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1. 发明授权

US06387726B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06387726B1
公开(公告)日：2002-05-14
申请号：US09474760
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of polyimide on the first metal layer, by etching and patterning the insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the insulator layer of polyimide by heating at temperature for a period, by additionally curing the insulator layer of polyimide by heating at a second temperature, which is higher than the first temperature, and by depositing a second metal layer made of metal stack on the insulator layer of polyimide in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过以这样的方式沉积和图案化钝化层上的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过在第一金属层上沉积聚酰亚胺的绝缘体层金属层，通过以这样的方式蚀刻和图案化聚酰亚胺的绝缘体层，使得绝缘体层在至少一个p掺杂区域和n掺杂区域处打开窗口，通过加热固化聚酰亚胺的绝缘体层在一段时间的温度下，通过在高于第一温度的第二温度下加热来另外固化聚酰亚胺的绝缘体层，并且通过在绝缘体层的绝缘体层上沉积由金属叠层制成的第二金属层聚酰亚胺，使得第二金属层与p掺杂区域和n掺杂区域中的一个接触。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

2. 发明授权

US07188865B2 Counterweight for hydraulic shovel 有权
标题翻译：液压铲配重
公开(公告)号：US07188865B2
公开(公告)日：2007-03-13
申请号：US10789157
申请日：2004-02-27
申请人： Kiyoshi Sugiyama , Junichi Ohmura , Takenobu Andou
发明人： Kiyoshi Sugiyama , Junichi Ohmura , Takenobu Andou
IPC分类号： B60S9/22
CPC分类号： E02F9/0866 , E02F9/0833 , E02F9/18
摘要： A counterweight for a hydraulic shovel, which is applicable to a compact to large-sized hydraulic shovels, and is capable of realizing favorable engine maintainability and assurance of sufficient mass, is provided. For this purpose, supporting column portions (12b, 12c) are vertically provided at left and right of a counterweight (12). The left and right supporting column portions are constituted as an increase amount of mass of the counterweight. At least one of a floor frame (30), a canopy (40), outer casings (14, 16) and engine partition walls (33a, 33b) is supported at the left and right supporting column portions. Further, an engine (13) is placed at a position fronting to between the left and right supporting column portions.
摘要翻译：提供了一种用于液压铲的配重，其可应用于小型到大型液压铲，并且能够实现有利的发动机维修性和足够质量的保证。为此，支撑柱部分（12b，12c）垂直设置在配重（12）的左右。左右的支柱部分构成为配重的增加量。地板框架（30），顶盖（40），外壳（14,16）和发动机分隔壁（33a，33b）中的至少一个支撑在左右支撑柱部分。此外，发动机（13）被放置在左右支撑柱部分之间的位置。

3. 发明授权

US06423568B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06423568B1
公开(公告)日：2002-07-23
申请号：US09475187
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过在钝化层上沉积和图案化包含铝的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过沉积无机材料的绝缘体层在第一金属层上，通过以绝缘体层在p掺杂区域和n掺杂区域中的至少一个上打开窗户的方式蚀刻和图案化绝缘体层，并且通过沉积第二三层金属叠层，其包括除了铝之外的材料，以使得第二三层金属堆叠与p掺杂区域和n掺杂区域中的一个接触的方式在聚酰亚胺的绝缘体层上。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

4. 发明授权

US06337283B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06337283B1
公开(公告)日：2002-01-08
申请号：US09475256
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L21302
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, b depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of polyimide on the first metal layer, by etching and patterning the first insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of polyimide on the first insulator layer of polyimide, by etching and patterning the second insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the first insulator layer of polyimide by heating at a predetermined second temperature for a predetermined second time, and by depositing a second metal layer on the second insulator layer of polyimide in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，b沉积和图案化钝化层上的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过在第一金属层上沉积聚酰亚胺的第一绝缘体层通过蚀刻和图案化聚酰亚胺的第一绝缘体层，使得绝缘体层已在p掺杂区域和n掺杂区域中的至少一个处开放窗口，通过沉积第一绝缘体层聚酰亚胺在聚酰亚胺的第一绝缘体层上，通过蚀刻和图案化聚酰亚胺的第二绝缘体层，使得绝缘体层通过固化在至少一个p掺杂区域和n掺杂区域上打开窗口通过在预定的第二温度下加热预定的第二次，并且通过在第二绝缘体层上沉积第二金属层，使得第二金属层与第一绝缘体层接触， p掺杂区域和n掺杂区域。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

5. 发明授权

US06274402B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06274402B1
公开(公告)日：2001-08-14
申请号：US09475185
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of inorganic material on the first metal layer, by etching and patterning the first insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of organic material on the first insulator layer, by etching and patterning the second insulator layer in such a way that the insulator layer has opened windows at the one of the p-doped regions and the n-doped regions, by curing the second insulator layer by heating at a predetermined temperature for a predetermined time, and depositing a second metal layer on the second insulator layer of organic material in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过在钝化层上沉积和图案化第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过将无机材料的第一绝缘体层沉积在第一金属层，通过蚀刻和图案化第一绝缘体层，使得绝缘层已经在p掺杂区域和n掺杂区域中的至少一个处打开窗口，通过沉积有机的第二绝缘体层通过蚀刻和图案化第二绝缘体层，使得绝缘体层已经在p掺杂区域和n掺杂区域中的一个处打开窗口，通过固化第二绝缘体层b 在预定温度下加热预定时间，并且将第二金属层沉积在有机材料的第二绝缘体层上，使得第二金属层与p掺杂区域和n-掺杂区域中的一个接触，掺杂区域。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

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