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1. 发明授权

US08554162B2 High efficiency power amplifier 有权
标题翻译：高效率功率放大器
公开(公告)号：US08554162B2
公开(公告)日：2013-10-08
申请号：US13197022
申请日：2011-08-03
申请人： Jonas Lindstrand , Carl Bryant , Henrik Sjöland
发明人： Jonas Lindstrand , Carl Bryant , Henrik Sjöland
IPC分类号： H01Q11/12 , H04B1/04 , H03F3/45 , H03F3/16
CPC分类号： H03F1/523 , H03F1/565 , H03F3/2171 , H03F3/245 , H03F3/45188 , H03F2200/387 , H03F2200/391 , H03F2203/45318 , H03F2203/45332 , H03F2203/45396 , H03F2203/45631 , H03F2203/45638 , H03H7/38
摘要： A power amplifier circuit utilizes a cross-coupled tapped cascade topology together with a technique of applying an RF injection current into a wideband node to provide a single-stage power amplifier with improved PAE, output power, and gain over a wide RF band. The amplifier circuit comprises a cross-coupled cascade transistor unit comprising a pair of cross-coupled cascode transistors, a cross-coupled switching transistor unit comprising a pair of cross-coupled switching transistors, and an RF current generator. RF current generator generates a differential RF injection current, while switching transistor unit amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit and the cascode transistor unit further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit. The output signal amplitude generally depends on the differential injection current and the supply voltage VDD applied to the power amplifier circuit.
摘要翻译：功率放大器电路利用交叉耦合抽头级联拓扑以及将RF注入电流施加到宽带节点中以提供具有改进的PAE，输出功率和宽RF频带上的增益的单级功率放大器的技术。放大器电路包括交叉耦合级联晶体管单元，其包括一对交叉耦合共源共栅晶体管，包括一对交叉耦合开关晶体管的交叉耦合开关晶体管单元和RF电流发生器。 RF电流发生器产生差分RF注入电流，而开关晶体管单元放大注入电流以在放大器电路的宽带节点处产生放大的注入电流，并且共源共栅晶体管单元进一步放大注入电流以在输出放大电路。输出信号幅度通常取决于差分注入电流和施加到功率放大器电路的电源电压VDD。

2. 发明申请

US20130033321A1 HIGH EFFICIENCY POWER AMPLIFIER 有权
标题翻译：高效功率放大器
公开(公告)号：US20130033321A1
公开(公告)日：2013-02-07
申请号：US13197022
申请日：2011-08-03
申请人： Jonas Lindstrand , Carl Bryant , Henrik Sjöland
发明人： Jonas Lindstrand , Carl Bryant , Henrik Sjöland
IPC分类号： H03F3/45 , H03F1/22
CPC分类号： H03F1/523 , H03F1/565 , H03F3/2171 , H03F3/245 , H03F3/45188 , H03F2200/387 , H03F2200/391 , H03F2203/45318 , H03F2203/45332 , H03F2203/45396 , H03F2203/45631 , H03F2203/45638 , H03H7/38
摘要： A power amplifier circuit utilizes a cross-coupled tapped cascade topology together with a technique of applying an RF injection current into a wideband node to provide a single-stage power amplifier with improved PAE, output power, and gain over a wide RF band. The amplifier circuit comprises a cross-coupled cascade transistor unit comprising a pair of cross-coupled cascode transistors, a cross-coupled switching transistor unit comprising a pair of cross-coupled switching transistors, and an RF current generator. RF current generator generates a differential RF injection current, while switching transistor unit amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit and the cascode transistor unit further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit. The output signal amplitude generally depends on the differential injection current and the supply voltage VDD applied to the power amplifier circuit.
摘要翻译：功率放大器电路利用交叉耦合抽头级联拓扑以及将RF注入电流施加到宽带节点中以提供具有改进的PAE，输出功率和宽RF频带上的增益的单级功率放大器的技术。放大器电路包括交叉耦合级联晶体管单元，其包括一对交叉耦合共源共栅晶体管，包括一对交叉耦合开关晶体管的交叉耦合开关晶体管单元和RF电流发生器。 RF电流发生器产生差分RF注入电流，而开关晶体管单元放大注入电流以在放大器电路的宽带节点处产生放大的注入电流，并且共源共栅晶体管单元进一步放大注入电流以在输出放大电路。输出信号幅度通常取决于差分注入电流和施加到功率放大器电路的电源电压VDD。

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