专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5242713A Method for conditioning an organic polymeric material 失效
标题翻译：用于调节有机聚合材料的方法
公开(公告)号：US5242713A
公开(公告)日：1993-09-07
申请号：US290486
申请日：1988-12-23
申请人： Alfred Viehbeck , Stephen L. Buchwalter , William A. Donson , John J. Glenning , Martin J. Goldberg , Kurt R. Grebe , Caroline A. Kovac , Linda C. Matthew , Walter P. Pawlowski , Mark J. Schadt , Michael R. Scheuermann , Stephen L. Tisdale
发明人： Alfred Viehbeck , Stephen L. Buchwalter , William A. Donson , John J. Glenning , Martin J. Goldberg , Kurt R. Grebe , Caroline A. Kovac , Linda C. Matthew , Walter P. Pawlowski , Mark J. Schadt , Michael R. Scheuermann , Stephen L. Tisdale
IPC分类号： C23C18/20 , C08J5/12 , C08J7/00 , C23C18/16 , C23C18/28 , H05K3/38
CPC分类号： C23C18/1608 , C23C18/166 , C23C18/2086 , C23C18/28 , C23C18/30 , H05K3/381 , Y10S525/903
摘要： Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

2. 发明授权

US5063951A Fluid treatment device 失效
标题翻译：流体处理装置
公开(公告)号：US5063951A
公开(公告)日：1991-11-12
申请号：US554487
申请日：1990-07-19
申请人： Steven L. Bard , David N. Christensen , John J. Glenning , James A. Nicoletti , Mark W. Urdanick
发明人： Steven L. Bard , David N. Christensen , John J. Glenning , James A. Nicoletti , Mark W. Urdanick
IPC分类号： B05C3/12 , B08B3/04 , C23F1/08 , H05K3/06 , H05K13/00
CPC分类号： C23F1/08 , B08B3/04 , H05K13/0061 , H05K3/068
摘要： A device for applying fluid (e.g., etchant) to a substrate (e.g., thin metallic tape) wherein the device includes a head member having means therein for directing a first fluid (e.g., etchant) at an established first pressure against the substrate and means for directing a second fluid (e.g., air) at an established second pressure equal to or greater than the first pressure (at the location of fluid intersection) and against the substrate in the area proximate the first fluid so as to substantially contain and limit the first fluid to impingement substantially only at the location against which the first fluid is designed to strike. Preferably, two opposing head members are utilized, and these may serve to maintain the substrate therebetween in a suspended state. Both head members are movable relative to each other during fluid application. As stated, the device is particularly suited to function as an etcher, but may also serve other purposes (e.g., coating, cleaning, rinsing, etc.).
摘要翻译：一种用于将液体（例如，蚀刻剂）施加到基底（例如，薄金属带）的装置，其中该装置包括头部构件，该头部构件具有用于将建立的第一压力的第一流体（例如，蚀刻剂）引导到衬底上，用于将第二流体（例如，空气）引导到等于或大于第一压力（在流体相交处的位置处）的建立的第二压力并且靠近第一流体的区域中的基板，以便基本上容纳和限制第一流体基本上仅在第一流体被设计成撞击的位置处冲击。优选地，使用两个相对的头部构件，并且这些头部构件可用于将衬底保持在悬挂状态。两个头部构件在流体施加期间相对于彼此是可移动的。如所述，该装置特别适合用作蚀刻器，但也可用于其它目的（例如，涂覆，清洁，漂洗等）。

3. 发明授权

US4857143A Wet etching of cured polyimide 失效
标题翻译：固化聚酰亚胺的湿蚀刻
公开(公告)号：US4857143A
公开(公告)日：1989-08-15
申请号：US285261
申请日：1988-12-16
申请人： John J. Glenning , Caryn J. Johnson , Walter P. Pawlowski , Kenneth G. Sakorafos
发明人： John J. Glenning , Caryn J. Johnson , Walter P. Pawlowski , Kenneth G. Sakorafos
IPC分类号： G02F1/1337 , C08J7/12 , C08J7/14 , C09K13/02 , C09K13/04 , G03F7/32 , H01L21/311 , H05K1/03 , H05K3/00 , H05K3/40
CPC分类号： C08J7/12 , G03F7/322 , H01L21/31133 , C08J2379/08 , H05K1/0346 , H05K3/0017
摘要： A fully cured or substantially fully cured polyimide is etched by contacting the imide with an aqueous solution of a metal hydroxide such as an alkali metal or alkali earth hydroxide and a metallic compound selected from metal carbonates, sulfates and phosphates. The presence of the carbonate, sulfate or phosphare reduces the undercutting of a resist pattern on the polyimide.

4. 发明授权

US4846929A Wet etching of thermally or chemically cured polyimide 失效
标题翻译：热蚀刻或化学固化的聚酰亚胺的湿蚀刻
公开(公告)号：US4846929A
公开(公告)日：1989-07-11
申请号：US218384
申请日：1988-07-13
申请人： Steven L. Bard , Claudius Feger , John J. Glenning , Gareth G. Hougham , Steven E. Molis , Walter P. Pawlowski , John J. Ritsko , Peter Slota, Jr. , Randy W. Snyder
发明人： Steven L. Bard , Claudius Feger , John J. Glenning , Gareth G. Hougham , Steven E. Molis , Walter P. Pawlowski , John J. Ritsko , Peter Slota, Jr. , Randy W. Snyder
IPC分类号： G03F7/26 , C08J7/12 , G03F7/40 , H01L21/306 , H01L21/311 , H05K1/03 , H05K3/00 , H05K3/10
CPC分类号： C08J7/12 , H01L21/31133 , H05K3/002 , C08J2379/08 , H05K1/0346 , H05K2201/0154 , H05K2203/0793 , H05K3/108
摘要： Polyimide is etched by contacting the polyimide with an aqueous solution of a metal hydroxide followed by contact with an acid followed by contact with an aqueous solution of a metal hydroxide. Etching of chemically cured polyimide can be enhanced by employing a presoaking in hot water. Also, partially etched chemically cured polyimide is removed with a concentrated acid solution.In preparing a metal coated polyimide structure for subsequent gold plating, two flash etching steps with the polyimide etch between are employed after developing the photoresist.

5. 发明授权

US5203955A Method for etching an organic polymeric material 失效
标题翻译：蚀刻有机聚合物材料的方法
公开(公告)号：US5203955A
公开(公告)日：1993-04-20
申请号：US705648
申请日：1991-05-24
申请人： Aldred Viehbeck , Stephen L. Buchwalter , John J. Glenning , Martin J. Goldberg , Caroline A. Kovac , Linda C. Matthew , Walter P. Pawlowski , Stephen L. Tisdale
发明人： Aldred Viehbeck , Stephen L. Buchwalter , John J. Glenning , Martin J. Goldberg , Caroline A. Kovac , Linda C. Matthew , Walter P. Pawlowski , Stephen L. Tisdale
IPC分类号： C23C18/16 , C23C18/28 , H05K3/38
CPC分类号： C23C18/2086 , C23C18/1608 , C23C18/30 , C23C18/36 , C23C18/405 , H05K3/381 , C25D5/022
摘要： Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.
摘要翻译：某些有机聚合材料能够可逆地接受或捐赠来自还原剂的电子。聚合物中的氧化还原位点接受电子，结果发生聚合物的性质变化。该改变可用于改性或蚀刻聚合物材料。可以通过在受控的深度将金属种子并入材料中来修饰材料。种子通过金属阳离子与聚合物中的氧化还原位点的相互作用而引入，这导致阳离子还原形成中性金属种子。随后将含有种子的聚合材料暴露于无电镀浴中，导致具有对聚合物材料具有良好粘附性的所需特性的金属的进一步沉积。聚合物材料的蚀刻可以作为聚合物在非质子传递溶剂中当其氧化还原位点已经接受电子时的溶解度增加的结果进行。增加的溶解度允许在已经还原的聚合物材料的某些区域中蚀刻开口，留下其它区域不变。

6. 发明授权

US5126016A Circuitization of polymeric circuit boards with galvanic removal of chromium adhesion layers 失效
标题翻译：电镀去除铬附着层的聚合物电路板的电路化
公开(公告)号：US5126016A
公开(公告)日：1992-06-30
申请号：US649513
申请日：1991-02-01
申请人： John J. Glenning , Walter P. Pawlowski , Kenneth G. Sakorafos
发明人： John J. Glenning , Walter P. Pawlowski , Kenneth G. Sakorafos
IPC分类号： C23F1/00 , H01L21/48 , H01L23/12 , H05K3/07 , H05K3/10 , H05K3/24 , H05K3/38
CPC分类号： H01L21/4846 , H05K3/07 , H05K3/108 , H05K3/388
摘要： Disclosed is a method of fabricating a microelectronic package, especially a microelectronic package having copper circuitization on a dielectric substrate. The method includes the steps of depositing a chromium adhesion layer on the dielectric substrate, depositing a copper seed layer on the chromium adhesion layer, depositing photoresist on the copper seed layer, imaging and developing the photoresist, and forming a pattern of copper circuitization on the selected portions of the send copper layer. The chromium adhesion layer material is removed from the dielectric substrate by contacting the chromium adhesion layer with aqueous sulfuric acid electrolyte, while maintaining the chromium adhesion layer electrolytically in series with a counterelectrode, and maintaining the chromium adhesion layer anodic with respect to the counterelectrode. The chromium adhesion layer material is oxidized to soluble Cr.sup.+3, while substantially avoiding formation of Cr.sup.+6.
摘要翻译：公开了一种制造微电子封装的方法，特别是在电介质基片上具有铜电路化的微电子封装。该方法包括以下步骤：在电介质基底上沉积铬粘附层，在铬粘合层上沉积铜籽晶层，在铜籽晶层上沉积光致抗蚀剂，成像和显影光致抗蚀剂，并形成铜电路图案发送铜层的选定部分。通过使铬粘附层与硫酸电解质水溶液接触，同时将铬粘合层与对电极串联保持电解，并将铬粘附层保持相对于反电极阳极，从而从电介质基板除去铬粘附层材料。铬粘合层材料被氧化成可溶的Cr + 3，同时基本上避免形成Cr + 6。

7. 发明授权

US4883744A Forming a polymide pattern on a substrate 失效
标题翻译：在基材上形成聚酰亚胺图案
公开(公告)号：US4883744A
公开(公告)日：1989-11-28
申请号：US196641
申请日：1988-05-17
申请人： Natalie B. Feilchenfeld , Stephen J. Fuerniss , John J. Glenning , Walter P. Pawlowski , Giana M. Phelan , Paul G. Rickerl
发明人： Natalie B. Feilchenfeld , Stephen J. Fuerniss , John J. Glenning , Walter P. Pawlowski , Giana M. Phelan , Paul G. Rickerl
IPC分类号： H05K3/06 , G03F7/038 , G03F7/16 , G03F7/32 , H01L21/768 , H01L23/522 , H05K1/03 , H05K3/46
CPC分类号： G03F7/0387 , G03F7/168 , G03F7/32
摘要： A polyimide pattern is formed on a substrate by providing a layer of photosensitive polyimide precursor containing the polyimide precursor and a compound having a photosensitive group on the substrate and prebaking the layer. The layer is then exposed imagewise to actinic radiation through a photomask to form an exposed image pattern of the polyimide precursor in the layer. The unexposed areas of the layer are removed using a liquid developer and the exposed image pattern is cured by heating. In one aspect of the present invention, the prebaking step employs a judicious selection of times and temperature to eliminate the problem of formation of a white residue that occurs from using prior art prebake procedures. In another aspect of the present invention, a particular liquid developer composition is employed to facilitate the formation of sloped vias in the polyimide. In another aspect of the present invention, a particular range of exposure wavelength(s) is employed to obtain smooth walled vias.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式