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    • 10. 发明申请
    • (HALO)METAL SILICON OXYNITRIDE PHOSPHOR AND A PRODUCTION METHOD THEREFOR
    • (HALO)金属氧化硅氧化物及其生产方法
    • WO2012050304A3
    • 2012-06-14
    • PCT/KR2011006603
    • 2011-09-07
    • KOREA RES INST CHEM TECHKIM CHANG HAECHOI KANG SIKYOU HWA SUNG
    • KIM CHANG HAECHOI KANG SIKYOU HWA SUNG
    • C09K11/86H01L33/00
    • C09K11/7734H01L33/50
    • The present invention relates to a (halo)metal silicon oxynitride phosphor and to a production method therefor. More specifically, the present invention relates to: a (halo)metal silicon oxynitride phosphor wherein various forms of alkali metals, alkaline earth metals, transition metals or the like have been substituted into or added to a SrSi2O2N2:Eu2+ phosphor; and to a method for producing the same by means of a solid-phase method at atmospheric pressure. The (halo)metal silicon oxynitride phosphor of the present invention has a luminescence peak in the yellow zone due to an ultraviolet or blue excitation source and has outstanding luminous intensity and thermal stability and can therefore be used to advantage as a light-emitting element such as a light-emitting diode, laser diode, surface-emitting laser diode, inorganic electroluminescent device, or organic electroluminescent device.
    • 本发明涉及(卤)金属氮氧化硅荧光粉及其制造方法。 更具体地说,本发明涉及:其中各种形式的碱金属,碱土金属,过渡金属等已经被取代或添加到SrSi 2 O 2 N 2:Eu 2+荧光体中的(卤素)金属氮氧化硅荧光体; 以及在大气压下通过固相法制造该方法。 本发明的(卤)金属氧氮化硅荧光体由于紫外线或蓝色激发源而在黄色区域具有发光峰值,并且具有优异的发光强度和热稳定性,因此可以有利地用作发光元件 作为发光二极管,激光二极管,表面发射激光二极管,无机电致发光器件或有机电致发光器件。