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1. 发明申请

US20050270832A1 High-density phase change cell array and phase change memory device having the same 失效
标题翻译：具有相同的高密度相变元件阵列和相变存储器件
公开(公告)号：US20050270832A1
公开(公告)日：2005-12-08
申请号：US10929243
申请日：2004-08-30
申请人： Eu Chu , Ju Mo , Seong Park , Jung Kim , Hyun Lim , Pyeong Lee , Ja Jeong
发明人： Eu Chu , Ju Mo , Seong Park , Jung Kim , Hyun Lim , Pyeong Lee , Ja Jeong
IPC分类号： H01L27/115 , G11C11/00 , G11C16/02 , H01L27/24
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： The present invention relates generally to a phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair formed on a semiconductor substrate to be adjacent to each other while each of the first and second access transistor pairs having a common drain, phase change resistance elements formed on source regions of the access transistors, respectively, and a semiconductor region formed on the same plane as the common drains to electrically connect the common drains of the first and second transistor pairs. The phase change memory cell array and the memory device of the present invention are suitable for the implementation of a high-density semiconductor device, and capable of improving the reliability of a contact forming process by securing a sufficient space for the contact forming process.
摘要翻译：本发明一般涉及一种相变存储器件，更具体地，涉及一种适用于实现高密度存储器件的相变存储单元阵列。相变存储单元阵列包括形成在半导体衬底上以彼此相邻的第一存取晶体管对和第二存取晶体管对，而第一和第二存取晶体管对中的每一个具有共同的漏极，相变电阻元件形成在分别与存取晶体管的源极区以及形成在与公共漏极相同的平面上的半导体区域以电连接第一和第二晶体管对的公共漏极。本发明的相变存储单元阵列和存储器件适用于高密度半导体器件的实现，并且通过确保用于接触形成工艺的足够空间能够提高接触形成工艺的可靠性。

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