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    • 1. 发明授权
    • Vacuum evaporation and deposition
    • 真空蒸发和沉积
    • US5026454A
    • 1991-06-25
    • US269570
    • 1988-11-10
    • John J. ParmenterRobert B. PhillipsPaul R. Stonestreet
    • John J. ParmenterRobert B. PhillipsPaul R. Stonestreet
    • C23C14/24C23C14/54
    • C23C14/24C23C14/54
    • Method and apparatus for the deposition of material onto a substrate, the method comprising evaporating material from a source, controlling the dosage of material at the substrate by moving a shutter between an open position and a closed position, with a closing step comprising beginning to decelerate said shutter before reaching the closed position, subsequently thereby bringing the shutter substantially to rest at the closed position. Preferably the motion of the shutter is substantially harmonic with the acceleration of the shutter being directed towards, and proportional to the distance of the shutter from, the point mid-way between the open and closed positions. Contamination is reduced from prior methods and the invention is especially advantageous in molecular beam epitaxy.
    • 用于将材料沉积到基底上的方法和装置,所述方法包括从源蒸发材料,通过在打开位置和关闭位置之间移动快门来控制所述基板上的材料的剂量,封闭步骤包括开始减速 所述快门在到达关闭位置之前,随后使快门基本上停在关闭位置。 优选地,快门的运动基本上是谐波的,而快门的加速度被指向并且与打开和关闭位置之间的中点处的快门的距离成比例。 污染从现有方法中减少,本发明在分子束外延中是特别有利的。