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1. 发明专利

AU2002239190A1 Ion sorces 未知
公开(公告)号：AU2002239190A1
公开(公告)日：2002-11-25
申请号：AU2002239190
申请日：2002-02-11
申请人： ZELENKOV VSEVOLOD V , KEEM JOHN E , ALEKSEEV VALERY V , KRIVORUCHKO MARK M
发明人： KEEM JOHN E , KRIVORUCHKO MARK M , ALEKSEEV VALERY V , ZELENKOV VSEVOLOD V
IPC分类号： H05H1/54 , F03H1/00 , H01J27/02 , H01J27/18 , H01J37/08
摘要： A closed loop exit hole is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit hole serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit hole and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0.05.The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density across the ion beam section.

2. 发明申请

WO02093987A3 ION SORCES 审中-公开
标题翻译：离子SORCES
公开(公告)号：WO02093987A3
公开(公告)日：2003-03-13
申请号：PCT/RU0200041
申请日：2002-02-11
申请人： ALEKSEEV VALERY V , ZELENKOV VSEVOLOD V , KRIVORUCHKO MARK M , KEEM JOHN E
发明人： ALEKSEEV VALERY V , ZELENKOV VSEVOLOD V , KRIVORUCHKO MARK M , KEEM JOHN E
IPC分类号： H05H1/54 , F03H1/00 , H01J27/02 , H01J27/18 , H01J37/08
CPC分类号： H01J27/143
摘要： A closed loop exit aperture is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit aperture serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit aperture and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0,05. The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density.
摘要翻译：封闭的电子漂移离子源的外壳（1）的导磁端壁（2）中形成闭环出口孔。由出口孔分隔的该端壁的部分用作磁性系统的极片（7和8）并限定第一极间隙。磁性系统包括极片（9和10），其限定以闭环出口孔的形式制成并沿着离子发射方向布置的第二极间隙。磁动势源（5和6）位于两组磁性端子之间的空间中。第一（7和8）和第二（9和10）磁隙的极点之间的距离沿离子发射方向的每个极间隙的宽度与极片之间的距离的比率不小于0.05。本发明允许产生的离子束的强度和离子的能量增加，这是通过离子电流密度的均匀分布来提供的。

3. 发明申请

WO2002093987A2 ION SORCES 审中-公开
标题翻译：离子SORCES
公开(公告)号：WO2002093987A2
公开(公告)日：2002-11-21
申请号：PCT/RU2002/000041
申请日：2002-02-11
申请人： ALEKSEEV, Valery, V. , ZELENKOV, Vsevolod, V. , KRIVORUCHKO, Mark, M. , KEEM, John, E.
发明人： ALEKSEEV, Valery, V. , ZELENKOV, Vsevolod, V. , KRIVORUCHKO, Mark, M. , KEEM, John, E.
IPC分类号： H05H1/00
CPC分类号： H01J27/143
摘要： A closed loop exit aperture is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit aperture serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit aperture and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0,05. The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density.
摘要翻译：封闭的电子漂移离子源的外壳（1）的导磁端壁（2）中形成闭环出口孔。由出口孔分隔的该端壁的部分用作磁性系统的极片（7和8）并限定第一极间隙。磁性系统包括极片（9和10），其限定以闭环出口孔的形式制成并沿着离子发射方向布置的第二极间隙。磁动势源（5和6）位于两组磁性端子之间的空间中。第一（7和8）和第二（9和10）磁隙的极点之间的距离沿离子发射方向的每个极间隙的宽度与极片之间的距离的比率不小于0.05。本发明允许产生的离子束的强度和离子的能量增加，这是通过离子电流密度的均匀分布来提供的。

4. 发明申请

WO2005020265A3 SPUTTERED CONTAMINATION SHIELDING FOR AN ION SOURCE 审中-公开
标题翻译：用于离子源的溅射污染屏蔽
公开(公告)号：WO2005020265A3
公开(公告)日：2006-04-20
申请号：PCT/US2004027189
申请日：2004-08-20
申请人： VEECO INSTR INC , BURTNER DAVID MATTHEW , SIEGFRIED DANIEL E , BLACKER RICHARD , ALEXEYEV VALERY , KEEM JOHN , ZELENKOV VSEVOLOD , KRIVORUCHKO MARK
发明人： BURTNER DAVID MATTHEW , SIEGFRIED DANIEL E , BLACKER RICHARD , ALEXEYEV VALERY , KEEM JOHN , ZELENKOV VSEVOLOD , KRIVORUCHKO MARK
IPC分类号： H01J20060101 , G21K5/10
CPC分类号： H01J1/00
摘要： Shielding (108) associated with an ion source (102), such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate (110). While passing the ion beam through to the target substrate (110), shielding (108) can reduce the total amount of sputtered contaminants impinging the substrate (110) before, during, and/or after passage of the substrate (110) through the envelope of the etching beam. Particularly, a shield configuration (108) that blocks the contaminants from impinging the substrate (110) after the substrate (100) passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate (110) with reduced substrate (110) contamination.
摘要翻译：与诸如阳极层源的离子源（102）相关联的屏蔽（108）减少了撞击并保留在目标衬底（110）的表面上的溅射污染物的量和/或浓度。当通过离子束通过目标衬底（110）时，屏蔽（108）可以减少在衬底（110）穿过信封之前，期间和/或之后撞击衬底（110）的溅射污染物的总量的蚀刻光束。特别地，在衬底（100）通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底（110）的屏蔽配置（108）产生更高质量的衬底（110）具有减少的基底（110）污染。

5. 发明申请

WO2005010911A3 LONGITUDINAL CATHODE EXPANSION IN AN ION SOURCE 审中-公开
公开(公告)号：WO2005010911A3
公开(公告)日：2005-02-03
申请号：PCT/US2004/023890
申请日：2004-07-22
申请人： VEECO INSTRUMENTS, INC. , SIEGFRIED, Daniel, E. , BURTNER, David, Matthew , TOWNSEND, Scott, A. , KEEM, John , KRIVORUSCHKO, Mark , ALEXEYEV, Valery , ZELENKOV, Vsevolod
发明人： SIEGFRIED, Daniel, E. , BURTNER, David, Matthew , TOWNSEND, Scott, A. , KEEM, John , KRIVORUSCHKO, Mark , ALEXEYEV, Valery , ZELENKOV, Vsevolod
IPC分类号： H01J7/24
摘要： An ion source design and manufacturing techniques allows longitudinal cathode expansion along the length of the anode layer source (ALS) (300). Cathode covers (304) are used to secure the cathode plates (302) to the source body assembly (308) of an ion source. The cathode covers (304) allow the cathode plate (302) to expand along the longitudinal axis of the ion source, thereby relieving the stress introduced by differential thermal expansion. In addition, the cathode cover (304) configuration allows for less expensive cathode plates (302), including modular cathode plates. Such plates can be adjusted relative to the cathode-cathode gap to prolong the life of a given cathode plate and maintain source performance requirements. A cathode plate (302) in a linear section of an ion source has symmetrical edges and can, therefore, be flipped over to exchange the first (worn) cathode edge with the second (unworn) cathode edge.

6. 发明申请

WO2005010911A2 LONGITUDINAL CATHODE EXPANSION IN AN ION SOURCE 审中-公开
标题翻译：一个离子源的长期阴茎扩张
公开(公告)号：WO2005010911A2
公开(公告)日：2005-02-03
申请号：PCT/US2004023890
申请日：2004-07-22
申请人： VEECO INSTR INC , SIEGFRIED DANIEL E , BURTNER DAVID MATTHEW , TOWNSEND SCOTT A , KEEM JOHN , KRIVORUSCHKO MARK , ALEXEYEV VALERY , ZELENKOV VSEVOLOD
发明人： SIEGFRIED DANIEL E , BURTNER DAVID MATTHEW , TOWNSEND SCOTT A , KEEM JOHN , KRIVORUSCHKO MARK , ALEXEYEV VALERY , ZELENKOV VSEVOLOD
IPC分类号： H01J20060101 , H01J7/24 , H01J27/00 , H01J
CPC分类号： H01J27/143
摘要： An ion source design and manufacturing techniques allows longitudinal cathode expansion along the length of the anode layer source (ALS). Cathode covers are used to secure the cathode plates to the source body assembly of an ion source. The cathode covers allow the cathode plate to expand along the longitudinal axis of the ion source, thereby relieving the stress introduced by differential thermal expansion. In addition, the cathode cover configuration allows for less expensive cathode plates, including modular cathode plates. Such plates can be adjusted relative to the cathode-cathode gap to prolong the life of a given cathode plate and maintain source performance requirements. A cathode plate in a linear section of an ion source has symmetrical edges and can, therefore, be flipped over to exchange the first (worn) cathode edge with the second (unworn) cathode edge.
摘要翻译：离子源设计和制造技术允许纵向阴极沿阳极层源（ALS）的长度膨胀。阴极盖用于将阴极板固定到离子源的源体组件。阴极盖允许阴极板沿着离子源的纵向轴线膨胀，从而减轻由差动热膨胀引入的应力。此外，阴极盖构造允许较便宜的阴极板，包括模块化阴极板。这样的板可以相对于阴极 - 阴极间隙进行调节，以延长给定阴极板的使用寿命并保持源性能要求。离子源的线性部分中的阴极板具有对称的边缘，因此可以翻转以与第二（未损坏的）阴极边缘交换第一（磨损）的阴极边缘。

7. 发明申请

WO2005020265A2 SPUTTERED CONTAMINATION SHIELDING FOR AN ION SOURCE 审中-公开
标题翻译：用于离子源的溅射污染屏蔽
公开(公告)号：WO2005020265A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/027189
申请日：2004-08-20
申请人： VEECO INSTRUMENTS, INC. , BURTNER, David, Matthew , SIEGFRIED, Daniel, E. , BLACKER, Richard , ALEXEYEV, Valery , KEEM, John , ZELENKOV, Vsevolod , KRIVORUCHKO, Mark
发明人： BURTNER, David, Matthew , SIEGFRIED, Daniel, E. , BLACKER, Richard , ALEXEYEV, Valery , KEEM, John , ZELENKOV, Vsevolod , KRIVORUCHKO, Mark
IPC分类号： H01J
CPC分类号： H01J1/00
摘要： Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.
摘要翻译：与离子源（例如阳极层源）相关联的屏蔽减少了撞击并残留在目标衬底表面上的溅射污染物的量和/或浓度。当将离子束通过目标衬底时，屏蔽可以减少在衬底通过蚀刻光束的外壳之前，之中和/或之后撞击衬底的溅射污染物的总量。特别地，在衬底通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底的屏蔽结构产生具有降低的衬底污染的较高质量的衬底。

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