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    • 3. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20100290296A1
    • 2010-11-18
    • US12490690
    • 2009-06-24
    • Joong-Ho Lee
    • Joong-Ho Lee
    • G11C29/00
    • G11C29/838G11C29/24G11C29/816
    • A semiconductor memory device includes a plurality of memory cell matrixes each of which contains plural memory cell arrays whose number is lager than 2n and smaller than 2n+1, n being a natural number. The semiconductor memory device includes normal memory cell arrays including 2m numbers of memory cell arrays of the plurality of memory cell matrixes, m being a bit of addresses, wherein a data access operation is performed on normal memory cells in the normal memory cell arrays as normal word lines corresponding to the normal memory cells are activated in response to the addresses, and additional redundancy memory cell arrays in the plurality of memory cell matrixes, wherein repair-expected memory cells in the normal memory cell arrays are replaced with the additional redundancy memory cell arrays as redundancy word lines corresponding to the additional redundancy memory cells are activated in response to the addresses corresponding to the repair-expected memory cells.
    • 半导体存储器件包括多个存储单元矩阵,每个存储单元矩阵包含多于2n并且小于2n + 1的多个存储单元阵列,n是自然数。 半导体存储器件包括包括多个存储单元矩阵的2m个存储单元阵列的正常存储单元阵列,m是地址位,其中在正常存储单元阵列中的正常存储单元上执行数据访问操作,如正常 对应于正常存储器单元的字线响应于地址被激活,并且多个存储单元矩阵中的附加冗余存储单元阵列,其中正常存储器单元阵列中的修复预期存储单元被替换为附加冗余存储单元 对应于附加冗余存储单元的冗余字线的阵列响应于对应于修复预期存储单元的地址被激活。
    • 5. 发明申请
    • SEMICONDUCTOR MEMORY APPARATUS
    • 半导体存储器
    • US20090147614A1
    • 2009-06-11
    • US12170262
    • 2008-07-09
    • Joong-Ho Lee
    • Joong-Ho Lee
    • G11C8/00
    • G11C11/4097G11C7/02G11C7/08G11C7/12G11C7/18G11C11/4091G11C11/4094
    • A semiconductor memory includes a cell mat configured to include a plurality of memory cells to which a first bit line pair or a second bit line pair is connected; a sense amplifier configured to amplify a positive sensing line and a negative sensing line in response to a first bit line equalize signal; a column selecting unit configured to connect the positive sensing line and the negative sensing line to a first data bus and a second data bus, respectively, in response to a column selection signal; and a share control unit configured to connect the positive sensing line and a positive first bit line of the first bit line pair or a positive second bit line of the second bit line pair in response to a second bit line equalize signal, a positive share control signal and a negative share control signal.
    • 半导体存储器包括被配置为包括连接第一位线对或第二位线对的多个存储单元的单元阵列; 感测放大器,被配置为响应于第一位线均衡信号放大正感测线路和负感测线路; 列选择单元,被配置为分别响应于列选择信号将正感测线和负感测线连接到第一数据总线和第二数据总线; 以及共享控制单元,被配置为响应于第二位线均衡信号,连接第一位线对的正感测线和正的第一位线或第二位线对的正的第二位线,正共享控制 信号和负共享控制信号。
    • 7. 发明授权
    • Data error check circuit, data error check method, data transmission method using data error check function, semiconductor memory apparatus and memory system using data error check function
    • 数据错误检查电路,数据错误检查方法,使用数据错误检查功能的数据传输方法,使用数据错误检查功能的半导体存储器和存储器系统
    • US08504903B2
    • 2013-08-06
    • US12970869
    • 2010-12-16
    • Joong Ho Lee
    • Joong Ho Lee
    • H03M13/00
    • G06F11/1004G11C2029/0411
    • Various embodiments of a memory system are disclosed. In one exemplary embodiment, the memory system may include a semiconductor memory apparatus configured to generate error check signals in a column direction and a row direction of data groups to be transmitted through a plurality of data input/output terminals in a read operation and output the error check signals together with the data groups, and a memory controller configured to control data read/write operations of the semiconductor memory apparatus, generate error check signals by performing error check in a column direction and a row direction of data groups to be transmitted in a write operation, and provide the error check signals to the semiconductor memory apparatus together with the data groups.
    • 公开了存储器系统的各种实施例。 在一个示例性实施例中,存储器系统可以包括:半导体存储器装置,被配置为在读操作中通过多个数据输入/输出端发送数据组的列方向和行方向的错误校验信号,并输出 错误检查信号与数据组一起,以及存储器控制器,被配置为控制半导体存储器件的数据读/写操作,通过在要发送的数据组的列方向和行方向上执行错误校验来生成错误校验信号 写操作,并且与数据组一起向半导体存储装置提供错误检查信号。
    • 8. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US08279698B2
    • 2012-10-02
    • US13285445
    • 2011-10-31
    • Joong-Ho Lee
    • Joong-Ho Lee
    • G17C7/02
    • G11C11/4097G11C7/02G11C7/1066G11C7/18G11C2207/005
    • A semiconductor memory device includes first and second sub-memory-cell areas configured to form a memory cell matrix and include a first bit line and a second bit line respectively to form a data transfer path corresponding to a predetermined memory cell, an additional bit line configured to cross the first sub-memory-cell area and form a data transfer path by being connected with the second bit line and a sensing and amplifying unit configured to sense and amplify data inputted through the additional bit line and the first bit line.
    • 半导体存储器件包括被配置为形成存储单元矩阵并且分别包括第一位线和第二位线的第一和第二子存储器单元区域,以形成对应于预定存储器单元的数据传输路径,附加位线 被配置为跨越第一子存储单元区域并通过与第二位线连接形成数据传送路径;感测和放大单元,被配置为感测和放大通过附加位线和第一位线输入的数据。