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    • 6. 发明授权
    • Internal voltage reference for memory interface
    • 存储器接口的内部参考电压
    • US07095245B2
    • 2006-08-22
    • US10714075
    • 2003-11-14
    • John F. ZumkehrJames E. ChandlerRay I. Chiang
    • John F. ZumkehrJames E. ChandlerRay I. Chiang
    • H03K19/00
    • G11C5/147G11C2207/2254
    • Embodiments of the invention include a memory controller to interface to memory. In one embodiment, the memory controller includes a pull-up calibration terminal to couple to an external pull-up resistor, a pull-down calibration terminal to couple to an external pull-down resistor, a voltage reference node, a first switch coupled between the pull-up calibration terminal and the voltage reference node, and a second switch coupled between the pull-down calibration terminal and the voltage reference node. The first switch and the second switch may be selectively closed to generate an internal voltage reference on the voltage reference node in a normal mode that may be used for comparison with an input signal to receive data.
    • 本发明的实施例包括与存储器接口的存储器控​​制器。 在一个实施例中,存储器控制器包括耦合到外部上拉电阻器的上拉校准端子,耦合到外部下拉电阻器的下拉校准端子,电压参考节点,耦合在 上拉校准端子和电压参考节点,以及耦合在下拉校准端子和电压参考节点之间的第二开关。 可以选择性地关闭第一开关和第二开关以在正常模式下在电压参考节点上产生内部参考电压,该正常模式可用于与输入信号进行比较以接收数据。