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1. 发明授权

US09245757B2 Laser annealing treatment apparatus and laser annealing treatment method 有权
标题翻译：激光退火处理装置和激光退火处理方法
公开(公告)号：US09245757B2
公开(公告)日：2016-01-26
申请号：US13808875
申请日：2010-09-17
申请人： Junichi Shida , Suk-Hwan Chung , Masashi Machida
发明人： Junichi Shida , Suk-Hwan Chung , Masashi Machida
IPC分类号： B23K26/06 , B23K26/064 , B23K26/067 , H01L21/268 , H01L21/02 , B23K26/08 , B23K26/12
CPC分类号： H01L21/268 , B23K26/0622 , B23K26/064 , B23K26/0853 , B23K26/12 , B23K26/127 , H01L21/02532 , H01L21/02686
摘要： Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.
摘要翻译：提供了一种激光退火处理，其包括输出脉冲激光的激光源，形成脉冲激光的光学系统，并将成形的脉冲激光引导到经受治疗的半导体膜，以及承载半导体膜的载物台由脉冲激光照射，其中照射半导体膜的脉冲激光的脉冲能量密度的最大高度的最大高度的最大高度的10％等于或小于35纳秒，上升时间为下降时间从最大高度到最大高度的80纳秒至最大高度的10％，从而增加，而适于结晶等的能量密度没有特别增加，其余量，并且进行高质量的退火处理而没有降低吞吐量。

2. 发明授权

US07680163B2 Laser irradiating method including maintaining temperature of a lens 有权
标题翻译：激光照射方法，包括保持透镜的温度
公开(公告)号：US07680163B2
公开(公告)日：2010-03-16
申请号：US12232230
申请日：2008-09-12
申请人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
发明人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
IPC分类号： H01S3/04 , H01S3/08 , B23K26/06 , G02B7/02
CPC分类号： B23K26/04 , B23K26/707
摘要： A first mirror (5) that can be located at a reflection position (I) at which an optical path is blocked and a laser beam (a) is reflected, and a second mirror (6) that reflects the laser beam (a) which is reflected by the first mirror (5) are disposed between the condenser lens (2) and the object to be irradiated (4). The first mirror (5) is located at the reflection position (I) so that the laser beam (a) that is transmitted through the condenser lens (2) is sequentially reflected by the first and second mirrors (5 and 6), and an intensity of the laser beam (a) that is again reflected by the first mirror (5) is made to coincide with an intensity of the laser beam (a) that is reflected from the object to be irradiated (4), and the condenser lens (2) is heated in the same manner that the processing laser beam (a) is transmitted through the condenser lens (2) and irradiated on the object to be irradiated (4).
摘要翻译：可以位于反射位置（I）处的第一反射镜（5），光路被阻挡的位置和激光束（a）被反射;反射激光束（a）的第二反射镜（6）由第一反射镜（5）反射设置在聚光透镜（2）和被照射物体（4）之间。第一反射镜（5）位于反射位置（I），使得透过聚光透镜（2）的激光束（a）被第一和第二反射镜（5和6）顺序地反射，并且使由第一反射镜（5）再次反射的激光束（a）的强度与从被照射物体（4）反射的激光束（a）的强度一致，聚光透镜（2）以与处理用激光束（a）透过聚光透镜相同的方式进行加热，照射在被照射物体4上。

3. 发明申请

US20080030823A1 Laser Irradiating Method And Device For Same 有权
标题翻译：激光照射方法和装置相同
公开(公告)号：US20080030823A1
公开(公告)日：2008-02-07
申请号：US11662971
申请日：2006-06-02
申请人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
发明人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
IPC分类号： G02B26/08
CPC分类号： B23K26/04 , B23K26/707
摘要： Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4. The first mirror 5 is located at the reflection position I so that the laser beam a that is transmitted through the condenser lens 2 is sequentially reflected by the first and second mirrors 5 and 6, and an intensity of the laser beam a that is again reflected by the first mirror 5 is made to coincide with an intensity of the laser beam a that is reflected from the object to be irradiated 4, and the condenser lens 2 is heated in the same manner that the processing laser beam a is transmitted through the condenser lens 2 and irradiated on the object to be irradiated 4.
摘要翻译：由于聚光透镜的焦距由于温度变化而变化，因此在照射停止后重新开始激光束的照射时，将冷却后的透镜的温度恢复到规定温度需要较长时间，操作效率降低。可以位于反射位置I处的第一反射镜5，其中阻挡光路并且激光束a被反射，并且反射由第一反射镜5反射的激光束a的第二反射镜6设置在聚光透镜2和被照射物体4.第一反射镜5位于反射位置I，使得透过聚光透镜2的激光束a被第一和第二反射镜5和6依次反射，使由第一反射镜5再次反射的激光束a的强度与从被照射物体4反射的激光束a的强度一致，并且聚光透镜2被加热处理激光束a透过聚光透镜2并照射在被照射物体4上的方式。

4. 发明申请

US20070159614A1 Laser projection system 审中-公开
标题翻译：激光投影系统
公开(公告)号：US20070159614A1
公开(公告)日：2007-07-12
申请号：US11715095
申请日：2007-03-07
申请人： Toshio Inami , Kazunori Ohta , Yasuhide Kurata , Junichi Shida
发明人： Toshio Inami , Kazunori Ohta , Yasuhide Kurata , Junichi Shida
IPC分类号： G03B27/52
CPC分类号： B23K26/066
摘要： A mask distance a is adjusted with magnification control unit and mask-shift servo-control unit, and a base plate distance b is adjusted with focus control unit, AFC control unit and table-shift servo-control unit, so that a/b is kept constant, and 1/f=1/a+1/b is satisfied. Even when a focal distance of projection lens fluctuates from temperature change of projection lens due to laser beams, projection magnification is able to be kept constant and focusing is precisely carried out upon imaging mask on the base. The invention is usable for ELA (excimer laser anneal) apparatus of SLS (Sequential Lateral Solidification) type.
摘要翻译：使用放大控制单元和掩模移位伺服控制单元调整掩模距离a，并且用聚焦控制单元，AFC控制单元和台式移动伺服控制单元调整基板距离b，使得a / b为保持恒定，并且满足1 / f = 1 / a + 1 / b。即使当投影透镜的焦距随着激光束的投影透镜的温度变化而波动时，投影倍率也能够保持恒定，并且在基底上的成像掩模上精确地进行聚焦。本发明可用于SLS（顺次侧向凝固）型的ELA（准分子激光退火）装置。

5. 发明申请

US20130210242A1 LASER ANNEALING TREATMENT APPARATUS AND LASER ANNEALING TREATMENT METHOD 有权
标题翻译：激光退火治疗仪和激光治疗方法
公开(公告)号：US20130210242A1
公开(公告)日：2013-08-15
申请号：US13808875
申请日：2010-09-17
申请人： Junichi Shida , Suk-Hwan Chung , Masashi Machida
发明人： Junichi Shida , Suk-Hwan Chung , Masashi Machida
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , B23K26/0622 , B23K26/064 , B23K26/0853 , B23K26/12 , B23K26/127 , H01L21/02532 , H01L21/02686
摘要： Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.
摘要翻译：提供了一种激光退火处理，其包括输出脉冲激光的激光源，形成脉冲激光的光学系统，并将成形的脉冲激光引导到经受治疗的半导体膜，以及承载半导体膜的载物台由脉冲激光照射，其中照射半导体膜的脉冲激光的脉冲能量密度的最大高度的最大高度的最大高度的10％等于或小于35纳秒，上升时间为下降时间从最大高度到最大高度的80纳秒至最大高度的10％，从而增加，而适于结晶等的能量密度没有特别增加，其余量，并且进行高质量的退火处理而没有降低吞吐量。

6. 发明申请

US20100087007A1 METHOD FOR QUANTITATIVE DETERMINATION OF NICKEL AND/OR COPPER AND EQUIPMENT TO BE USED IN THE METHOD 审中-公开
标题翻译：用于定量测定在该方法中使用的镍和/或铜和设备的方法
公开(公告)号：US20100087007A1
公开(公告)日：2010-04-08
申请号：US12516462
申请日：2007-11-26
申请人： Hitoshi Mizuguchi , Junichi Shida , Masamitsu Iiyama , Mitsugu Abe
发明人： Hitoshi Mizuguchi , Junichi Shida , Masamitsu Iiyama , Mitsugu Abe
IPC分类号： G01N33/20 , B01J8/00
CPC分类号： G01N31/22
摘要： A method for quantitative determination of nickel and/or copper, by which an ultratrace amount of nickel and/or copper contained in a liquid sample can be easily and simply determined in situ; and apparatus to be used in the method. The method comprises a step of adding a complex-forming agent capable of forming a complex with nickel and copper to a liquid sample containing nickel and/or copper in unknown concentrations to form colored fine particles of a nickel complex and/or a copper complex and a step of determining the quantities of nickel and/or copper on the basis of the colored fine particles.
摘要翻译：用于定量测定镍和/或铜的方法，通过该方法可以容易且简单地原位测定液体样品中所含的超临界量的镍和/或铜; 以及在该方法中使用的装置。该方法包括将能够与镍和铜形成络合物的络合物形成剂添加到含有未知浓度的镍和/或铜的液体样品中以形成镍络合物和/或铜络合物的有色细颗粒的步骤，以及基于着色的细颗粒确定镍和/或铜的量的步骤。

7. 发明申请

US20090034578A1 Laser irradiating method and device for the same 有权
标题翻译：激光照射方法及装置相同
公开(公告)号：US20090034578A1
公开(公告)日：2009-02-05
申请号：US12232230
申请日：2008-09-12
申请人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
发明人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
IPC分类号： H01S3/08
CPC分类号： B23K26/04 , B23K26/707
摘要： Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4. The first mirror 5 is located at the reflection position I so that the laser beam a that is transmitted through the condenser lens 2 is sequentially reflected by the first and second mirrors 5 and 6, and an intensity of the laser beam a that is again reflected by the first mirror 5 is made to coincide with an intensity of the laser beam a that is reflected from the object to be irradiated 4, and the condenser lens 2 is heated in the same manner that the processing laser beam a is transmitted through the condenser lens 2 and irradiated on the object to be irradiated 4.
摘要翻译：由于聚光透镜的焦距由于温度变化而变化，因此在照射停止后重新开始激光束的照射时，将冷却后的透镜的温度恢复到规定温度需要较长时间，操作效率降低。可以位于反射位置I处的第一反射镜5，其中阻挡光路并且激光束a被反射，并且反射由第一反射镜5反射的激光束a的第二反射镜6设置在聚光透镜2和被照射物体4.第一反射镜5位于反射位置I，使得透过聚光透镜2的激光束a被第一和第二反射镜5和6依次反射，使由第一反射镜5再次反射的激光束a的强度与从被照射物体4反射的激光束a的强度一致，并且聚光透镜2被加热处理激光束a透过聚光透镜2并照射在被照射物体4上的方式。

8. 发明授权

US07471712B2 Laser irradiating method and device for same 有权
标题翻译：激光照射方法及装置相同
公开(公告)号：US07471712B2
公开(公告)日：2008-12-30
申请号：US11662971
申请日：2006-06-02
申请人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
发明人： Junichi Shida , Suk-hwan Chung , Shuichi Uryu
IPC分类号： H01S3/08 , H01S3/04 , G02B7/02
CPC分类号： B23K26/04 , B23K26/707
摘要： Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4. The first mirror 5 is located at the reflection position I so that the laser beam a that is transmitted through the condenser lens 2 is sequentially reflected by the first and second mirrors 5 and 6, and an intensity of the laser beam a that is again reflected by the first mirror 5 is made to coincide with an intensity of the laser beam a that is reflected from the object to be irradiated 4, and the condenser lens 2 is heated in the same manner that the processing laser beam a is transmitted through the condenser lens 2 and irradiated on the object to be irradiated 4.
摘要翻译：由于聚光透镜的焦距由于温度变化而变化，因此在照射停止后重新开始激光束的照射时，将冷却后的透镜的温度恢复到规定温度需要较长时间，操作效率降低。可以位于反射位置I处的第一反射镜5，其中阻挡光路并且激光束a被反射，并且反射由第一反射镜5反射的激光束a的第二反射镜6设置在聚光透镜2和被照射物体4.第一反射镜5位于反射位置I，使得透过聚光透镜2的激光束a被第一和第二反射镜5和6依次反射，使由第一反射镜5再次反射的激光束a的强度与从被照射物体4反射的激光束a的强度一致，并且聚光透镜2被加热处理激光束a透过聚光透镜2并照射在被照射物体4上的方式。

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