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    • 3. 发明专利
    • DE453165C
    • 1927-11-30
    • DEJ0027582
    • 1926-03-03
    • JONAS JONSSON
    • B61D39/00
    • 262,478. Jonsson, J. Dec. 7, 1925, [Convention date]. Covers, wagon and like.-A railway wagon is provided with roof shutters 1, 2 extending longitudinally of the wagon, the shutters being movable transversely outwards outside the wagon in curved paths in such manner that the shutters in open position do not extend in any essential degree outside the profile of the wagon. The end of each shutter, Fig. 2, is pivoted at 4 to the end of the wagon and is adapted to be moved to the position shown dotted by a curved rack 10. Fig. 3, on the shutter engaged by a toothed pinion 9 operated by a handle 18 through bevel gearing. A longitudinal beam 6 provides a mid-support for transversely curved beams 5 which form guides for rollers 7 on the shutter.
    • 9. 发明授权
    • Method and arrangement of a buried capacitor, and a buried capacitor
arranged according to said method
    • 埋地电容器的方法和布置以及根据所述方法布置的埋入式电容器
    • US6140199A
    • 2000-10-31
    • US90218
    • 1998-06-04
    • Torbjorn LarssonJonas Jonsson
    • Torbjorn LarssonJonas Jonsson
    • H01L27/04H01L21/822H01L29/94H01L21/20
    • H01L29/945
    • The present invention relates to a method for arrangement of a buried capacitor on a substrate or the like, and a buried capacitor arranged according to the method. In order to diminish the resistive losses in a capacitor and to make it more efficient, in semi-conductor circuits, instead of the polycrystalline layer, one or more bodies of metal such as aluminum or tungsten may be used. This has been made possible using a new technique in which a trench filling of conducting material is etched away without removal through etching of the insulating layer in the trench. After the removal through etching of the trench filling, the trench is filled using the metal as above, whereby the insulating layer between the conducting material and the metal body will separate two conducting surfaces, thereby forming the buried capacitor.
    • 本发明涉及一种在基板等上布置埋入式电容器的方法,以及根据该方法布置的埋入式电容器。 为了减少电容器中的电阻损耗并使其更有效,在半导体电路中,代替多晶层,可以使用一个或多个金属体例如铝或钨。 这已经可以使用一种新技术,其中通过蚀刻沟槽中的绝缘层而不去除导电材料的沟槽填充物而被蚀刻掉。 在通过蚀刻沟槽填充物去除之后,使用如上所述的金属填充沟槽,由此导电材料和金属体之间的绝缘层将分离两个导电表面,从而形成埋入的电容器。