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    • 3. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US08362820B2
    • 2013-01-29
    • US13397742
    • 2012-02-16
    • Jun DeguchiDaisuke Miyashita
    • Jun DeguchiDaisuke Miyashita
    • H04B1/40H04B1/26
    • H03B19/14
    • A semiconductor integrated circuit includes a mixer circuit unit having a first single gate mixer configured to receive a first input signal having a first frequency and a second input signal having a second frequency as inputs, a second single gate mixer configured to receive the first input signal and a third input signal of a phase inverted from a phase of the second input signal as inputs, a third single gate mixer configured to receive a fourth input signal of a phase inverted from the phase of the first input signal and the second input signal as inputs, and a fourth single gate mixer configured to receive the third and the fourth input signals as inputs; and a ½-frequency divider unit configured to receive output signals from the first to the fourth single gate mixers as inputs and output a desired signal.
    • 半导体集成电路包括具有第一单栅极混频器的混频器电路单元,其被配置为接收具有第一频率的第一输入信号和具有第二频率的第二输入信号作为输入;第二单门混频器,被配置为接收第一输入信号 以及从所述第二输入信号的相位反转的相位的第三输入信号作为输入;第三单门混频器,被配置为接收从所述第一输入信号和所述第二输入信号的相位反相的相位的第四输入信号, 配置为接收第三和第四输入信号作为输入的第四单门混频器; 以及1/2分频器单元,被配置为从第一至第四单个栅极混合器接收输出信号作为输入并输出期望的信号。
    • 4. 发明授权
    • Wireless communication apparatus
    • 无线通信装置
    • US08233874B2
    • 2012-07-31
    • US13370101
    • 2012-02-09
    • Jun DeguchiShouhei KousaiDaisuke Miyashita
    • Jun DeguchiShouhei KousaiDaisuke Miyashita
    • H04B15/00
    • H04B1/0053
    • A wireless communication apparatus includes a local oscillator that generates a plurality of LO (Local Oschillation) signals corresponding to frequencies of a plurality of input RF (Radio Frequency) signals, an accumulator that accumulates the plurality of LO signals generated by the local oscillator to generate an accumulated signal, a mixer that mixes the plurality of RF signals and the accumulated signal generated by the accumulator and to generate a plurality of base band signals, and a first signal processing unit that executes a signal process with respect to the plurality of base band signals generated by the mixer.
    • 无线通信装置包括本地振荡器,其产生对应于多个输入RF(射频)信号的频率的多个LO(局部烧灼)信号,累加器,其累积由本地振荡器产生的多个LO信号,以产生 累积信号,混合多个RF信号的混频器和由累加器产生的累加信号并产生多个基带信号;以及第一信号处理单元,其执行关于多个基带的信号处理 由混合器产生的信号。
    • 9. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING A MIXER AND WIRELESS COMMUNICATION APPARATUS
    • 半导体集成电路,包括混频器和无线通信设备
    • US20090318096A1
    • 2009-12-24
    • US12489860
    • 2009-06-23
    • Jun DeguchiDaisuke MiyashitaHideyuki Kokatsu
    • Jun DeguchiDaisuke MiyashitaHideyuki Kokatsu
    • H04B1/38H01L25/00
    • H04B1/04H04B2001/0491
    • A semiconductor integrated circuit includes a first input terminal configured to input a baseband signal, a second input terminal configured to input a local oscillation signal, an output terminal configured to output a modulating signal, a first amplifier circuit configured to receive the baseband signal through the first input terminal and to output a first amplified signal of the baseband signal, a 2-multiplying circuit configured to receive the local oscillation signal through the second input terminal and to output a 2-multiplied signal of the local oscillation signal, an adder configured to add the 2-multiplied signal and the first amplified signal and to output an addition signal, a second amplifier circuit configured to receive the addition signal and to output a second amplified signal of the addition signal, and a mixer configured to multiply the second amplified signal and the local oscillation signal and to output the modulating signal to the output terminal.
    • 半导体集成电路包括被配置为输入基带信号的第一输入端子,被配置为输入本地振荡信号的第二输入端子,被配置为输出调制信号的输出端子,被配置为通过所述第一输入端子接收基带信号的第一放大器电路 第一输入端并输出基带信号的第一放大信号; 2倍增电路,被配置为通过第二输入端接收本地振荡信号,并输出本地振荡信号的2相乘信号;加法器,被配置为 添加2倍增信号和第1放大信号并输出​​加法信号;第2放大电路,被配置为接收相加信号并输出​​加法信号的第2放大信号;以及混频器,被配置为将第2放大信号 和本地振荡信号,并将调制信号输出到输出端。
    • 10. 发明授权
    • Semiconductor memory device executing a write operation with first and second voltage applications
    • 半导体存储器件利用第一和第二电压应用执行写操作
    • US09245621B2
    • 2016-01-26
    • US14118703
    • 2012-03-09
    • Jun DeguchiHaruki Toda
    • Jun DeguchiHaruki Toda
    • G11C11/00G11C13/00
    • G11C13/0069G11C13/0002G11C13/0007G11C2013/0073G11C2013/0085G11C2013/0088G11C2013/009G11C2213/71G11C2213/77
    • A semiconductor memory device comprises a memory cell array including plural memory cells provided at the intersections of plural first lines and plural second lines; and a write circuit. The write circuit, on execution of a write operation, executes a first step of applying a voltage across the first and second lines connected to a data-write-targeted, selected memory cell, and a different voltage across the first and second lines connected to a data-write-untargeted, unselected memory cell of the plural memory cells and, after execution of the first step, executes a second step of applying a voltage, required for data write, across the first and second lines connected to the selected memory cell, and bringing at least one of the first and second lines connected to the unselected memory cell into the floating state.
    • 半导体存储器件包括存储单元阵列,该存储单元阵列包括设置在多个第一线和多条第二线的交点处的多个存储单元; 和写电路。 写入电路在执行写入操作时执行第一步骤,跨连接到数据写入目标的选择的存储器单元的第一和第二线路施加电压,并跨越连接到第一和第二线路的不同电压 所述多个存储单元的数据写未指定的未选择的存储单元,并且在执行所述第一步骤之后,执行第二步骤,在连接到所选存储单元的第一和第二行上施加数据写入所需的电压 并且将连接到未选择的存储单元的第一和第二线中的至少一个引入浮动状态。