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1. 发明授权

US09368667B1 Plasmon field effect transistor 有权
标题翻译：等离子场效应晶体管
公开(公告)号：US09368667B1
公开(公告)日：2016-06-14
申请号：US14171342
申请日：2014-02-03
申请人： Sung Jin Kim , Juhyung Yun
发明人： Sung Jin Kim , Juhyung Yun
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0352
CPC分类号： H01L31/1136 , H01L31/02327
摘要： A field effect transistor (FET) is provided. The FET includes a first material layer, second material layer and a third material layer. The third material layer includes an n-type silicon substrate layer and a gate electrode. The gate electrode includes an insulating substrate with at least one conducting metal. The second material layer is disposed on the third material layer. The first material layer is disposed on the second material layer. A source electrode is disposed on the first material layer. A drain electrode is disposed on the first material layer. A plurality of gold nanostructures are disposed on an active channel of the FET. The plurality of gold nanostructures are electrically isolated from the source electrode, drain electrode and gate electrode. The plurality of gold nanostructures contribute to a drain current of the FET based at least in part on plasmonic absorption of photons.
摘要翻译：提供场效应晶体管（FET）。 FET包括第一材料层，第二材料层和第三材料层。第三材料层包括n型硅衬底层和栅电极。栅电极包括具有至少一个导电金属的绝缘衬底。第二材料层设置在第三材料层上。第一材料层设置在第二材料层上。源电极设置在第一材料层上。漏电极设置在第一材料层上。多个金纳米结构设置在FET的有源沟道上。多个金纳米结构与源电极，漏电极和栅电极电隔离。至少部分地基于光子的等离子体吸收，多个金纳米结构有助于FET的漏极电流。

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