提供RF（射频）功率以在反应中形成电场空间。自适应等离子体源包括导电衬套和至少两个单元线圈。衬套连接到RF电源并且布置在反应室的上部中心部分。至少两个单元线圈从衬套分支并围绕套管以螺旋形状并且具有等于ax（b / m）的匝数，其中a和b是正整数，m是单位线圈的数量。

9. 发明申请

WO2003048055A1 APPARATUS FOR MOLDING A GLASS PRODUCT FOR USE IN A CATHODE RAY TUBE 审中-公开
标题翻译：用于模制用于阴极射线管的玻璃产品的装置
公开(公告)号：WO2003048055A1
公开(公告)日：2003-06-12
申请号：PCT/KR2002/001747
申请日：2002-09-18
申请人： SAMSUNG CORNING CO., LTD. , CHOI, Jang Soo , KIM, Jun Bum , BYUN, Hyun Hee , BAE, Jae Jung , LEE, Kun Hee , KIM, Nam Hun
发明人： CHOI, Jang Soo , KIM, Jun Bum , BYUN, Hyun Hee , BAE, Jae Jung , LEE, Kun Hee , KIM, Nam Hun
IPC分类号： C03B11/02
CPC分类号： C03B11/127 , C03B11/02 , C03B11/06 , C03B11/10 , H01J9/244 , Y02P40/57
摘要： An apparatus for molding a glass product for use in a cathode ray tube includes a plurality of molding assemblies, each of the molding assemblies having a mold set for molding the glass product. Each of the mold sets possesses a lower mold and a corresponding upper mold. Further, the mold set is pressed at a pressing station and then shifted to at least one cooling station in a closed state thereof.
摘要翻译：用于模制用于阴极射线管的玻璃制品的装置包括多个模制组件，每个模制组件具有用于模制玻璃制品的模具组。每个模具组具有下模具和相应的上模具。此外，模具组件在加压站处被按压，然后在关闭状态下移动到至少一个冷却站。

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