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1. 发明授权

US6040245A IC mechanical planarization process incorporating two slurry compositions for faster material removal times 有权
标题翻译：结合两种浆料组合物的IC机械平面化工艺，用于更快的材料去除时间
公开(公告)号：US6040245A
公开(公告)日：2000-03-21
申请号：US310506
申请日：1999-05-12
申请人： Gurtej S. Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
发明人： Gurtej S. Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
IPC分类号： B24B37/04 , B24B57/02 , H01L21/3105 , H01L21/321 , H01L21/304
CPC分类号： H01L21/31053 , B24B37/042 , B24B57/02 , H01L21/3212
摘要： The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a CMP process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the CMP process utilizes a system of closely regulating the timing of the two chemical processes. Specifically, during a first time period, both chemicals are applied; thus providing a given speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, so as to slow down the chemical action and facilitate a greater degree of planarization.
摘要翻译：本发明涉及集成电路（IC）的制造。特别是，CMP工艺中含有少量两种化学物质。第一种化学品是混合成浆料的标准浆料混合物，如水，氧化铝和过氧化氢。第二种化学品是强碱性化学品，如KOH或氢氧化钾。此外，CMP工艺利用了一个紧密调节两个化学工艺时序的系统。具体来说，在第一时间段内应用两种化学品; 从而提供钨材料的化学去除的给定速度。在第二时间段期间，去除KOH，以减缓化学作用并促进更大程度的平坦化。

2. 发明授权

US5994224A IC mechanical planarization process incorporating two slurry compositions for faster material removal times 失效
标题翻译：结合两种浆料组合物的IC机械平面化工艺，用于更快的材料去除时间
公开(公告)号：US5994224A
公开(公告)日：1999-11-30
申请号：US992399
申请日：1997-12-17
申请人： Gurtej S. Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
发明人： Gurtej S. Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
IPC分类号： B24B37/04 , B24B57/02 , H01L21/3105 , H01L21/321 , H01L21/304
CPC分类号： H01L21/31053 , B24B37/042 , B24B57/02 , H01L21/3212
摘要： The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.
摘要翻译：本发明涉及集成电路（IC）制造。特别地，有一个cmp工艺，其中加入少量两种化学品。第一种化学品是混合成浆料的标准浆料混合物，如水，氧化铝和过氧化氢。第二种化学品是强碱性化学品，如KOH或氢氧化钾。此外，cmp工艺利用了一个紧密调节两个化学过程时序的系统。具体来说，在第一时间段内应用两种化学品; 从而提高钨材料的化学去除速度。在第二时间段期间，KOH被去除，从而减缓化学作用，并且重要地实现比两个化学品第一时间段能够更大程度的平整度。

3. 发明授权

US5540810A IC mechanical planarization process incorporating two slurry compositions for faster material removal times 失效
公开(公告)号：US5540810A
公开(公告)日：1996-07-30
申请号：US493205
申请日：1995-06-20
申请人： Gurtej Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
发明人： Gurtej Sandhu , Richard L. Elliott , Trung T. Doan , Jody D. Larsen
IPC分类号： B24B37/04 , B24B57/02 , H01L21/3105 , H01L21/321 , H01L21/00 , B24B1/00
CPC分类号： H01L21/31053 , B24B37/042 , B24B57/02 , H01L21/3212
摘要： The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.

4. 发明授权

US06251789B1 Selective slurries for the formation of conductive structures 有权
标题翻译：用于形成导电结构的选择性浆料
公开(公告)号：US06251789B1
公开(公告)日：2001-06-26
申请号：US09464156
申请日：1999-12-16
申请人： Arthur M. Wilson , Jody D. larsen
发明人： Arthur M. Wilson , Jody D. larsen
IPC分类号： H01L21302
CPC分类号： H01L21/7684 , H01L21/3212
摘要： An embodiment of the instant invention is a method of fabricating a semiconductor device with a patterned dielectric layer having an upper surface and an opening with a bottom and sidewalls formed over a semiconductor substrate, the method comprising the steps of: forming a liner layer (layer 434 of FIGS. 1b-1d) on the upper surface of the patterned dielectric layer and on the bottom and the sidewalls of the opening in the patterned dielectric layer; forming a conductive layer (layer 436 of FIGS. 1b-1d) on the liner layer; removing the portion of the conductive layer which overlies the top surface of the dielectric layer thereby exposing a portion of the liner layer while leaving the portion of the conductive layer situated in the opening of the dielectric layer substantially unremoved, the step of removing the portion of the conductive layer is accomplished by chemical mechanical polishing using a first slurry; removing the exposed portion of the liner layer while leaving the unexposed portion of the liner layer substantially unremoved by chemical mechanical polishing using a second slurry; and wherein the first slurry removes the conductive layer much more readily than the liner layer and the second slurry removes the liner layer more readily than the conductive layer.
摘要翻译：本发明的一个实施例是制造半导体器件的方法，该半导体器件具有图案化的介电层，其具有上表面和开口，底部和侧壁形成在半导体衬底上，该方法包括以下步骤：形成衬层（层在图案化的介电层的上表面上，并且在图案化的介电层中的开口的底部和侧壁上，在衬层上形成导电层（图1b-1d的层436）; 去除覆盖在电介质层的顶表面上的导电层的部分，从而暴露衬里层的一部分，同时使位于介质层的开口中的导电层的部分基本上不被移除，除去部分导电层通过使用第一浆料的化学机械抛光来实现; 在通过使用第二浆料的化学机械抛光使衬里层的未曝光部分基本上不被除去时，去除衬里层的暴露部分; 并且其中所述第一浆料比所述衬里层更容易地除去所述导电层，并且所述第二浆料比所述导电层更容易地除去所述衬里层。

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