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1. 发明申请

US20120220101A1 INTERNAL CONDUCTIVE LAYER 审中-公开
标题翻译：内部导电层
公开(公告)号：US20120220101A1
公开(公告)日：2012-08-30
申请号：US13219668
申请日：2011-08-27
申请人： Ross Teggatz , Wayne Chen , John Krick
发明人： Ross Teggatz , Wayne Chen , John Krick
IPC分类号： H01L21/762
CPC分类号： H01L23/556 , H01L21/187 , H01L21/743 , H01L21/76224 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： The invention provides advances in the arts with useful and novel methods for assembling multi-layer semiconductor structures having one or more internal conductive layers. The disclosed structures provide advantages in terms of resistance to Single Event Effects (SEE) particularly useful in electronics designed for radiation hardness. Disclosed methods include steps for providing two semiconductor layers, each having a conductive surface, and bonding them together with their conductive surfaces adjoining in order to form an internal conductive layer within a completed multi-layer structure. The conductive surfaces may include metals selected for their superior conductivity, refractory metals, selected primarily for their heat-resistance, or conductive dopants. In alternative embodiments, vertical interconnects are also included.
摘要翻译：本发明提供了用于组装具有一个或多个内部导电层的多层半导体结构的有用和新颖的方法的技术进步。所公开的结构在对单一事件效应（SEE）的抵抗性方面提供了特别有用的用于辐射硬度的电子设备。所公开的方法包括提供两个半导体层的步骤，每个半导体层各具有导电表面，并将它们与邻接的导电表面结合在一起，以在完成的多层结构内形成内部导电层。导电表面可以包括为其优异的导电性选择的金属，主要用于其耐热性选择的难熔金属或导电掺杂剂。在替代实施例中，还包括垂直互连。

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