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    • 4. 发明授权
    • Resists formed by vapor deposition of anionically polymerizable monomer
    • 通过阴离子聚合单体的气相沉积形成的抗蚀剂
    • US4675273A
    • 1987-06-23
    • US828107
    • 1986-02-10
    • John G. WoodsJohn M. Rooney
    • John G. WoodsJohn M. Rooney
    • G03F7/004G03F7/16G03F7/40G03C5/00B05D5/12C23C16/00
    • G03F7/167G03F7/004G03F7/40
    • A method for applying a polymeric resist coating of very high molecular weight to a suitable substrate without the necessity of elaborate purification steps and for ensuring adequate coverage of raised regions in three-dimensionally patterned substrates. The method comprises exposing the substrate to be coated to the vapor of an anionically polymerizable monomer of the formula:CHR.dbd.CXYwhere X and Y are strong electron withdrawing groups and R si H or, provided that X and Y are both --CN, C.sub.1 -C.sub.4 alkyl for sufficient time to deposit a polymerizable coating thereon. Particularly preferred monomers are 2-cyanoacrylate esters. The monomer condenses and polymerizes on the surface of the substrate to give a highly uniform high molecular weight polymeric coating which is useful as a resist coating in lithographic processes employing plasma or acid etch techniques.
    • 一种将非常高分子量的聚合物抗蚀剂涂层施加到合适的基底上的方法,而不需要精心的纯化步骤,并且确保在三维图案化的基底中充分覆盖凸起区域。 该方法包括将待涂覆的基底暴露于下式的阴离子可聚合单体的蒸气:CHR = CXY,其中X和Y是强吸电子基团和R si H,或者X和Y都是-CN,C1 -C4烷基,足以在其上沉积可聚合涂层。 特别优选的单体是2-氰基丙烯酸酯。 单体在基材的表面上缩合和聚合,得到高度均匀的高分子量聚合物涂层,其在使用等离子体或酸蚀刻技术的光刻工艺中用作抗蚀剂涂层。
    • 5. 发明授权
    • Imaging method for vapor deposited photoresists of anionically
polymerizable monomer
    • 阴离子聚合单体气相沉积光刻胶成像方法
    • US4675270A
    • 1987-06-23
    • US828109
    • 1986-02-10
    • John G. WoodsJohn M. Rooney
    • John G. WoodsJohn M. Rooney
    • G03F7/004G03F7/16G03F7/40G03C5/00G03C5/04
    • G03F7/40G03F7/004G03F7/167
    • A method for imaging vapor deposited photoresists of cyanoacrylates or related anionically polymerizable monomers without the use of solvent development. This method consists of treating the substrate with a compound which releases acid when exposed to high-energy radiation. In certain cases when the surface of the substrate is slightly acidic or neutral, it is necessary to activate the surface with a basic liquid or vapor which must be chosen so as not to react with the radiation-sensitive acid precursor. The substrate is exposed to actinic or ionizing radiation through a mask or to steered high-energy beams. Finally, the substrate is exposed to a vapor of cyanoacrylate monomer which condenses and polymerizes on the unirradiated regions forming a relief image.
    • 用于成像氰基丙烯酸酯或相关阴离子聚合单体的蒸镀沉积光致抗蚀剂的方法,而不使用溶剂显影。 该方法包括用暴露于高能量辐射时释放酸的化合物处理底物。 在某些情况下,当基质的表面呈酸性或中性时,必须用碱性液体或蒸汽来活化表面,碱性液体或蒸汽必须选择为不与辐射敏感的酸前体反应。 衬底通过掩模暴露于光化或电离辐射,或引导高能束。 最后,将基底暴露于氰基丙烯酸酯单体的蒸汽,其在形成浮雕图像的未照射区域上冷凝和聚合。