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    • 8. 发明申请
    • SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL PAIRING WITH COMPOSITIONAL TRANSITION LAYER
    • 具有纳米晶核和纳米晶体结构的具有组成过渡层的半导体结构
    • US20140117311A1
    • 2014-05-01
    • US13663300
    • 2012-10-29
    • Juanita N. Kurtin
    • Juanita N. Kurtin
    • H01L29/15H01L29/12
    • C09K11/883B82Y10/00B82Y20/00C09K11/025H01L29/0665H01L29/127H01L29/221H01L33/06H01L33/502
    • Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials.
    • 描述了具有纳米晶核和纳米晶体壳配对组成过渡层的半导体结构。 在一个示例中,半导体结构包括由第一半导体材料构成的纳米晶核。 由第二半导体材料构成的纳米晶体壳围绕纳米晶核。 组成过渡层设置在纳米晶核和纳米晶体壳之间并与之接触,并且具有中间到第一和第二半导体材料的组成。 在另一示例中,半导体结构包括由第一半导体材料构成的纳米晶核。 由第二半导体材料构成的纳米晶体壳围绕纳米晶核。 纳米晶体外壳围绕纳米晶体壳并由第三半导体材料组成。 组成过渡层设置在纳米晶体壳和纳米晶体外壳之间并与之接触,并且具有中间到第二和第三半导体材料的组成。
    • 9. 发明申请
    • LIGHTING DEVICE HAVING HIGHLY LUMINESCENT QUANTUM DOTS
    • 具有高亮度量子点的照明装置
    • US20140049155A1
    • 2014-02-20
    • US13589823
    • 2012-08-20
    • Juanita N. Kurtin
    • Juanita N. Kurtin
    • H05B33/02B82Y99/00
    • H01L33/502B82Y40/00C09K11/025C09K11/08H01L33/501H01L33/504H01L33/507
    • Lighting devices having highly luminescent quantum dots are described. In an example, a lighting apparatus includes a housing structure or a substrate. The lighting apparatus also includes a light emitting diode supported within the housing structure or disposed on the substrate, respectively. The lighting apparatus also includes a light conversion layer disposed above the light emitting diode. The light conversion layer includes a plurality of quantum dots. Each quantum dot includes an anisotropic nanocrystalline core having a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each quantum dot also includes a nanocrystalline shell having a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core.
    • 描述具有高发光量子点的照明装置。 在一个示例中,照明设备包括外壳结构或基板。 照明装置还包括支撑在壳体结构内或分别设置在基板上的发光二极管。 照明装置还包括设置在发光二极管上方的光转换层。 光转换层包括多个量子点。 每个量子点包括具有第一半导体材料并具有但不包括1.0和2.0之间的纵横比的各向异性纳米晶核。 每个量子点还包括具有至少部分地围绕各向异性纳米晶核的第二不同的半导体材料的纳米晶体壳。