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    • 1. 发明专利
    • Seating apparatus
    • 摄影装置
    • JP2013162991A
    • 2013-08-22
    • JP2012028976
    • 2012-02-13
    • Jun Murakami潤 村上
    • MURAKAMI JUN
    • A47C7/48A47C7/46
    • PROBLEM TO BE SOLVED: To provide a seating apparatus that is adaptable to both a physically-healthy person and a physically-disabled person, and can easily maintain the posture of the head of a human body for a long period of time such that the head exactly faces to the front side so that a user can look straight naturally.SOLUTION: A seating apparatus includes a sitting part 3 supported by a frame 2, and upper support poles 8 supported by the frame 2 on the back side of the sitting part 3. The upper support poles 8 are provided with right and left rotating shafts 10 with a horizontal direction as an axial direction, and a curved back rest 4 held between the right and left rotating shafts 10, and pivotally supported for free rotation and inclination. The curved back rest 4 is provided in the curved inner surface thereof with a contact surface 6 for supporting a human body. The central portion 14 of the curved inner surface of the contact surface 6 has the most proximate position point at a position within 2 cm in radius from a support point axis connecting the right and left rotating shafts 10. In addition, the height of the upper end of the central portion of the contact surface 6 is 4 to 8 cm higher than the height of the support point axis when the curved inner surface of the contact surface is at an upright position.
    • 要解决的问题:提供一种适用于身体健康的人和身体残障者的座位装置,并且可以容易地长时间地维持人体头部的姿势,使得头部 准确地面向前侧,使得用户可以自然地直视。解决方案:座椅装置包括由框架2支撑的坐立部分3和由坐在部分3的后侧上的框架2支撑的上支撑杆8 上支撑杆8设置有作为轴向方向的水平方向的左右旋转轴10和保持在左右旋转轴10之间的弯曲后支架4,并且可枢转地支撑以自由旋转和倾斜。 弯曲的靠背4在其弯曲的内表面中设置有用于支撑人体的接触表面6。 接触表面6的弯曲内表面的中心部分14在连接右旋转轴10和右旋转轴10的支撑点轴线的半径为2cm以内的位置处具有最接近的位置点。此外,上部 当接触表面的弯曲内表面处于直立位置时,接触表面6的中心部分的端部比支撑点轴线的高度高4至8厘米。
    • 5. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    • 非易失性半导体存储器件
    • US20150069488A1
    • 2015-03-12
    • US14187786
    • 2014-02-24
    • Hisakazu MATSUMORIJun MURAKAMI
    • Hisakazu MATSUMORIJun MURAKAMI
    • H01L21/28H01L29/788H01L29/66H01L29/40H01L27/115
    • H01L29/66825H01L27/11529
    • According to one embodiment, a memory cell transistor is obtained by forming a first gate insulating film, a first conductive film of a first conductivity type, a first inter-electrode insulating film, and a second conductive film of the first conductivity type, in this order, and a peripheral transistor which is obtained by forming a second gate insulating film, a third conductive film of the second conductivity type opposite to the first conductivity type, the inter-electrode insulating film, a fourth conductive film in which the first conductivity type dopant is doped, a barrier film, and a fifth conductive film in which the second conductivity type dopant is doped, in which in the peripheral transistor, an opening is formed on the barrier film, the fourth conductive film, and the inter-electrode insulating film, and the fifth conductive film is formed so as to come in contact with the third conductive film through the opening.
    • 根据一个实施例,通过形成第一导电类型的第一栅极绝缘膜,第一导电类型的第一导电膜,第一电极间绝缘膜和第二导电类型的第二导电膜来获得存储单元晶体管,在该 通过形成第二栅极绝缘膜,与第一导电类型相反的第二导电类型的第三导电膜,电极间绝缘膜和第四导电类型的第四导电膜获得的外围晶体管, 掺杂掺杂物,阻挡膜和第五导电膜,其中掺杂有第二导电类型掺杂剂,其中在外围晶体管中,在阻挡膜,第四导电膜和电极间绝缘体上形成开口 并且第五导电膜形成为通过开口与第三导电膜接触。