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1. 发明授权

US06624036B2 Transistor in semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06624036B2
公开(公告)日：2003-09-23
申请号：US10026958
申请日：2001-12-27
申请人： Joo Hyoung Lee
发明人： Joo Hyoung Lee
IPC分类号： H01L21336
CPC分类号： H01L29/66628 , H01L21/76264 , H01L21/76267 , H01L21/76283 , H01L21/823481 , H01L29/665 , H01L29/66636
摘要： The present invention relates to a transistor in a semiconductor device and method of manufacturing the same. Therefore, the present invention can obtain an effect such as using a SOI substrate or a SIMOX substrate and can prevent a lowering in an electrical characteristic of the device, by using a bulk substrate made of a single crystal silicon but forming an insulating layer into which oxygen is injected below a LDD region.

2. 发明授权

US5894203A Horizontal retrace time adjustment pulse generating circuit for a display device 失效
标题翻译：用于显示装置的水平回扫时间调整脉冲发生电路
公开(公告)号：US5894203A
公开(公告)日：1999-04-13
申请号：US953556
申请日：1997-10-17
申请人： Joo-Hyoung Lee
发明人： Joo-Hyoung Lee
IPC分类号： G09G1/06 , H04N3/233 , G09G5/18 , H01J29/70 , H04N3/22
CPC分类号： H04N3/233
摘要： A horizontal retrace time adjustment pulse generating circuit includes a microcomputer for outputting a horizontal flyback signal and an analog voltage based on an input horizontal synchronizing frequency; oscillation duty adjusting circuit for outputting a duty-cycle adjusting signal based on the analog voltage of the microcomputer; a monostable multivibrator for outputting a rectangular wave based on the horizontal flyback signal of the microcomputer and the duty-cycle adjusting signal of the oscillation duty adjusting circuit; feedback signal detecting circuit for detecting a horizontal flyback pulse from a horizontal deflection circuit and outputting the detected signal; and signal coupling circuit for coupling the rectangular wave of the monostable multivibrator and the detected signal from the feedback signal detecting circuit and outputting a result of the coupling as a time control pulse for horizontal retrace.
摘要翻译：水平回扫时间调整脉冲发生电路包括微型计算机，用于输出水平反激信号和基于输入水平同步频率的模拟电压; 振荡占空比调整电路，用于输出基于微型计算机的模拟电压的占空比调整信号; 用于输出基于微型计算机的水平反激信号的矩形波的单稳态多谐振荡器和振荡占空比调节电路的占空比调整信号; 反馈信号检测电路，用于检测来自水平偏转电路的水平反激脉冲并输出检测信号; 以及用于耦合单稳态多谐振荡器的矩形波和来自反馈信号检测电路的检测信号的信号耦合电路，并输出耦合的结果作为用于水平回扫的时间控制脉冲。

3. 发明授权

US06229681B1 Switching mode power supply apparatus having a low voltage protection circuit 有权
标题翻译：具有低电压保护电路的开关电源装置
公开(公告)号：US06229681B1
公开(公告)日：2001-05-08
申请号：US09263807
申请日：1999-03-08
申请人： Joo-Hyoung Lee
发明人： Joo-Hyoung Lee
IPC分类号： H02H300
CPC分类号： H02M1/36 , H02H7/1222 , H02H11/006 , H02M1/32 , H02M3/33507
摘要： A switching mode power supply apparatus has a low voltage protection circuit with a simple construction. The apparatus is not actuated or have its operation stopped under brown-out conditions where the voltage value of the input is reduced to a predetermined value. The switching mode power supply apparatus includes a first rectifying and smoothing circuit, an actuating power supply unit having an overvoltage protection circuit, a switching transistor, a switching transformer, a switching transformer, a second rectifying and smoothing circuit, a third rectifying and smoothing circuit, a constant-voltage circuit, a first protection circuit, and a second protection circuit.
摘要翻译：开关电源装置具有结构简单的低压保护电路。在输入的电压值降低到预定值的欠压条件下，该装置未被致动或者使其操作停止。开关模式电源装置包括第一整流平滑电路，具有过电压保护电路的驱动电源单元，开关晶体管，开关变压器，开关变压器，第二整流和平滑电路，第三整流和平滑电路，恒压电路，第一保护电路和第二保护电路。

4. 发明申请

US20130109016A1 PRIMER COMPOSITION FOR AMPLIFYING A GENE REGION HAVING VARIOUS VARIATIONS IN A TARGET GENE 审中-公开
标题翻译：用于放大目标基因中各种变异基因区的初步组合物
公开(公告)号：US20130109016A1
公开(公告)日：2013-05-02
申请号：US13696694
申请日：2011-04-20
申请人： Wangdon Yoo , Sun Young Hwang , Soo-Kyung Shin , Ji Young Shin , Joo Hyoung Lee , Sun Min Park , Sun Pyo Hong , Sukjoon Kim , Soo-Ok Kim
发明人： Wangdon Yoo , Sun Young Hwang , Soo-Kyung Shin , Ji Young Shin , Joo Hyoung Lee , Sun Min Park , Sun Pyo Hong , Sukjoon Kim , Soo-Ok Kim
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6876 , C12Q1/6858 , C12Q1/686 , C12Q1/6872 , C12Q1/6881 , C12Q1/706 , C12Q1/708 , C12Q2600/156 , C12Q2525/131 , C12Q2527/143 , C12Q2537/149 , C12Q2549/119 , C12Q2565/627
摘要： The present invention provides a primer composition for amplifying a gene region having various variations in a target gene comprising: a first primer group comprising at least one primer specific to at least one template including a genotype-analyzable sequence of a genetically variant base sequence subjected to be analyzed in the target gene; and a second primer group comprising at least one primer designed by selecting one primer having the greatest number of shared bases from the primers of the first primer group and by using the selected primer as a reference, the primer of the second primer group binding specifically to the template or binding complementarily to the template with allowing mismatch of up to three successive bases or 1 to 2 bases in the vicinity of the 3′ end of the template.
摘要翻译：本发明提供了用于扩增靶基因各种变异的基因区域的引物组合物，其包含：第一引物组，其包含至少一种特异于至少一种模板的引物，所述引物包含经受基因变异的基因序列的基因型可分析序列在目标基因中进行分析; 以及第二引物组，其包含通过从所述第一引物组的引物中选择具有最多共享碱基的一个引物而设计的至少一个引物，并且通过使用所选择的引物作为参照，所述第二引物组的引物特异性结合该模板或结合物与模板互补，允许在模板的3'末端附近允许多达三个连续碱基或1至2个碱基的错配。

5. 发明授权

US07510918B2 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US07510918B2
公开(公告)日：2009-03-31
申请号：US11499568
申请日：2006-08-04
申请人： Tae-Woong Kang , Joo-Hyoung Lee
发明人： Tae-Woong Kang , Joo-Hyoung Lee
IPC分类号： H01L21/02
CPC分类号： H01L29/66787 , H01L21/28123 , H01L29/0692 , H01L29/66651
摘要： In a transistor and a method of manufacturing the transistor, the transistor includes a dummy structure enclosing source/drain structures and channel structures. Thus, a gate electrode of the transistor may be efficiently formed over the channel structures. In addition, the source/drain structure may not grow exceedingly in an epitaxial growth process employed for forming the source/drain structure.
摘要翻译：在晶体管和制造晶体管的方法中，晶体管包括封装源极/漏极结构和沟道结构的虚拟结构。因此，可以在沟道结构上有效地形成晶体管的栅电极。此外，在用于形成源极/漏极结构的外延生长工艺中，源极/漏极结构可能不会极大地增长。

6. 发明授权

US06345364B1 Power supply of display apparatus with universal serial bus device 有权
标题翻译：具有通用串行总线设备的显示设备电源
公开(公告)号：US06345364B1
公开(公告)日：2002-02-05
申请号：US09287340
申请日：1999-04-07
申请人： Joo-Hyoung Lee
发明人： Joo-Hyoung Lee
IPC分类号： G06F126
CPC分类号： G06F1/3265 , G06F1/266 , G06F1/3203 , G09G1/005 , G09G2330/02 , G09G2330/021 , Y02D10/153
摘要： a power supply of the display apparatus includes a switching mode power supply forming the main power supply of the display apparatus. The power supply of this invention includes an auxiliary power supply for supplying power with a universal serial bus (USB) hub. The power supply further includes a display power management signaling (DPMS) control circuit for managing the power saving between the full-on, standby, suspend, and power-off modes, a relay switch is provided across the power line directed to the main power supply. The DPMS control circuit responds to input status of the horizontal and vertical synchronization signals (Hsync, Vsync) and, in the power-off mode, it produces a control signal that cuts off the relay switch. The power supply of this invention provides a stable supply power with the USB hub even if the display apparatus enters the power-off mode of DPMS. Further, the power supply of this invention can cut off power supply directed to the main power supply when the display apparatus enters the power-off mode.
摘要翻译：显示装置的电源包括形成显示装置的主电源的开关模式电源。本发明的电源包括用于向通用串行总线（USB）集线器供电的辅助电源。电源还包括显示电源管理信号（DPMS）控制电路，用于管理全开，待机，暂停和关机模式之间的功率节省，在指向主电源的电力线之间提供继电器开关供应。 DPMS控制电路响应水平和垂直同步信号（Hsync，Vsync）的输入状态，并且在断电模式下，它产生切断继电器开关的控制信号。即使显示装置进入DPMS的断电模式，本发明的电源也提供与USB集线器的稳定供电。此外，本发明的电源可以在显示装置进入断电模式时切断针对主电源的电源。

7. 发明授权

US5847511A Automatic image rotation compensation circuit and method 失效
标题翻译：自动图像旋转补偿电路及方法
公开(公告)号：US5847511A
公开(公告)日：1998-12-08
申请号：US850929
申请日：1997-05-02
申请人： Joo-Hyoung Lee
发明人： Joo-Hyoung Lee
IPC分类号： H04N9/29 , H01J29/06
CPC分类号： H04N9/29
摘要： An automatic image rotation compensation circuit includes: a terrestrial magnetic field detecting unit for detecting horizontal and vertical terrestrial magnetic fields of a place where a display device is installed; an amplifying unit for amplifying the horizontal and vertical terrestrial magnetic field values detected by the terrestrial magnetic field detecting unit; an analog-to-digital converting unit for converting the analog terrestrial magnetic field values amplified by the amplifying unit into digital signals; a memory for storing image compensation reference values corresponding to various terrestrial magnetic field values; a microcomputer for receiving the digital terrestrial magnetic field values from the analog-to-digital converting unit and reading compensation values corresponding to the terrestrial magnetic field values; a digital-to-analog converting unit for converting the digital signals from the microcomputer into analog signals; and a deflection controller for performing a differential amplification on the signals transmitted from the digital-to-analog converting unit and changing a current flowing through rotation coils to control a tilt.
摘要翻译：自动图像旋转补偿电路包括：地面磁场检测单元，用于检测安装显示装置的地方的水平和垂直地面磁场; 放大单元，用于放大由地磁场检测单元检测的水平和垂直的地磁场值; 模拟数字转换单元，用于将由放大单元放大的模拟地磁场值转换为数字信号; 用于存储对应于各种陆地磁场值的图像补偿参考值的存储器; 微型计算机，用于从模数转换单元接收数字地面磁场值，并读取对应于地面磁场值的补偿值; 用于将来自微型计算机的数字信号转换成模拟信号的数模转换单元; 以及偏转控制器，用于对从数模转换单元发送的信号执行差分放大，并改变流过旋转线圈的电流以控制倾斜。

8. 发明授权

US5714849A Circuit and method for adjusting horizontal retrace time and limiting pulse peak in display device 失效
标题翻译：用于调整显示装置中的水平回扫时间和限制脉冲峰值的电路和方法
公开(公告)号：US5714849A
公开(公告)日：1998-02-03
申请号：US785972
申请日：1997-01-22
申请人： Joo-Hyoung Lee
发明人： Joo-Hyoung Lee
IPC分类号： H04N3/16 , G09G1/04 , H04N3/24 , H04N3/27 , H01J29/70 , H01J29/76
CPC分类号： H04N3/27 , G09G1/04
摘要： A circuit for adjusting a horizontal retrace time and limiting a pulse peak in a display device includes a microcomputer for receiving a horizontal synchronous frequency and converting the horizontal synchronous frequency into a first voltage. A pulse generator compares the first voltage provided from the microcomputer with a triangular waveform to adjust a width of a retrace time adjusting pulse. A transformer receives an output voltage from the pulse generator to generate an induced voltage. A switching unit performs a switching operation in accordance with a magnitude of the induced voltage provided from the transformer. A clamping unit clamps the induced voltage provided from the transformer to limit a voltage peak value. A charging/discharging unit performs charging and discharging operations according to an output of the switching unit. A feedback unit rectifies, smoothes and divides the induced voltage at a secondary side of the transformer to generate a rectified, smoothed and divided voltage, and feeds the rectified, smoothed and divided voltage back to the pulse generator.
摘要翻译：用于调整水平回扫时间并限制显示装置中的脉冲峰值的电路包括：微型计算机，用于接收水平同步频率并将水平同步频率转换成第一电压。脉冲发生器将微计算机提供的第一电压与三角形波形进行比较，以调整回扫时间调整脉冲的宽度。变压器接收来自脉冲发生器的输出电压以产生感应电压。开关单元根据从变压器提供的感应电压的大小执行开关操作。钳位单元钳位从变压器提供的感应电压以限制电压峰值。充放电单元根据开关单元的输出执行充放电操作。反馈单元对变压器的次级侧的感应电压进行整流，平滑和分频，以产生整流，平滑和分压，并将整流，平滑和分压的电压馈送回脉冲发生器。

9. 发明申请

US20070293045A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070293045A1
公开(公告)日：2007-12-20
申请号：US11808981
申请日：2007-06-14
申请人： Ki-Seog Youn , Jong-Hyon Ahn , Joo-Hyoung Lee , Kwang-Duk Kim
发明人： Ki-Seog Youn , Jong-Hyon Ahn , Joo-Hyoung Lee , Kwang-Duk Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/76224
摘要： A semiconductor device may include a semiconductor substrate having a trench, a device isolation layer filling the trench, and a liner nitride layer disposed between the semiconductor substrate and the device isolation layer. The device isolation layer may additionally cover a portion of the substrate surrounding the trench. The liner nitride layer may have an upper portion and a lower portion, wherein the upper portion may be thinner than the lower portion. The liner nitride layer may reduce or prevent a recess from being generated between an active region and a device isolation region. Accordingly, a relatively high-quality semiconductor device may be fabricated using a simplified process.
摘要翻译：半导体器件可以包括具有沟槽的半导体衬底，填充沟槽的器件隔离层以及设置在半导体衬底和器件隔离层之间的衬里氮化物层。器件隔离层可以另外覆盖围绕沟槽的衬底的一部分。衬里氮化物层可以具有上部和下部，其中上部可以比下部更薄。衬里氮化物层可以减少或防止在有源区和器件隔离区之间产生凹陷。因此，可以使用简化的工艺来制造相对高质量的半导体器件。

10. 发明申请

US20070034962A1 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20070034962A1
公开(公告)日：2007-02-15
申请号：US11499568
申请日：2006-08-04
申请人： Tae-Woong Kang , Joo-Hyoung Lee
发明人： Tae-Woong Kang , Joo-Hyoung Lee
IPC分类号： H01L29/94
CPC分类号： H01L29/66787 , H01L21/28123 , H01L29/0692 , H01L29/66651
摘要： In a transistor and a method of manufacturing the transistor, the transistor includes a dummy structure enclosing source/drain structures and channel structures. Thus, a gate electrode of the transistor may be efficiently formed over the channel structures. In addition, the source/drain structure may not grow exceedingly in an epitaxial growth process employed for forming the source/drain structure.
摘要翻译：在晶体管和制造晶体管的方法中，晶体管包括封装源极/漏极结构和沟道结构的虚拟结构。因此，可以在沟道结构上有效地形成晶体管的栅电极。此外，在用于形成源极/漏极结构的外延生长工艺中，源极/漏极结构可能不会极大地增长。

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