专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1997018582A1 WAFER-CLEANING SOLUTION AND PROCESS FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：清洁溶液及其生产方法
公开(公告)号：WO1997018582A1
公开(公告)日：1997-05-22
申请号：PCT/JP1996003313
申请日：1996-11-11
申请人： DAIKIN INDUSTRIES, LTD. , KEZUKA, Takehiko , SUYAMA, Makoto , KAMIYA, Fumihiro , ITANO, Mitsushi
发明人： DAIKIN INDUSTRIES, LTD.
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , C11D1/24 , C11D1/29 , C11D3/042 , C11D3/3947 , C11D7/08 , C11D11/0047
摘要： A wafer-cleaning solution comprising 20 to 60 wt.% of hydrogen fluoride containing 0.1 to 1000 ppm of at least one compound selected from among CnH2n+1ph(SO3M)Oph(SO3M), CnH2n+1phO(CH2CH2O)mSO3M and CnH2n+1O(CH2CH2O)mSO3M (wherein ph is phenylene; n is 5 to 20; m is 0 to 20; and M is hydrogen or a salt group) dissolved therein, and the balance of water (with the total amount being 100 wt.%); and a process for producing a wafer-cleaning solution by adding water, H2O2, HNO3, CH3COOH, NH4F and so on to the above solution. Another wafer-cleaning solution comprising HF, H2O2, HNO3, CH3COOH, NH4F, HCl, H3PO4, at least one ammonium hydroxide of the general formula: [(R1)(R2)(R3)(R4)N] OH (R1, R2, R3 and R4 being each independently optionally hydroxylated C1-C6 alkyl), 0,01 to 1000 ppm of at least one surfactant selected from among CnH2n+1ph(SO3M)Oph(SO3M), CnH2n+1phO(CH2CH2O)mSO3M and CnH2n+1O(CH2CH2O)mSO3M (wherein ph, n, m and M are each as described above) which is dissolved in the above compounds, and the balance of water (with the total amount being 100 wt.%).
摘要翻译：一种晶片清洁溶液，其包含20至60重量％的含有0.1至1000ppm的至少一种选自CnH2n + 1ph（SO3M）Oph（SO3M），CnH2n + 1phO（CH2CH2O）mSO3M和CnH2n + 1O的化合物的氟化氢（CH2CH2O）mSO3M（其中ph为亚苯基; n为5〜20; m为0〜20; M为氢或盐基），余量为水（总量为100重量％） ; 以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等来制造晶片清洁溶液的方法。另一种包含HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F，HCl，H 3 PO 4，至少一种通式如下的氢氧化铵的晶片清洗溶液：[（R1）（R2）（R3）（R4）N] - （R 1，R 2，R 3和R 4各自独立地任选羟基化的C 1 -C 6烷基），0.01-1000ppm的至少一种选自CnH2n + 1ph（SO3M）Oph（SO3M），CnH2n + 1phO CH2CH2O）mSO3M和CnH2n + 10（CH2CH2O）mSO3M（其中ph，n，m和M各自如上所述），其余溶于上述化合物，余量为水（总量为100重量％）。

2. 发明申请

WO1995020642A1 CLEANING AGENT AND METHOD 审中-公开
标题翻译：清洁剂和方法
公开(公告)号：WO1995020642A1
公开(公告)日：1995-08-03
申请号：PCT/JP1995000086
申请日：1995-01-25
申请人： DAIKIN INDUSTRIES, LTD. , KEZUKA, Takehiko , ITANO, Mitsushi , KUBO, Motonobu
发明人： DAIKIN INDUSTRIES, LTD.
IPC分类号： C11D07/08
CPC分类号： H01L21/02052 , C11D1/004 , C11D3/042 , C11D7/08 , C11D11/0047
摘要： A cleaning agent comprising 0.1-4 wt.% of hydrofluoric acid, 50-1,500 ppm of a surfactant represented by the following general formula (1): RfCOONH4 or 50-100,000 ppm of a surfactant represented by the following general formula (2): Rf'O(CH2CH2O)nR or (3): Rf'(CH2CH2O)nR, and the balance consisting of water; and a method of cleaning the surface of a silicon wafer, etc., by using the same. In formula (1) Rf represents a C5-C9 fluorohydrocarbon group, in formula (2) or (3) Rf' represents a C5-C15 fluorohydrocarbon group; R represents hydrogen or C1-C4 alkyl; and n represents a number of 5 to 20.
摘要翻译：包含0.1-4重量％的氢氟酸，50-1,500ppm由以下通式（1）表示的表面活性剂的清洁剂：RfCOONH4或50-100,000ppm由以下通式（2）表示的表面活性剂： Rf'O（CH2CH2O）nR或（3）：Rf'（CH2CH2O）nR，余量由水组成; 以及通过使用该方法清洁硅晶片的表面等的方法。在式（1）中，R f表示C 5 -C 9氟代烃基，在式（2）或（3）中，R f'表示C 5 -C 15氟代烃基; R代表氢或C 1 -C 4烷基; n表示5〜20的数。

3. 发明申请

WO1996021942A1 METHOD OF CLEANING SUBSTRATES 审中-公开
标题翻译：清洗基板的方法
公开(公告)号：WO1996021942A1
公开(公告)日：1996-07-18
申请号：PCT/JP1996000028
申请日：1996-01-11
申请人： DAIKIN INDUSTRIES LTD. , ITANO, Mitsushi , KEZUKA, Takehiko , SUYAMA, Makoto
发明人： DAIKIN INDUSTRIES LTD.
IPC分类号： H01L21/304
CPC分类号： H01L21/02052
摘要： A method of removing particles adherent to substrates, in particular, silicon wafer substrates by cleaning with an ammonia-hydrogen peroxide solution mixture, rinsing with ultrapure water, cleaning with hydrofluoric acid, and rinsing with ultrapure water, wherein an anionic surfactant is added to the hydrofluoric acid and, if necessary, to the ammonia-hydrogen peroxide solution mixture. As the particles detached in the step of cleaning with an ammonia-hydrogen peroxide solution mixture are not absorbed again in the step of cleaning with hydrofluoric acid, the particle removal rate is remarkably improved.
摘要翻译：通过用氨 - 过氧化氢溶液混合物清洗，用超纯水冲洗，用氢氟酸清洗并用超纯水冲洗去除附着于基材，特别是硅晶片基材的颗粒的方法，其中将阴离子表面活性剂加入到氢氟酸，如有必要，可加入氨 - 过氧化氢溶液中。由于在用氨 - 过氧化氢溶液清洗的步骤中分离的颗粒在用氢氟酸清洗的步骤中不再被吸收，所以颗粒去除率显着提高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式