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1. 发明授权

US3938175A Polycrystalline silicon pressure transducer 失效
标题翻译：多晶硅压力传感器
公开(公告)号：US3938175A
公开(公告)日：1976-02-10
申请号：US526580
申请日：1974-11-25
申请人： James M. Jaffe , John Y. W. Seto
发明人： James M. Jaffe , John Y. W. Seto
IPC分类号： G01L9/00 , H01L21/00 , H01L29/84 , H01L29/04 , H01L29/06
CPC分类号： H01L29/84 , G01L9/0054 , H01L21/00 , Y10S438/977 , Y10T29/49103
摘要： A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.
摘要翻译：一种具有提供极压敏和温度稳定装置的多晶硅隔膜的半导体压力传感器及其制造方法。可以容易地将多晶硅气相沉积在覆盖晶片或基底，优选单晶硅表面的耐蚀刻层上。多晶硅的这种气相沉积更准确和一致地限定了通过研磨或蚀刻可获得的膜的厚度。形成在隔膜中的压力响应电阻器通过多晶硅的较高电阻率自动电隔离。因此，不需要隔膜上的PN结隔离和钝化氧化物，从而导致温度稳定性的提高。

2. 发明授权

US4502894A Method of fabricating polycrystalline silicon resistors in integrated circuit structures using outdiffusion 失效
标题翻译：在使用外扩散的集成电路结构中制造多晶硅电阻器的方法
公开(公告)号：US4502894A
公开(公告)日：1985-03-05
申请号：US522934
申请日：1983-08-12
申请人： John Y. W. Seto , Ken K. Y. Su
发明人： John Y. W. Seto , Ken K. Y. Su
IPC分类号： H01L21/02 , H01L21/3115 , H01L21/3215 , H01L21/20
CPC分类号： H01L28/20 , H01L21/31155 , H01L21/32155
摘要： A process of fabricating a polycrystalline silicon resistor on a semiconductor structure is disclosed. According to the process insulating material is fabricated over selected regions of the semiconductor structure 10, and selected impurity 18 introduced into the insulating material, typically in conjunction with other process operations useful in fabricating semiconductor structures. Undoped regions of polycrystalline silicon 21 are then formed on the surface of the insulating material 15 and the entire structure is treated to cause the dopant in the insulating material 15 to out diffuse into the undoped polycrystalline silicon to thereby create resistors. The treating operation is typically the heat treatment performed in conjunction with other process operations in the fabrication of integrated circuits. In one embodiment the introduction of impurities into the insulating material places the impurities at a depth such that no out diffusion will occur at the selected process parameters except where the field oxide has been selectively thinned using an etching or other known process.
摘要翻译：公开了一种在半导体结构上制造多晶硅电阻器的工艺。根据该工艺，通常在半导体结构10的选定区域上制造绝缘材料，以及引入到绝缘材料中的选定杂质18，通常与可用于制造半导体结构的其它工艺操作相结合。然后在绝缘材料15的表面上形成多晶硅21的未掺杂区域，并且整个结构被处理以使绝缘材料15中的掺杂剂扩散到未掺杂的多晶硅中，从而形成电阻器。处理操作通常是与集成电路制造中的其它工艺操作相结合的热处理。在一个实施例中，将杂质引入绝缘材料中将杂质置于深度处，使得在所选择的工艺参数下不会发生外扩散，除了使用蚀刻或其它已知工艺已经选择性地减薄了场氧化物。

3. 发明授权

US4003127A Polycrystalline silicon pressure transducer 失效
标题翻译：多晶硅压力传感器
公开(公告)号：US4003127A
公开(公告)日：1977-01-18
申请号：US616959
申请日：1975-09-26
申请人： James M. Jaffe , John Y. W. Seto
发明人： James M. Jaffe , John Y. W. Seto
IPC分类号： G01L9/00 , H01L21/00 , H01L29/84 , B01J17/00
CPC分类号： H01L29/84 , G01L9/0054 , G01L9/0055 , H01L21/00 , Y10T29/49103
摘要： A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.
摘要翻译：一种具有提供极压敏和温度稳定装置的多晶硅隔膜的半导体压力传感器及其制造方法。可以容易地将多晶硅气相沉积在覆盖晶片或基底，优选单晶硅的表面的耐蚀刻层上。多晶硅的这种气相沉积更准确和一致地限定了通过研磨或蚀刻可获得的膜的厚度。形成在隔膜中的压力响应电阻器通过多晶硅的较高电阻率自动电隔离。因此，不需要隔膜上的PN结隔离和钝化氧化物，从而导致温度稳定性的提高。

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