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    • 3. 发明授权
    • Method and device for plasma-treating the surface of substrates by ion bombardment
    • 通过离子轰击等离子体处理衬底表面的方法和装置
    • US07165506B2
    • 2007-01-23
    • US10204618
    • 2001-02-26
    • Johannes Stollenwerk
    • Johannes Stollenwerk
    • H01L21/00
    • H01J37/32055H01J37/3266H05H1/48H05H2001/3426
    • In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the electric arc, and the ions of the etching gas are accelerated onto the substrate by an electric potential. The employed device has a vacuum chamber, an etching gas supply, and first and second electrodes supplied with direct or alternating voltage for generating the electric arc that produces the plasma of the etching gas. The first electrode is ring-shaped and the second electrode is arranged centrally to the ring of the first electrode. A magnetic coil creates a migrating magnetic field such that the electric arc is locally separated from the substrate and circulates about the substrate in a carousel fashion.
    • 在用于降低基板厚度的离子蚀刻方法中,在真空室中产生电弧,使得电弧与基板局部分离并在基板周围循环。 通过电弧产生供给的蚀刻气体的等离子体,蚀刻气体的离子通过电位被加速到基板上。 所采用的装置具有真空室,蚀刻气体源,以及供给直接或交流电压的第一和第二电极,用于产生产生蚀刻气体的等离子体的电弧。 第一电极是环形的,第二电极布置在第一电极的环的中心。 电磁线圈产生迁移磁场,使得电弧与衬底局部分离,并以转盘方式围绕衬底循环。