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    • 5. 发明授权
    • Gallium arsenide crystal growth
    • 砷化镓晶体生长
    • US4840699A
    • 1989-06-20
    • US142310
    • 1987-12-28
    • Chandra P. KhattakVernon E. WhiteFrederick SchmidJohn H. Wohlgemuth
    • Chandra P. KhattakVernon E. WhiteFrederick SchmidJohn H. Wohlgemuth
    • C30B11/00
    • C30B11/00C30B29/42Y10S117/90Y10S117/902
    • A process that, without doping of PBN crucibles, produces semi-insulating GaAs having low, or essentially no, dislocation density; and in which the crystal may be in situ annealed after growth. The process is a variant of the Heat Exchanger Method (HEM) disclosed in U.S. Pat. No. 3,898,051. Crack-free, semi-insulating GaAs crystals having low dislocation density are grown from presynthesized undoped GaAs meltstock in sealed quartz (vitreous silica) crucibles, without the need for an encapsulant. One aspect of the invention features seeded growth of orientation crystals having a dislocation density 1-2 orders of magnitude less than that of the seed; in another aspect, crystals having fewer than 500 dislocations/cam.sup.2 in their center column are grown without a seed.
    • 在不掺杂PBN坩埚的情况下,产生具有低或基本上没有位错密度的半绝缘GaAs的工艺; 并且其中晶体可以在生长后原位退火。 该方法是在美国专利No.4,623,597中公开的热交换器方法(HEM)的变型。 3,898,051。 具有低位错密度的无裂纹的半绝缘GaAs晶体从密封的石英(玻璃状二氧化硅)坩埚中的预合成的未掺杂的GaAs熔体体生长,而不需要密封剂。 本发明的一个方面特征在于具有位错密度比种子小1-2个数量级的<100>取向晶体的种子生长; 在另一方面,在其中心柱中具有少于500个位错/ cam2的晶体生长而没有种子。