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    • 2. 发明公开
    • Method and apparatus for heat treatment of semiconductor films
    • Verfahren und Vorrichtung zurWärmebehandlungvon Halbleiterfilmen
    • EP1271620A1
    • 2003-01-02
    • EP01420142.0
    • 2001-06-21
    • Kim, Hyoung June
    • Kim, Hyoung June
    • H01L21/00C30B25/10
    • H01L21/67115
    • The present invention relates to methods and apparatuses for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates at a minimum thermal budget are required, and more particularly, to a polycrystalline silicon thin-film transistors (poly-Si TFTs) and PN diodes on glass substrates for various applications of liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and solar cells. According to the methods and apparatus of the present invention, the semiconductor films can be heat-treated without damaging the thermally susceptible substrates: e.g., crystallization of amorphous silicon films at the minimum thermal budget acceptable for the use of glass, enhancing kinetics of dopant activation at the minimum thermal budget acceptable for the use of glass.
    • 本发明涉及用于在热敏非导电基板上以最小热量预算对半导体膜进行热处理的方法和装置,更具体地涉及多晶硅薄膜晶体管(多晶硅TFT)和PN二极管 在用于液晶显示器(LCD),有机发光二极管(OLED)和太阳能电池的各种应用的玻璃基板上。 根据本发明的方法和装置,可以对半导体膜进行热处理,而不会损害耐热敏基板:例如,在玻璃的使用可接受的最小热预算下非晶硅膜的结晶化,增强掺杂剂激活的动力学 在玻璃使用的最低热预算可接受。