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1. 发明申请

US20120227799A1 HIGH EFFICIENCY MICROMORPH TANDEM CELLS 有权
标题翻译：高效MICROMORPH TANDEM细胞
公开(公告)号：US20120227799A1
公开(公告)日：2012-09-13
申请号：US13496256
申请日：2010-09-17
申请人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
发明人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
IPC分类号： H01L31/076 , H01L31/18
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.
摘要翻译：公开了一种制造微型串联电池的方法。微型串联电池包括μc-Si：H底电池和a-Si：H顶电池，LPCVD ZnO前接触层和与背反射器结合的ZnO背接触。该方法包括以下步骤：将AR-抗反射概念应用于微型串联电池; 在微型串联电池中实现中间反射器。微型串联电池可以实现10.6％的稳定效率。

2. 发明授权

US08723020B2 Textured transparent conductive layer and method of producing it 有权
标题翻译：纹理透明导电层及其制造方法
公开(公告)号：US08723020B2
公开(公告)日：2014-05-13
申请号：US12294936
申请日：2007-02-13
申请人： Julien Bailat , Christophe Ballif , Didier Domine
发明人： Julien Bailat , Christophe Ballif , Didier Domine
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/0236 , Y02E10/50
摘要： The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.
摘要翻译：根据本发明的织构化的透明导电层沉积在用于光电装置的基板上，并呈现由一系列凸起和中空形成的表面形态。其特征在于其中空具有半径大于25nm的圆形基部; 所述中空实际上是平滑的，也就是说，在它们表现出微观粗糙度的情况下，这些微粗糙度的平均高度小于5nm; 并且其侧面与基板的平面形成一个角度，其绝对值的中值在30°和75°之间。

3. 发明申请

US20110260164A1 MULTIPLE-JUNCTION PHOTOELECTRIC DEVICE AND ITS PRODUCTION PROCESS 有权
标题翻译：多功能光电器件及其生产工艺
公开(公告)号：US20110260164A1
公开(公告)日：2011-10-27
申请号：US13130205
申请日：2009-11-18
申请人： Didier Domine , Peter Cuony , Julien Bailat
发明人： Didier Domine , Peter Cuony , Julien Bailat
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0376
CPC分类号： H01L31/202 , H01L31/02366 , H01L31/0547 , H01L31/0687 , H01L31/1824 , Y02E10/52 , Y02E10/544 , Y02E10/545 , Y02P70/521
摘要： A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom is smaller than α90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
摘要翻译：多结光电装置包括其上具有第一导电层的衬底，p-i-n或p-n构型的至少两个基本光电器件，其上具有第二导电层，以及在两个相邻的基本光电器件之间的至少一个中间层。中间层在入射光侧具有相对的顶面和底面，顶表面和底面分别具有包括倾斜元件表面的表面形态，因此α90底部小于α90顶部至少3°，优选为6°，更优选为10° °，甚至更优选15°; 其中α90top是中间层的顶面的90％的基本表面具有等于或小于该角度的倾角的角度，并且α90底部是底面的90％的基本表面的角度中间层具有等于或小于该角度的倾斜度。

4. 发明申请

US20110030760A1 PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光伏器件及制造光伏器件的方法
公开(公告)号：US20110030760A1
公开(公告)日：2011-02-10
申请号：US12988004
申请日：2009-04-17
申请人： Johannes Meier , Ulrich Kroll , Julien Bailat
发明人： Johannes Meier , Ulrich Kroll , Julien Bailat
IPC分类号： H01L31/042 , H01L31/075 , H01L31/0368 , H01L31/18
CPC分类号： H01L31/076 , Y02E10/548
摘要： The photovoltaic device comprises a substrate, deposited on said substrate, a first contact layer; a second contact layer; between said first and second contact layers: a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer; a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer. The thickness of the first at least substantially intrinsic layer is between 160 nm and 400 nm, and the thickness of the second at least substantially intrinsic layer is between 1 μm and 2 μm.
摘要翻译：光伏器件包括沉积在所述衬底上的衬底，第一接触层; 第二接触层; 在第一和第二接触层之间：第一层堆叠，包括第一p掺杂层，第一至少基本上本征的非晶氢化硅层和第一n掺杂层; 第二层堆叠，包括第二p掺杂层，第二至少基本上本征的微晶氢化硅层和第二n掺杂层。第一至少基本上本征层的厚度在160nm和400nm之间，并且第二至少基本上本征层的厚度在1μm和2μm之间。

5. 发明授权

US08846434B2 High efficiency micromorph tandem cells 有权
标题翻译：高效微型串联电池
公开(公告)号：US08846434B2
公开(公告)日：2014-09-30
申请号：US13496256
申请日：2010-09-17
申请人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
发明人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
IPC分类号： H01L31/076 , H01L31/18 , H01L31/0224 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/052
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.
摘要翻译：公开了一种制造微型串联电池的方法。微型串联电池包括μc-Si：H底电池和a-Si：H顶电池，LPCVD ZnO前接触层和与背反射器结合的ZnO背接触。该方法包括以下步骤：将AR-抗反射概念应用于微型串联电池; 在微型串联电池中实现中间反射器。微型串联电池可以实现10.6％的稳定效率。

6. 发明申请

US20130340817A1 THIN FILM SILICON SOLAR CELL IN TANDEM JUNCTION CONFIGURATION ON TEXTURED GLASS 审中-公开
标题翻译：薄膜玻璃上的薄膜结构中的薄膜硅太阳能电池
公开(公告)号：US20130340817A1
公开(公告)日：2013-12-26
申请号：US13819045
申请日：2011-09-01
申请人： Julien Bailat , Karl William Koch, III , Glenn Eric Kohnke , Sasha Marjanovic , Johannes Meier
发明人： Julien Bailat , Karl William Koch, III , Glenn Eric Kohnke , Sasha Marjanovic , Johannes Meier
IPC分类号： H01L31/0236 , H01L31/076
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/03921 , H01L31/076 , Y02E10/50
摘要： Solar cells or solar modules of the so-called tandem type, i.e. stacked arrangements of photovoltaic absorber devices on a substrate with a textured surface are described. The thin film solar cell has a substrate comprising a textured surface, and a front electrode layer comprising a transparent conductive oxide adjacent to the textured surface, wherein the electrode layer has a thickness less than the roughness of the textured surface.
摘要翻译：描述了所谓的串联式太阳能电池或太阳能模块，即具有纹理表面的基板上的光电吸收器件的堆叠布置。所述薄膜太阳能电池具有包含织构化表面的基板和包括与所述纹理表面相邻的透明导电氧化物的前电极层，其中所述电极层的厚度小于所述纹理表面的粗糙度。

7. 发明申请

US20100126575A1 TEXTURED TRANSPARENT CONDUCTIVE LAYER AND METHOD OF PRODUCING IT 有权
标题翻译：纹理透明导电层及其生产方法
公开(公告)号：US20100126575A1
公开(公告)日：2010-05-27
申请号：US12294936
申请日：2007-02-13
申请人： Julien Bailat , Christophe Ballif , Didier Domine
发明人： Julien Bailat , Christophe Ballif , Didier Domine
IPC分类号： H01L31/0236
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/0236 , Y02E10/50
摘要： The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.
摘要翻译：根据本发明的织构化的透明导电层沉积在用于光电装置的基板上，并呈现由一系列凸起和中空形成的表面形态。其特征在于其中空具有半径大于25nm的圆形基部; 所述中空实际上是平滑的，也就是说，在它们表现出微观粗糙度的情况下，这些微粗糙度的平均高度小于5nm; 并且其侧面与基板的平面形成一个角度，其绝对值的中值在30°和75°之间。

8. 发明授权

US08368122B2 Multiple-junction photoelectric device 有权
标题翻译：多结光电器件
公开(公告)号：US08368122B2
公开(公告)日：2013-02-05
申请号：US13130205
申请日：2009-11-18
申请人： Didier Domine , Peter Cuony , Julien Bailat
发明人： Didier Domine , Peter Cuony , Julien Bailat
IPC分类号： H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113 , H01L31/06
CPC分类号： H01L31/202 , H01L31/02366 , H01L31/0547 , H01L31/0687 , H01L31/1824 , Y02E10/52 , Y02E10/544 , Y02E10/545 , Y02P70/521
摘要： A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom is smaller than α90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
摘要翻译：多结光电装置包括其上具有第一导电层的衬底，p-i-n或p-n构型的至少两个基本光电器件，其上具有第二导电层，以及在两个相邻的基本光电器件之间的至少一个中间层。中间层在入射光侧具有相对的顶面和底面，顶表面和底面分别具有包括倾斜元件表面的表面形态，因此α90底部小于α90顶部至少3°，优选为6°，更优选为10° °，甚至更优选15°; 其中α90top是中间层的顶面的90％的基本表面具有等于或小于该角度的倾角的角度，并且α90底部是底面的90％的基本表面的角度中间层具有等于或小于该角度的倾斜度。

9. 发明申请

US20110259410A1 THIN-FILM SILICON TANDEM CELL 审中-公开
标题翻译：薄膜硅胶灯泡
公开(公告)号：US20110259410A1
公开(公告)日：2011-10-27
申请号：US13140516
申请日：2010-01-18
申请人： Julien Bailat , Castens Lucie
发明人： Julien Bailat , Castens Lucie
IPC分类号： H01L31/06 , H01L31/0224
CPC分类号： H01L31/1804 , H01L31/03685 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A thin-film tandem photovoltaic cell comprises on a glass substrate a front TCO (3), an amorphous silicon cell as top cell (5), a semi-transparent reflector layer (7), a microcrystalline silicon bottom cell (9). Thereby, the semi-transparent reflector layer (7) is of n-doped silicon oxide with an index of refraction below 1.7. The thickness of the amorphous silicon top cell (5) is below 200 nm.
摘要翻译：薄膜串联光伏电池在玻璃基板上包括前TCO（3），非晶硅电池作为顶电池（5），半透明反射器层（7），微晶硅底电池（9）。因此，半透明反射层（7）是折射率低于1.7的n掺杂氧化硅。非晶硅顶部电池（5）的厚度低于200nm。

10. 发明申请

US20110240107A1 LARGE-AREA THIN-FILM-SILICON PHOTOVOLTAIC MODULES 审中-公开
标题翻译：大面积薄膜光伏模块
公开(公告)号：US20110240107A1
公开(公告)日：2011-10-06
申请号：US13079072
申请日：2011-04-04
申请人： Johannes Meier , Stefano Benagli , Julien Bailat , Daniel Borrello , Jerome Steinhauser , Jochen Hötzel , Lucie Castens , Jean-Baptiste Orhan , Yassine Djeridane , Evelyne Vallat-Sauvain , Ulrich Kroll
发明人： Johannes Meier , Stefano Benagli , Julien Bailat , Daniel Borrello , Jerome Steinhauser , Jochen Hötzel , Lucie Castens , Jean-Baptiste Orhan , Yassine Djeridane , Evelyne Vallat-Sauvain , Ulrich Kroll
IPC分类号： H01L31/06
CPC分类号： H01L31/076 , H01L31/022483 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： Micromorph tandem cells with stabilized efficiencies of 11.0% have been achieved on as-grown LPCVD ZnO front TCO at bottom cell thickness of just 1.3 μm in combination with an antireflection concept. Applying an advanced LPCVD ZnO front TCO stabilized tandem cells of 10.6% have been realized at a bottom cell thickness of only 0.8 μm. Implementing intermediate reflectors in Micromorph tandem cell devices allow for, compared to commercial SnO2, reduced optical losses when LPCVD ZnO is used. At present highest stabilized cell efficiency reached 11.3% incorporating an in-situ intermediate reflector with a bottom cell thickness of 1.6 μm.
摘要翻译：结合抗反射概念，在底部单元厚度为1.3μm的生长LPCVD ZnO前端TCO上实现了具有11.0％稳定效率的微米级串联电池。采用先进的LPCVD ZnO前TCO稳定的10.6％的串联电池已经实现在仅0.8μm的底部电池厚度。与商业SnO2相比，在Micromorph串联电池器件中实现中间反射器允许当使用LPCVD ZnO时减少光损耗。目前，最高稳定的电池效率达到11.3％，并结合了底部电池厚度为1.6μm的原位中间反射器。

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