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    • 2. 发明授权
    • Method for production of a thermoelectric apparatus
    • 热电装置的制造方法
    • US08709850B2
    • 2014-04-29
    • US13000576
    • 2009-06-23
    • Joachim NurnusFritz VolkertAxel Schubert
    • Joachim NurnusFritz VolkertAxel Schubert
    • H01L21/02
    • H01L35/34H01L27/16
    • The invention relates to a method for production of at least one thermoelectric apparatus with the steps of: preparation of a first wafer (1) which is formed from a thermoelectric material of a first conductivity type; preparation of a second wafer which is formed from a thermoelectric material of a second conductivity type; structuring of the first wafer (1) so that a group of first thermoelectric structures (7) is produced; structuring of the second wafer so that a group of second thermoelectric structures is produced; and linking of the first to the second wafer in such a manner that the first and the second thermoelectric structures are electrically connected together and thus form the thermoelectric apparatus. According to the invention, before the structuring of the first wafer (1), a first contact material (3) is deposited on the first wafer (1) and/or before the structuring of the second wafer, a second contact material is deposited onto the second wafer.
    • 本发明涉及一种生产至少一种热电装置的方法,其步骤为:制备由第一导电类型的热电材料形成的第一晶片(1); 制备由第二导电类型的热电材料形成的第二晶片; 构造第一晶片(1),从而产生一组第一热电结构(7); 构造第二晶片,从而产生一组第二热电结构; 以及第一和第二晶片的连接,使得第一和第二热电结构电连接在一起,从而形成热电装置。 根据本发明,在构造第一晶片(1)之前,第一接触材料(3)沉积在第一晶片(1)上和/或第二晶片的结构之前,将第二接触材料沉积到 第二个晶圆。
    • 3. 发明申请
    • METHOD FOR PRODUCTION OF A THERMOELECTRIC APPARATUS
    • 制造热电装置的方法
    • US20110111546A1
    • 2011-05-12
    • US13000576
    • 2009-06-23
    • Joachim NURNUSFritz VOLKERTAxel SCHUBERT
    • Joachim NURNUSFritz VOLKERTAxel SCHUBERT
    • H01L21/02
    • H01L35/34H01L27/16
    • The invention relates to a method for production of at least one thermoelectric apparatus with the steps of:preparation of a first wafer (1) which is formed from a thermoelectric material of a first conductivity type;preparation of a second wafer which is formed from a thermoelectric material of a second conductivity type;structuring of the first wafer (1) so that a group of first thermoelectric structures (7) is produced;structuring of the second wafer so that a group of second thermoelectric structures is produced;linking of the first to the second wafer in such a manner that the first and the second thermoelectric structures are electrically connected together and thus form the thermoelectric apparatus.According to the invention, before the structuring of the first wafer (1), a first contact material (3) is deposited on the first wafer (1) and/or before the structuring of the second wafer, a second contact material is deposited onto the second wafer.
    • 本发明涉及一种生产至少一种热电装置的方法,其步骤为:制备由第一导电类型的热电材料形成的第一晶片(1); 制备由第二导电类型的热电材料形成的第二晶片; 构造第一晶片(1),从而产生一组第一热电结构(7); 构造第二晶片,从而产生一组第二热电结构; 以第一和第二热电结构电连接在一起并由此形成热电装置的方式连接第一和第二晶片。 根据本发明,在构造第一晶片(1)之前,第一接触材料(3)沉积在第一晶片(1)上和/或第二晶片的结构之前,将第二接触材料沉积到 第二个晶圆。