专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060154460A1 Self-aligned contact method 审中-公开
标题翻译：自对准接触方式
公开(公告)号：US20060154460A1
公开(公告)日：2006-07-13
申请号：US11293126
申请日：2005-12-05
申请人： Serah Yun , Changki Hong , Jaedong Lee , Juseon Goo , Youngok Kim , Jeongheon Park , Joonsang Park , Keunhee Bai , Myoungho Jung
发明人： Serah Yun , Changki Hong , Jaedong Lee , Juseon Goo , Youngok Kim , Jeongheon Park , Joonsang Park , Keunhee Bai , Myoungho Jung
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897
摘要： In one aspect, a self-aligned contact method is provided in which a substrate having a plurality of structures are spaced apart over a surface of the substrate, and a sacrificial film is deposited over and between the plurality of structures, where a material of the sacrificial film has a given withstand temperature. The sacrificial film is patterned to expose a portion of the substrate adjacent the plurality of structures. An insulating layer is deposited over the sacrificial film and the exposed portion of the substrate, where the depositing of the insulating layer includes a heat treatment at a temperature which is less than the withstand temperature of the sacrificial film material. The insulating layer is planarized to expose the sacrificial film, and the sacrificial film is removed to expose respective areas between the plurality of structures. The respective areas between the plurality of structures are filled with a conductive material.
摘要翻译：在一个方面，提供一种自对准接触方法，其中具有多个结构的衬底在衬底的表面上间隔开，并且牺牲膜沉积在多个结构之间并且在多个结构之间，其中，牺牲膜具有给定的耐受温度。牺牲膜被图案化以暴露与多个结构相邻的衬底的一部分。绝缘层沉积在牺牲膜和衬底的暴露部分上，其中绝缘层的沉积包括在小于牺牲膜材料的耐受温度的温度下的热处理。平面化绝缘层以暴露牺牲膜，并且去除牺牲膜以暴露多个结构之间的相应区域。多个结构之间的各个区域填充有导电材料。

2. 发明申请

US20120049107A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME 审中-公开
标题翻译：用于化学机械抛光方法的浆料组合物和使用其形成相变存储器件的方法
公开(公告)号：US20120049107A1
公开(公告)日：2012-03-01
申请号：US13212448
申请日：2011-08-18
申请人： Joonsang PARK , Euihoon JUNG , Boun YOON , Jaedong LEE
发明人： Joonsang PARK , Euihoon JUNG , Boun YOON , Jaedong LEE
IPC分类号： C09K13/04 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： A slurry composition for chemical mechanical polishing of a polishing target layer containing a phase change material and a method of forming a phase change memory device using the same, the slurry composition including abrasive particles; and a nonionic surfactant, wherein a concentration of the nonionic surfactant in the slurry composition is about 100 ppb to about 300 ppb.
摘要翻译：一种用于化学机械抛光含有相变材料的抛光对象层的浆料组合物和使用其形成相变记忆装置的方法，所述浆料组合物包括磨料颗粒; 和非离子表面活性剂，其中所述浆料组合物中的非离子表面活性剂的浓度为约100ppb至约300ppb。

3. 发明申请

US20100051896A1 VARIABLE RESISTANCE MEMORY DEVICE USING A CHANNEL-SHAPED VARIABLE RESISTANCE PATTERN 审中-公开
标题翻译：使用通道形变可变电阻图案的可变电阻存储器件
公开(公告)号：US20100051896A1
公开(公告)日：2010-03-04
申请号：US12549887
申请日：2009-08-28
申请人： Jeonghee Park , Yongho Ha , Dohyung Kim , Joonsang Park , Hyeyoung Park , Hyun-Suk Kwon
发明人： Jeonghee Park , Yongho Ha , Dohyung Kim , Joonsang Park , Hyeyoung Park , Hyun-Suk Kwon
IPC分类号： H01L47/00
CPC分类号： H01L27/24
摘要： A variable resistance memory device includes a substrate and a plurality of spaced apart lower electrodes on the substrate. The device further includes a variable resistance material pattern comprising two vertically opposed wall members connected by a bottom member disposed on and electrically connected to at least one of the plurality of lower electrodes and an upper electrode on the variable resistance material pattern. An area of contact of the variable resistance material pattern with the at least one lower electrode may be rectangular, circular, ring-shaped, or arc-shaped. Fabrication methods are also described.
摘要翻译：可变电阻存储器件包括衬底和在衬底上的多个间隔开的下电极。该装置还包括可变电阻材料图案，包括两个垂直相对的壁构件，该两个垂直相对的壁构件通过设置在多个下部电极中的至少一个上并与其电连接的底部构件和可变电阻材料图案上的上部电极连接。可变电阻材料图案与至少一个下电极的接触区域可以是矩形，圆形，环形或弧形。还描述了制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式